IRF4905PbF
HEXFET
Power MOSFET
PD - 94816
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-
220 contribute to its wide acceptance throughout the
industry.
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ -10V
-74
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ -10V
-52
A
I
DM
Pulsed Drain Current
-260
P
D
@T
C
= 25C
Power Dissipation
200
W
Linear Derating Factor
1.3
W/C
V
GS
Gate-to-Source Voltage
20
V
E
AS
Single Pulse Avalanche Energy
930
mJ
I
AR
Avalanche Current
-38
A
E
AR
Repetitive Avalanche Energy
20
mJ
dv/dt
Peak Diode Recovery dv/dt
-5.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Mounting torque, 6-32 or M3 screw
10 lbfin (1.1Nm)
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
0.75
R
CS
Case-to-Sink, Flat, Greased Surface
0.50
C/W
R
JA
Junction-to-Ambient
62
Thermal Resistance
V
DSS
= -55V
R
DS(on)
= 0.02
I
D
= -74A
TO-220AB
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Lead-Free
Description
11/6/03
S
D
G
IRF4905PbF
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
-1.6
V
T
J
= 25C, I
S
= -38A, V
GS
= 0V
t
rr
Reverse Recovery Time
89
130
ns
T
J
= 25C, I
F
= -38A
Q
rr
Reverse Recovery Charge
230
350
nC
di/dt = -100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-55
V
V
GS
= 0V, I
D
= -250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
-0.05
V/C Reference to 25C, I
D
= -1mA
R
DS(on)
Static Drain-to-Source On-Resistance
0.02
V
GS
= -10V, I
D
= -38A
V
GS(th)
Gate Threshold Voltage
-2.0
-4.0
V
V
DS
= V
GS
, I
D
= -250A
g
fs
Forward Transconductance
21
S
V
DS
= -25V, I
D
= -38A
-25
A
V
DS
= -55V, V
GS
= 0V
-250
V
DS
= -44V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -20V
Q
g
Total Gate Charge
180
I
D
= -38A
Q
gs
Gate-to-Source Charge
32
nC
V
DS
= -44V
Q
gd
Gate-to-Drain ("Miller") Charge
86
V
GS
= -10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
18
V
DD
= -28V
t
r
Rise Time
99
I
D
= -38A
t
d(off)
Turn-Off Delay Time
61
R
G
= 2.5
t
f
Fall Time
96
R
D
= 0.72
, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
3400
V
GS
= 0V
C
oss
Output Capacitance
1400
pF
V
DS
= -25V
C
rss
Reverse Transfer Capacitance
640
= 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
-38A, di/dt -270A/s, V
DD
V
(BR)DSS
,
T
J
175C
Notes:
Starting T
J
= 25C, L = 1.3mH
R
G
= 25
, I
AS
= -38A. (See Figure 12)
Pulse width
300s; duty cycle 2%.
S
D
G
Source-Drain Ratings and Characteristics
A
S
D
G
-74
-260
IRF4905PbF
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1
1
10
100
D
DS
20s PULSE WIDTH
T = 25C
c
A
-I , D
r
a
i
n
-
to
-S
o
u
rce
C
u
rren
t
(A
)
-V , Drain-to-Source Voltage (V)
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4.5V
1
10
100
1000
0.1
1
10
100
D
DS
A
-I , D
r
a
i
n
-
to
-S
o
u
rc
e
C
u
rre
n
t
(A
)
-V , Drain-to-Source Voltage (V)
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4.5V
20s PULSE WIDTH
T = 175C
C
1
10
100
1000
4
5
6
7
8
9
10
T = 25C
J
GS
D
A
-
I
,
D
r
ai
n-
t
o
-
S
our
ce C
u
r
r
ent
(
A
)
-V , Gate-to-Source Voltage (V)
V = -25V
20s PULSE WIDTH
DS
T = 175C
J
0.0
0.5
1.0
1.5
2.0
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
J
T , Junction Temperature (C)
R
, D
r
a
i
n
-
to
-
S
o
u
rc
e
O
n
R
e
s
i
s
t
a
n
c
e
DS
(
on)
(N
o
r
m
a
l
i
ze
d)
A
V = -10V
GS
I = -64A
D
Fig 2. Typical Output Characteristics
IRF4905PbF
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
1000
2000
3000
4000
5000
6000
7000
1
10
100
C
,
Ca
pa
c
i
t
a
n
c
e (
p
F)
A
DS
-V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0
40
80
120
160
200
G
GS
A
-V
, G
a
te
-to
-
S
o
u
r
c
e
V
o
lta
g
e
(V
)
Q , Total Gate Charge (nC)
FOR TEST CIRCUIT
SEE FIGURE 13
I = -38A
V = -44V
V = -28V
D
DS
DS
1
10
100
1000
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
T = 25C
J
V = 0V
GS
SD
SD
A
-I , R
e
ve
rse D
r
ain
C
u
rren
t
(A
)
-V , Source-to-Drain Voltage (V)
T = 175C
J
1
10
100
1000
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10ms
A
-I , D
r
a
i
n C
u
rre
nt (A
)
-V , Drain-to-Source Voltage (V)
DS
D
100s
1ms
T = 25C
T = 175C
Single Pulse
C
J
IRF4905PbF
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
V
DS
-10V
Pulse Width
1 s
Duty Factor
0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
25
50
75
100
125
150
175
0
20
40
60
80
T , Case Temperature ( C)
I , Drain Current (A)
C
D
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Ther
m
a
l
R
e
sponse
(
Z
)
1
th
J
C
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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