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www.irf.com
1
3/1/04
IRF6602/IRF6602TR1
HEXFET
Power MOSFET
Notes
through
are on page 11
V
DSS
R
DS(on)
max
Qg
20V
13m
@V
GS
= 10V
12nC
19m
@V
GS
= 4.5V
DirectFET
ISOMETRIC
Description
The IRF6602 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to
achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm profile.
The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment
and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the
manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in
power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6602 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the
latest generation of processors operating at higher frequencies. The IRF6602 has been optimized for parameters that are
critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket.
l
Application Specific MOSFETs
l
Ideal for CPU Core DC-DC Converters
l
Low Conduction Losses
l
Low Switching Losses
l
Low Profile (<0.7 mm)
l
Dual Sided Cooling Compatible
l
Compatible with existing Surface Mount Techniques
Absolute Maximum Ratings
Parameter
Units
V
DS
Drain-to-Source Voltage
V
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
c
P
D
@T
A
= 25C
Power Dissipation
g
W
P
D
@T
A
= 70C
Power Dissipation
g
P
D
@T
C
= 25C
Power Dissipation
Linear Derating Factor
W/C
T
J
Operating Junction and
C
T
STG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
R
JA
Junction-to-Ambient
f
55
R
JA
Junction-to-Ambient
g
12.5
R
JA
Junction-to-Ambient
h
20
C/W
R
JC
Junction-to-Case
i
3.0
R
J-PCB
Junction-to-PCB Mounted
1.0
Max.
11
8.9
89
20
20
48
-40 to + 150
2.3
0.018
1.5
42
Applicable DirectFET Package/Layout Pad (see p.9, 10 for details)
MQ
SQ
SX
ST
MQ
MX
MT
PD-94363C
IRF6602/IRF6602TR1
2
www.irf.com
S
D
G
Static @ T
J
= 25C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage
20
V
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
22
mV/C
R
DS(on)
Static Drain-to-Source On-Resistance
10
13
m
14
19
V
GS(th)
Gate Threshold Voltage
1.0
2.0
2.3
V
V
GS(th)
Gate Threshold Voltage Coefficient
-4.4
mV/C
100
I
DSS
Drain-to-Source Leakage Current
20
A
125
I
GSS
Gate-to-Source Forward Leakage
200
nA
Gate-to-Source Reverse Leakage
-200
gfs
Forward Transconductance
20
S
Q
g
Total Gate Charge
12
18
Q
gs1
Pre-Vth Gate-to-Source Charge
3.5
Q
gs2
Post-Vth Gate-to-Source Charge
1.3
nC
Q
gd
Gate-to-Drain Charge
4.2
Q
godr
Gate Charge Overdrive
3.0
See Fig. 16
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
5.5
Q
oss
Output Charge
19
nC
R
G
Gate Resistance
2.8
4.2
t
d(on)
Turn-On Delay Time
33
t
r
Rise Time
6.0
t
d(off)
Turn-Off Delay Time
14
ns
t
f
Fall Time
12
C
iss
Input Capacitance
1420
C
oss
Output Capacitance
960
pF
C
rss
Reverse Transfer Capacitance
100
Avalanche Characteristics
Parameter
Units
E
AS
Single Pulse Avalanche Energy
d
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
I
S
Continuous Source Current
48
(Body Diode)
A
I
SM
Pulsed Source Current
380
(Body Diode)
V
SD
Diode Forward Voltage
0.83
1.2
V
t
rr
Reverse Recovery Time
42
62
ns
Q
rr
Reverse Recovery Charge
51
77
nC
V
GS
= 4.5V
Typ.
I
D
= 8.8A
V
GS
= 0V
V
DS
= 10V
I
D
= 8.8A
97
T
J
= 25C, I
F
= 8.8A
di/dt = 100A/s
e
T
J
= 25C, I
S
= 8.8A, V
GS
= 0V
e
showing the
integral reverse
p-n junction diode.
8.8
MOSFET symbol
Conditions
V
DS
= 16V, V
GS
= 0V, T
J
= 125C
V
DS
= 10V
Conditions
V
GS
= 0V, I
D
= 250A
Reference to 25C, I
D
= 1mA
V
GS
= 10V, I
D
= 11A
e
V
DS
= 20V, V
GS
= 0V
V
GS
= 4.5V, I
D
= 8.8A
e
V
DS
= V
GS
, I
D
= 250A
V
DS
= 16V, V
GS
= 0V
V
GS
= 20V
V
GS
= -20V
4.2
= 1.0MHz
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
e
Max.
Clamped Inductive Load
V
DS
= 10V, I
D
= 8.8A
IRF6602/IRF6602TR1
www.irf.com
3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
-60
-40
-20
0
20
40
60
80
100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature
( C)
R
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
On
R
e
s
i
s
t
a
n
c
e
(
N
or
m
a
l
i
z
ed)
J
DS
(
o
n
)
V
=
I
=
GS
D
10V
11A
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
2.7V
20s PULSE WIDTH
Tj = 25C
VGS
TOP 10V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
2.7V
20s PULSE WIDTH
Tj = 150C
VGS
TOP 10V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS, Gate-to-Source Voltage (V)
1.00
10.00
100.00
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
)
TJ = 25C
TJ = 150C
VDS = 15V
20s PULSE WIDTH
IRF6602/IRF6602TR1
4
www.irf.com
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating
Area
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V ,Source-to-Drain Voltage (V)
I
,
R
e
v
e
rs
e D
r
ain C
u
rrent
(A)
SD
SD
V = 0 V
GS
T = 150 C
J
T = 25 C
J
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
1
10
100
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25C
Tj = 150C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100sec
0
5
10
15
QG Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
VDS= 16V
VDS= 10V
ID= 8.8A
IRF6602/IRF6602TR1
www.irf.com
5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Fig 10. Threshold Voltage Vs. Temperature
25
50
75
100
125
150
0
3
6
9
12
I
,
D
r
ai
n C
u
r
r
ent
(
A
)
D
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D =
t / t
2. Peak T
= P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
her
mal
R
e
s
pons
e
(
Z
)
1
th
JA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
-75
-50
-25
0
25
50
75
100 125 150
TJ , Temperature ( C )
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
ID = 250A
T
A
, Ambient Temperature (C)
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