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Max.
N-Channel
P-Channel
V
DS
Drain-to-Source Voltage
20
-20
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ 10V
2.7
-2.2
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ 10V
2.2
-1.7
I
DM
Pulsed Drain Current
11
-9.0
P
D
@T
A
= 25C
Power Dissipation
0.96
W
P
D
@T
A
= 70C
Power Dissipation
0.62
Linear Derating Factor
7.7
mW/C
V
GS
Gate-to-Source Voltage
12
V
T
J,
T
STG
Junction and Storage Temperature Range
C
N-Ch P-Ch
V
DSS
20V -20V
R
DS(on)
0.090
0.135
HEXFET
Power MOSFET
2/26/02
IRF5851
Description
Parameter
Typ.
Max.
Units
R
JA
Maximum Junction-to-Ambient
130
C/W
Thermal Resistance
www.irf.com
1
These N and P channel MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
the extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
This Dual TSOP-6 package is ideal for applications
where printed circuit board space is at a premium and
where maximum functionality is required. With two die
per package, the IRF5851 can provide the functionality of
two SOT-23 packages in a smaller footprint. Its unique
thermal design and R
DS(on)
reduction enables an
increase in current-handling capability.
Parameter
Units
A
Absolute Maximum Ratings
-55 to + 150
l
Ultra Low On-Resistance
l
Dual N and P Channel MOSFET
l
Surface Mount
l
Available in Tape & Reel
l
Low Gate Charge
TSOP-6
PD-93998A
3
2
1
G2
G1
S 2
S 1
4
5
6
D2
D1
IRF5851
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
N-Ch
20
--
--
V
GS
= 0V, I
D
= 250A
P-Ch -20
--
--
V
GS
= 0V, I
D
= -250A
N-Ch
--
0.016
--
Reference to 25C, I
D
= 1mA
P-Ch
-- -0.011 --
Reference to 25C, I
D
= -1mA
--
-- 0.090
V
GS
= 4.5V, I
D
= 2.7A
--
-- 0.120
V
GS
= 2.5V, I
D
= 2.2A
--
-- 0.135
V
GS
= -4.5V, I
D
= -2.2A
--
-- 0.220
V
GS
= -2.5V, I
D
= -1.7A
N-Ch 0.60
--
1.25
V
DS
= V
GS
, I
D
= 250A
P-Ch -0.45
--
-1.2
V
DS
= V
GS
, I
D
= -250A
N-Ch 5.2
--
--
V
DS
= 10V, I
D
= 2.7A
P-Ch 3.5
--
--
V
DS
= -10V, I
D
= -2.2A
N-Ch
--
--
1.0
V
DS
= 16 V, V
GS
= 0V
P-Ch
--
--
-1.0
V
DS
= -16V, V
GS
= 0V
N-Ch
--
--
25
V
DS
= 16 V, V
GS
= 0V, T
J
= 70C
P-Ch
--
--
-25
V
DS
= -16V, V
GS
= 0V, T
J
= 70C
I
GSS
Gate-to-Source Forward Leakage
N-P
--
100
V
GS
= 12V
N-Ch
--
4.0
6.0
P-Ch
--
3.6
5.4
N-Ch
--
0.95
--
P-Ch
--
0.66
--
N-Ch
--
0.83
--
P-Ch
--
5.7
--
N-Ch
--
6.6
--
P-Ch
--
8.3
--
N-Ch
--
1.2
--
P-Ch
--
14
--
N-Ch
--
15
--
P-Ch
--
31
--
N-Ch
--
2.4
--
P-Ch
--
28
--
N-Ch
--
400
--
P-Ch
--
320
--
N-Ch
--
48
--
P-Ch
--
56
--
N-Ch
--
32
--
P-Ch
--
40
--
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
V
V/C
V
S
A
nC
ns
pF
N-Channel
I
D
= 2.7A, V
DS
= 10V, V
GS
= 4.5V
P-Channel
I
D
= -2.2A, V
DS
= -10V, V
GS
= -4.5V
N-Channel
V
DD
= 10V, I
D
= 1.0A, R
G
= 6.2
,
V
GS
= 4.5V
P-Channel
V
DD
= -10V, I
D
= -1.0A, R
G
= 6.0
,
V
GS
= -4.5V
N-Channel
V
GS
= 0V, V
DS
= 15V, = 1.0MHz
P-Channel
V
GS
= 0V, V
DS
= -15V, = 1.0MHz
N-Ch
P-Ch
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 & 26 )
Surface mounted on FR-4 board, t
10sec.
Pulse width
400s; duty cycle
2%.
Notes:
Parameter
Min. Typ. Max. Units
Conditions
N-Ch
--
--
0.96
P-Ch
--
--
-0.96
N-Ch
--
--
11
P-Ch
--
--
-9.0
N-Ch
--
--
1.2
T
J
= 25C, I
S
= 0.96A, V
GS
= 0V
P-Ch
--
--
-1.2
T
J
= 25C, I
S
= -0.96A, V
GS
= 0V
N-Ch
--
25
38
P-Ch
--
23
35
N-Ch
--
6.5
9.8
P-Ch
--
7.7
12
Source-Drain Ratings and Characteristics
I
S
Continuous Source Current (Body Diode)
I
SM
Pulsed Source Current (Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
A
V
ns
nC
N-Channel
T
J
= 25C, I
F
= 0.96A, di/dt = 100A/s
P-Channel
T
J
= 25C, I
F
= -0.96A, di/dt = -100A/s
IRF5851
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3
N-Channel
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
0.1
1
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
1.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
1.50V
0.1
1
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 150 C
J
TOP
BOTTOM
VGS
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
1.5V
V , Drain-to-Source Voltage (V)
I , D
r
ain-to-S
ource C
u
rrent (A
)
DS
D
1.50V
0.1
1
10
100
1.5
2.0
2.5
3.0
V = 15V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 150 C
J
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source O
n
Resistance
(Normalized)
J
D
S
(
on)
V
=
I =
GS
D
4.5V
2.7A
Fig 4. Normalized On-Resistance
Vs. Temperature
IRF5851
4
www.irf.com
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
1
10
100
0
100
200
300
400
500
600
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
C
iss
C
oss
C
rss
0
2
4
6
8
0
2
4
6
8
10
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D
2.7A
V
= 10V
DS
V
= 16V
DS
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.1
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
A
V , Drain-to-Source Voltage (V)
I , Drai
n Current (A)
I , Drai
n Current (A)
DS
D
100us
1ms
10ms
N-Channel
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 150 C
J
IRF5851
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5
N-Channel
Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Case Temperature ( C)
I , Drai
n Current (A)
C
D
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
her
m
a
l
R
e
sponse
(Z
)
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
4.5V
+
-
V
DD
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