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Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 10V, TC = 25C
Continuous Drain Current
18*
ID @ VGS = 10V, TC = 100C Continuous Drain Current
18*
IDM
Pulsed Drain Current
72
PD @ TC = 25C
Max. Power Dissipation
100
W
Linear Derating Factor
0.8
W/C
VGS
Gate-to-Source Voltage
20
V
EAS
Single Pulse Avalanche Energy
210
mJ
IAR
Avalanche Current
18
A
EAR
Repetitive Avalanche Energy
10
mJ
dv/dt
Peak Diode Recovery dv/dt
3.8
V/ns
T J
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.063in./1.6mm from case for 10sec)
Weight
4.3 (Typical)
g
o
C
A
01/17/01
www.irf.com
1
Product Summary
Part Number
BVDSS
R
DS(on)
I
D
IRF5Y1310CM
100V
0.044
18A*
For footnotes refer to the last page
TO-257AA
HEXFET
POWER MOSFET
IRF5Y1310CM
THRU-HOLE (TO-257AA)
100V, N-CHANNEL
Fifth Generation HEXFET
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
* Current is limited by package
Features:
n
Low R
DS(on)
n
Avalanche Energy Ratings
n
Dynamic dv/dt Rating
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Light Weight
PD - 94058
IRF5Y1310CM
2
www.irf.com
Electrical Characteristics
@ Tj = 25C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
100
--
--
V
VGS = 0V, ID = 250
A
BVDSS/
TJ Temperature Coefficient of Breakdown
--
0.114
--
V/C
Reference to 25C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
--
--
0.044
VGS = 10V, ID = 18A
Resistance
VGS(th)
Gate Threshold Voltage
2.0
--
4.0
V
VDS = VGS, ID = 250
A
gfs
Forward Transconductance
14
--
--
S (
)
VDS = 25V, IDS = 18A
IDSS
Zero Gate Voltage Drain Current
--
--
25
VDS = 100V ,VGS=0V
--
--
250
VDS = 80V,
VGS = 0V, TJ =125C
IGSS
Gate-to-Source Leakage Forward
--
--
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
--
--
-100
VGS = -20V
Qg
Total Gate Charge
--
--
110
VGS =10V, ID = 18A
Qgs
Gate-to-Source Charge
--
--
15
nC
VDS = 80V
Qgd
Gate-to-Drain (`Miller') Charge
--
--
58
td
(on)
Turn-On Delay Time
--
--
19
VDD = 50V, ID = 18A,
tr
Rise Time
--
--
85
VGS =10V, RG = 3.6
td
(off)
Turn-Off Delay Time
--
--
65
tf
Fall Time
--
--
54
LS + LD
Total Inductance
--
6.8
--
Ciss
Input Capacitance
--
1872
--
VGS = 0V, VDS = 25V
Coss
Output Capacitance
--
463
--
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
--
234
--
nA
nH
ns
A
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
--
--
1.25
C/W
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
--
--
18*
ISM
Pulse Source Current (Body Diode)
--
--
72
VSD
Diode Forward Voltage
--
--
1.3
V
T
j
= 25C, IS = 18A, VGS = 0V
trr
Reverse Recovery Time
--
--
270
ns
Tj = 25C, IF = 18A, di/dt
100A/
s
QRR Reverse Recovery Charge
--
--
1.8
C
VDD
30V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
* Current is limited by package
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3
IRF5Y1310CM
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
15
1
10
100
4.0
5.0
6.0
7.0
8.0
9.0
V = 50V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 150 C
J
T = 25 C
J
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
10V
18A
1
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 150 C
J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
IRF5Y1310CM
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
0
500
1000
1500
2000
2500
3000
3500
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
C
iss
C
oss
C
rss
0
20
40
60
80
100
120
140
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
18A
V
= 20V
DS
V
= 50V
DS
V
= 80V
DS
0.1
1
10
100
0.2
0.6
1.0
1.4
1.8
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 150 C
J
1
10
100
1000
VDS , Drain-toSource Voltage (V)
1
10
100
1000
I D
, Drain-to-Source Current (A)
Tc = 25C
Tj = 150C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY RDS(on)
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5
IRF5Y1310CM
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
+
-
V
DD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
25
50
75
100
125
150
0
5
10
15
20
25
30
35
T , Case Temperature ( C)
I , Drain Current (A)
C
D
LIMITED BY PACKAGE
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
V
GS
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