Parameter
Max.
Units
V
DS
Drain- Source Voltage
-40
V
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ -10V
-2.5
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ -10V
-2.0
A
I
DM
Pulsed Drain Current
-10
P
D
@T
A
= 25C
Power Dissipation
2.0
P
D
@T
A
= 70C
Power Dissipation
1.3
Linear Derating Factor
0.016
mW/C
V
GS
Gate-to-Source Voltage
20
V
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
C
10/04/01
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1
IRF5804
HEXFET
Power MOSFET
Parameter
Max.
Units
R
JA
Maximum Junction-to-Ambient
62.5
C/W
Thermal Resistance
Absolute Maximum Ratings
W
V
DSS
R
DS(on)
max (m
)
)
)
)
)
I
D
-40V
198@V
GS
= -10V
-2.5A
334@V
GS
= -4.5V
-2.0A
TSOP-6
These P-channel HEXFET
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery and
load management applications.
The TSOP-6 package with its customized leadframe
produces a HEXFET
power MOSFET with R
DS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and R
DS(on)
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
Description
l
Ultra Low On-Resistance
l
P-Channel MOSFET
l
Surface Mount
l
Available in Tape & Reel
l
Low Gate Charge
T o p V ie w
1
2
D
G
A
D
D
D
S
3
4
5
6
PD - 94333
IRF5804
2
www.irf.com
FOR REVIEW ONLY
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-40
V
V
GS
= 0V, I
D
= -250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.03
V/C
Reference to 25C, I
D
= -1mA
198
V
GS
= -10V, I
D
= -2.5
334
V
GS
= -4.5V, I
D
= -2.0A
V
GS(th)
Gate Threshold Voltage
-1.0
-3.0
V
V
DS
= V
GS
, I
D
= -250A
g
fs
Forward Transconductance
2.5
S
V
DS
= -10V, I
D
= -2.5A
-10
V
DS
= -32V, V
GS
= 0V
-25
V
DS
= -32V, V
GS
= 0V, T
J
= 70C
Gate-to-Source Forward Leakage
-100
V
GS
= -20V
Gate-to-Source Reverse Leakage
100
V
GS
= 20V
Q
g
Total Gate Charge
5.7
8.5
I
D
= -2.5A
Q
gs
Gate-to-Source Charge
2.8
4.2
nC
V
DS
= -20V
Q
gd
Gate-to-Drain ("Miller") Charge
2.1
3.2
V
GS
= -10V
t
d(on)
Turn-On Delay Time
19
V
DD
= -20V
t
r
Rise Time
430
I
D
= -1.0A
t
d(off)
Turn-Off Delay Time
100
R
G
= 6.0
t
f
Fall Time
64
V
GS
= -10V
C
iss
Input Capacitance
680
V
GS
= 0V
C
oss
Output Capacitance
60
pF
V
DS
= -25V
C
rss
Reverse Transfer Capacitance
44
= 1kHz
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
-1.2
V
T
J
= 25C, I
S
= -2.0A, V
GS
= 0V
t
rr
Reverse Recovery Time
24
36
ns
T
J
= 25C, I
F
= -2.0A
Q
rr
Reverse Recovery Charge
32
49
nC
di/dt = -100A/s
Source-Drain Ratings and Characteristics
A
-10
-2.5
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width
400s; duty cycle
2%.
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
GSS
A
m
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
Surface mounted on 1 in square Cu board
IRF5804
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3
FOR REVIEW ONLY
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-
0.1
1
10
100
-VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
-I
D
, Drain-to-Source Current (A)
-3.0V
20s PULSE WIDTH
Tj = 25C
VGS
TOP -10V
-7.0V
-5.0V
-4.5V
-4.0V
-3.7V
-3.5V
BOTTOM -3.0V
0.1
1
10
100
-VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
-I
D
, Drain-to-Source Current (A)
-3.0V
20s PULSE WIDTH
Tj = 150C
VGS
TOP -10V
-7.0V
-5.0V
-4.5V
-4.0V
-3.7V
-3.5V
BOTTOM -3.0V
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
-10V
-2.5A
3.0
3.5
4.0
4.5
5.0
-VGS, Gate-to-Source Voltage (V)
0.10
1.00
10.00
-I
D
, Drain-to-Source Current
(
)
TJ = 25C
TJ = 150C
VDS = -25V
20s PULSE WIDTH
IRF5804
4
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FOR REVIEW ONLY
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
-
1
10
100
-VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1
10
100
1000
-VDS , Drain-toSource Voltage (V)
0.1
1
10
100
-I
D
, Drain-to-Source Current (A)
Tc = 25C
Tj = 150C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100sec
0.1
1
10
0.4
0.6
0.7
0.9
1.1
1.2
1.4
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 150 C
J
T = 25 C
J
0
2
4
6
8
10
0
2
4
6
8
10
12
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D
2.5A
V
= 20V
DS
V
= 32V
DS
IRF5804
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5
FOR REVIEW ONLY
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
V
DS
V
GS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
T , Case Temperature
( C)
-I , Drain Current (A)
C
D
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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