IR6320G
Data Sheet 6.125-G
INTELLIGENT HIGH SIDE MOSFET POWER SWITCH
V
cc(op)
5v-50v
R
ds(on)
85m
I
lim
10A
T
j(sd)
170
o
C
E
av
100mJ
Features
PWM Current Limit for Short Circuit Protection
Over-Temperature Protection
Active Output Negative Clamp
Reverse Battery Protection for Logic Circuit
Broken Ground Protection
Short to VCC Protection
Low Noise Charge Pump
Sleep Mode Supply Current
4kV ESD Protection On All Pins
Logic Ground Isolated From Power Ground
General Description
The IR6320G is a monolithic HIGH SIDE SWITCH with built
in short circuit, over- temperature, ESD, inductive load turn
off capability and diagnostic feedback.
The on-chip protection circuit goes into PWM mode, limiting
the average current during short circuit if the drain current
exceeds 10A. The protection circuit latches off the high side
switch if the junction temperature exceeds 170
C and
latches on after the junction temperature falls by 10
C. The
Vcc (drain) to OUT (source) voltage is actively clamped at 55V,
improving its performance during turn off with inductive loads.
The on-chip charge pump high side driver stage is floating
and referenced to the source of the power MOSFET. Thus
the logic to power ground isolation can be as high as 50V.
This allows operation with larger offset as well as controlling
the switch during load energy recirculation or regeneration.
A diagnostic pin is provided for status feedback of short
circuit, over temperature and open load detection.
Applications
Solenoid Driver
Programmable Logic Controller
Truth Table
Block Diagram
Available Packages
Condition
Normal
Normal
Output Open
Output Open
Shorted Output
Shorted Output
Over-Temperature
Over-Temperature
In
H
L
H
L
H
L
H
L
Out
H
L
H
H
L
L
L
Current-Limiting
PWM Mode
Dg
H
L
H
H
L
L
L
L
SO8 Package
OUT
GND
Vcc
IR6320G
2
Symbol Parameter
Min.
Max.
Units
Test Conditions
Vcc
Supply Voltage
Permanent
-0.3
50
Pin 5 to Pin 3
Reverse
-16
--
V
(1), for 10 seconds
Voffset
Logic to Power Ground Offset
Vcc -50
Vcc +0.3
Vin
Input Voltage
-0.3
7
Iin
Input Current
--
10
mA
Vout
Output Voltage
Vcc -50
Vcc +0.3
V
Iout
Output Current
--
self-limited
A
Vdg
Diagnostic Output Voltage
-0.3
7
V
Idg
Diagnostic Output Current
--
10
mA
Eav
Repetitive Avalanche Energy
--
100
mJ
I = 2A(2)
ESD1
Electrostatic Discharge
(Human Body Model)
--
4000
V
C=100 pF, R = 1500
ESD2
Electrostatic Discharge
(Machine Model)
--
500
V
C=200 pF, R = 0
PD
Power Dissipation
--
2
W
Tambient= 25
o
C
T
Jop
Operating Junction Temperature Range
-40
150
T
Stg
Storage Temperature Range
-40
150
o
C
NOTES: (1) with 15k
resistors in input and diagnostic
(2) maximum frequency depends on heatsink
(rectangular waveform)
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which
damage to the device may occur. (T
c
= 25
o
C unless otherwise specified.)
Symbol Parameter
Min. Typ. Max. Units Test Conditions
V
ccop
Operating Voltage Range
5
--
50
V
I
ccoff
Sleep Mode Supply Current
--
30
--
A
V
cc
=24V, V
in
=0V
I
ccon
Supply Current (Average)
--
1
--
mA
V
in
= 5V
I
ccac
Supply Current (AC RMS)
--
20
--
A
V
in
= 5V
V
ih
High Level Input Threshold Voltage
--
2
2.5
V
V
il
Low Level Input Threshold Voltage
1
1.8
--
I
lon
On-State Input Current
10
--
140
V
in
= 5.5V
I
loff
Off-State Input Current
1
--
30
A
V
in
= 0.4V
I
oh
Output Leakage Current
--
20
--
V
out
= 6V
I
ol
Output Leakage Current
0
--
10
V
out
= 0V
V
dgl
Low Level Diagnostic Output Voltage
--
0.3
--
V
I
dg
= 1.6mA
I
dgh
Diagnostic Output Leakage Current
0
--
10
A
V
dg
= 5V
R
DS(on)
On-State Resistance
--
70
85
m
I
out
= 2A
Static Electrical Characteristics
(T
c
= 25
o
C and V
cc
= 16V unless otherwise specified.)
