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HEXFET
Power MOSFET
PD - 93943
IRF6150
Parameter
Max.
Units
V
SS
Source- Source Voltage
-20
V
I
S
@ T
C
= 25C
Continuous Current, V
GS1
= V
GS2
= -4.5V
7.9
I
S
@ T
C
= 70C
Continuous Current, V
GS1
= V
GS2
= -4.5V
6.3
A
I
SM
Pulsed Current
40
P
D
@T
C
= 25C
Power Dissipation
3.0
P
D
@T
C
= 70C
Power Dissipation
1.9
Linear Derating Factor
24
mW/C
V
GS
Gate-to-Source Voltage
12
V
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
C
Absolute Maximum Ratings
W
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1
True chip-scale packaging is available from International
Rectifier. Through the use of advanced processing tech-
niques and a unique packaging concept, extremely low
on-resistance and the highest power densities in the
industry have been made available for battery and load
management applications. These benefits, combined with
the ruggedized device design that International Rectifier
is well known for,
provides the designer with an ex-
tremely efficient and reliable device.
The
FlipFET package, is one-third the footprint of a
comparable SO-8 package and has a profile of less than
.8mm. Combined with the low thermal resistance of the
die level device, this makes the
FlipFET the best device
for applications where printed circuit board space is at a
premium and in extremely thin application environments
such as battery packs, cell phones and PCMCIA cards.
Description
l
Ultra Low
R
SS(on)
per Footprint Area
l
Low
Thermal Resistance
l
Bi-Directional P-Channel Switch
l
Super Low Profile (<.8mm)
l
Available Tested on Tape & Reel
Symbol
Parameter
Typ.
Max.
Units
R
JA
Junction-to-Ambient
42
C/W
R
J-PCB
Junction-to-PCB mounted
17
Thermal Resistance
07/26/04
V
SS
R
SS(on)
max
I
S
-20V
0.036
@V
GS1,2
= -4.5V -7.9A
0.052
@V
GS1,2
= -2.5V -6.3A
6
*
6
*
OBSOLETE
IRF6150
2
www.irf.com
OBSOLETE
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)SSS
Source-to-Source Breakdown Voltage
-20
V
V
GS
= 0V, I
D
= -250A
V
(BR)SSS
/
T
J
Breakdown Voltage Temp. Coefficient
-TBD
V/C Reference to 25C, I
D
= -1mA
0.036
V
GS1
= V
GS2
= -4.5V, I
S
= -7.9A
0.052
V
GS1
= V
GS2
= -2.5V, I
S
= -6.3A
V
GS(th)
Gate Threshold Voltage
-0.45 -1.2
V
V
SS
= V
GS
, I
S
= -250A
g
fs
Forward Transconductance
TBD
S
V
SS
= -10V, I
S
= -7.9A
-1.0
A
V
SS
= -20V, V
GS
= 0V
-25
V
SS
= -16V, V
GS
= 0V, T
J
= 125C
Gate-to-Source Forward Leakage
100
V
GS
= 12V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -12V
Q
g
Total Gate Charge
TBD TBD
I
S
= -TBDA
Q
gs
Gate-to-Source Charge
TBD TBD
nC
V
SS
= -16V
Q
G1-S2
Miller Charge
TBD TBD
V
GS
= -5.0V
t
d(on)
Turn-On Delay Time
TBD
V
SS
= -10V
t
r
Rise Time
TBD
I
S
= -1.0A
t
d(off)
Turn-Off Delay Time
TBD
R
G
= 6.0
t
f
Fall Time
TBD
V
GS
= -5.0V
C
iss
Input Capacitance
TBD
V
GS
= 0V
C
oss
Output Capacitance
TBD
pF
V
SS
= -15V
C
rss
Reverse Transfer Capacitance
TBD
= 1.0MHz
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width
400s; duty cycle 2%. Gate voltage applied to both gates.
When mounted on 1 inch square 2oz copper on FR-4
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
GSS
R
SS(on)
Static Source-to-Source On-Resistance
I
SSS
Zero Gate Voltage Source Current
ns
IRF6150
www.irf.com
3
OBSOLETE
Bi-Directional MOSFET Outline Dimension
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Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/04
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