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IRF6215S/L
HEXFET
Power MOSFET
PD - 91643
l
Advanced Process Technology
l
Surface Mount (IRF6215S)
l
Low-profile through-hole (IRF6215L)
l
175C Operating Temperature
l
Fast Switching
l
P-Channel
l
Fully Avalanche Rated
5/13/98
S
D
G
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
1.4
R
JA
Junction-to-Ambient ( PCB Mounted,steady-state)**
40
Thermal Resistance
C/W
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ -10V
-13
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ -10V
-9.0
A
I
DM
Pulsed Drain Current
-44
P
D
@T
A
= 25C
Power Dissipation
3.8
W
P
D
@T
C
= 25C
Power Dissipation
110
W
Linear Derating Factor
0.71
W/C
V
GS
Gate-to-Source Voltage
20
V
E
AS
Single Pulse Avalanche Energy
310
mJ
I
AR
Avalanche Current
-6.6
A
E
AR
Repetitive Avalanche Energy
11
mJ
dv/dt
Peak Diode Recovery dv/dt
-5.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF6215L) is available for low-
profile applications.
Description
V
DSS
= -150V
R
DS(on)
= 0.29
I
D
= -13A
2
D P ak
T O -26 2
IRF6215S/L
Starting T
J
= 25C, L = 14mH
R
G
= 25
, I
AS
= -6.6A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
I
SD
-6.6A, di/dt
-620A/s, V
DD
V
(BR)DSS
,
T
J
175C
Pulse width
300s; duty cycle
2%.
Uses IRF6215 data and test conditions
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
-1.6
V
T
J
= 25C, I
S
= -6.6A, V
GS
= 0V
t
rr
Reverse Recovery Time
160
240
ns
T
J
= 25C, I
F
= -6.6A
Q
rr
Reverse Recovery Charge
1.2
1.7
C
di/dt = -100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
A
S
D
G
-11
-44
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-150
V
V
GS
= 0V, I
D
= -250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
-0.20
V/C
Reference to 25C, I
D
= -1mA
0.29
V
GS
= -10V, I
D
= -6.6A
0.58
V
GS
= -10V, I
D
= -6.6A
T
J
= 150C
V
GS(th)
Gate Threshold Voltage
-2.0
-4.0
V
V
DS
= V
GS
, I
D
= -250A
g
fs
Forward Transconductance
3.6
S
V
DS
= -25V, I
D
= -6.6A
-25
A
V
DS
= 150V, V
GS
= 0V
-250
V
DS
= 120V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
V
GS
= -20V
Gate-to-Source Reverse Leakage
-100
n A
V
GS
= 20V
Q
g
Total Gate Charge
66
I
D
= -6.6A
Q
gs
Gate-to-Source Charge
8.1
nC
V
DS
= -120V
Q
gd
Gate-to-Drain ("Miller") Charge
35
V
GS
= -10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
14
V
DD
= -75V
t
r
Rise Time
36
I
D
= -6.6A
t
d(off)
Turn-Off Delay Time
53
R
G
= 6.8
t
f
Fall Time
37
R
D
= 12
,
See Fig. 10
Between lead,
and center of die contact
C
iss
Input Capacitance
860
V
GS
= 0V
C
oss
Output Capacitance
220
pF
V
DS
= -25V
C
rss
Reverse Transfer Capacitance
130
= 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
R
DS(on)
Static Drain-to-Source On-Resistance
I
GSS
I
DSS
Drain-to-Source Leakage Current
L
S
Internal Source Inductance
7.5
nH
IRF6215S/L
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
1 0
1 0 0
1
1 0
1 0 0
D
D S
2 0 s P U LS E W ID T H
T = 2 5C
c
A
-I
,
D
r
a
i
n
-
t
o
-S
o
u
rc
e
C
u
rre
n
t
(A
)
-V , D rain-to-S ourc e V olta ge (V )
VGS
TO P - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOT TOM - 4.5V
-4 .5V
1
1 0
1 0 0
1
1 0
1 0 0
D
D S
A
-
I
,
Dr
ai
n
-
t
o
-
S
ou
r
c
e Cur
r
e
n
t
(
A
)
-V , D rain-to-S ource V oltage (V )
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4 .5V
2 0 s P U LS E W ID T H
T = 1 75 C
C
1
1 0
1 0 0
4
5
6
7
8
9
1 0
T = 25 C
J
G S
D
A
-I
,
D
r
a
i
n
-
t
o
-S
o
u
rc
e
C
u
rre
n
t
(A
)
-V , Ga te -to-S ource V olta ge (V )
T = 1 7 5 C
J
V = -5 0 V
2 0 s P U L S E W ID TH
DS
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
2 . 5
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
J
T , J unc tion T em perature (C )
R
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
D
S
(
on)
(N
o
r
m
a
li
z
e
d
)
A
V = -10 V
G S
I = -1 1A
D
T
J
= 25C
T
J
= 175C
IRF6215S/L
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
4
8
1 2
1 6
2 0
0
2 0
4 0
6 0
8 0
G
GS
A
-
V
, G
a
te
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
Q , Total G ate C harge (nC )
F O R T E S T C IR C U IT
S E E F IG U R E 1 3
I = -6 .6 A
V = -12 0V
V = -75 V
V = -30 V
D
D S
D S
D S
0 . 1
1
1 0
1 0 0
0 . 2
0 . 6
1 . 0
1 . 4
1 . 8
T = 25 C
J
V = 0V
G S
S D
SD
A
-
I
,
Rev
er
s
e
D
r
a
i
n Cur
r
e
n
t
(
A
)
-V , S ourc e-to-D ra in V olta ge (V )
T = 17 5 C
J
1
1 0
1 0 0
1
1 0
1 0 0
1 0 0 0
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R
D S (o n)
1 0 m s
A
-I
,
D
r
a
i
n
C
u
rre
n
t
(A
)
-V , D ra in -to -S o urc e V o lta g e (V )
D S
D
1 0 s
1 0 0 s
1 m s
T = 25 C
T = 17 5C
S ing le P u ls e
C
J
0
4 0 0
8 0 0
1 2 0 0
1 6 0 0
2 0 0 0
1
1 0
1 0 0
C
,
Cap
ac
i
t
a
n
c
e
(
p
F
)
A
D S
-V , D rain-to-S o urc e V oltage (V )
V = 0V , f = 1M H z
C = C + C , C S H O R T E D
C = C
C = C + C
G S
is s g s g d d s
rs s g d
o ss d s gd
C
is s
C
os s
C
rs s
T
C
= 25C
IRF6215S/L
25
50
75
100
125
150
175
0
3
6
9
12
15
T , Case Temperature ( C)
-I , Drain Current (A)
C
D
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
V
DS
-10V
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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