Switching Electrical Characteristics
(V
CC
= 14V, Resistive Load (R
L
) = 12
, T
C
= 25
o
C.)
Symbol Parameter
Min. Typ. Max. Units Test Conditions
tc
Over-Current Cycle Time
--
3
--
mS
Dc
Over-Current Duty Cycle
--
10
--
%
t
on
Turn-On Delay Time to 90%
--
50
--
t
off
Turn-Off Delay Time to 10%
--
60
--
dv/dt
on
Slew Rate On
--
3
--
dv/dt
off
Slew Rate Off
--
5
--
V/
s
s
IR6320G
3
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
T
jsd
Thermal Shutdown Temperature
--
170
--
o
C
T
hys
Thermal Hysteresis
--
10
--
Rth
jc
Thermal Resistance, Junction to PCB
--
60
--
o
C/W
Rth
jA
Thermal Resistance, Junction to Ambient
--
80
--
Thermal Characteristics
Protection Characteristics
Symbol Parameter
Min. Typ.
Max. Units Test Conditions
I
lim
Internal Current Limit
--
10
--
A
V
sc
Short Circuit Detection Voltage
--
3.0
--
V
slh
Open Load Detection Voltage
--
3.0
--
V
V
cl1
Output Negative Clamp
40
54
--
I
out =
10mA
V
cl2
Output Negative Clamp
--
56
62
I
out =
2A
Pin # 1
Pin # 2
Pin #3 Pin #4
Pin #5 Pin #6
Pin #7
Pin #8
IN
DG
GND
OUT (source) Vcc Vcc
Vcc
Vcc
Pin Assignment
IR6320G
4
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2 , Tel: (905) 453-2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
11/96
Case Outline -- SO8 (8 pin)
LEAD ASSIGNMENTS:
1 - IN
5 - Vcc
2 - DG
6 - Vcc
3 - GND
7 - Vcc
4 - OUT
8 - Vcc
K x 45
C
8X
L
8 X
H
0.2 5 (.0 10 ) M A M
A
0 .10 (.00 4)
B 8X
0 .25 (.01 0) M C A S B S
- C -
6X
e
- B -
D
E
- A -
8 7 6 5
1 2 3 4
5
6
5
R E CO M M E ND E D F O O TP R IN T
0 .72 (.02 8 )
8 X
1 .78 (.07 0)
8X
6 .46 ( .25 5 )
1.27 ( .0 50 )
3X
D IM
IN C H E S M IL LIM E T E R S
M IN M A X M IN M A X
A .0532 .0688 1 .35 1 .75
A 1 .0040 .0098 0 .10 0 .25
B .014 .018 0 .36 0 .46
C .0 075 .0 098 0 .19 0.25
D .1 89 .1 96 4 .80 4.98
E .150 .157 3 .81 3 .99
e .050 B A S IC 1.2 7 B A S IC
e1 .025 B A S IC 0.6 35 B A S IC
H .2 284 .2 440 5 .80 6.20
K .011 .019 0 .28 0 .48
L 0 .16 .050 0 .41 1.27
0 8 0 8
N O TE S :
1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2.
2 . C O N T RO L LIN G D IM EN SIO N : IN C H .
3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S).
4 . O U T LIN E CO N F O RM S T O JED E C O U T LINE M S -0 12 AA .
D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O T R US IO N S
M O LD P R O TR U SIO NS N O T T O EXCE ED 0 .2 5 (.00 6).
D IM E NS IO N S IS T H E LE N G TH O F L EA D F O R SO L DE R IN G TO A SU B ST RA T E..
5
6
A 1
e 1
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