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Электронный компонент: 8ETH06

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1
Bulletin PD-20746 rev. F 02/04
t
rr
= 18ns typ.
I
F(AV)
= 8Amp
V
R
= 600V
Hyperfast Recovery Time
Low Forward Voltage Drop
Low Leakage Current
175C Operating Junction Temperature
2500V insulation voltage
UL E78996 approved
Features
Description/ Applications
Hyperfast Rectifier
State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop,
Hyperfast recover time, and soft recovery.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling
diodes.
The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
www.irf.com
8ETH06
8ETH06S
8ETH06-1
8ETH06FP
8ETH06
TO-220AC
Case Styles
8ETH06S
D
2
PAK
8ETH06-1
TO-262
Anode
1
3
Base
Cathode
2
N/C
Anode
1
3
Cathode
Base
Cathode
2
Anode
1
3
2
N/C
8ETH06FP
TO-220 FULLPACK
Anode
1
3
Cathode
Absolute Maximum Ratings
V
RRM
Peak Repetitive Reverse Voltage
600
V
I
F(AV)
Average Rectified Forward Current@ T
C
= 144C
8
A
@ T
C
= 108C (FULLPACK)
I
FSM
Non Repetitive Peak Surge Current @ T
J
= 25C
90
(FULLPACK)
100
I
FM
Peak Repetitive Forward Current
16
T
J
,
T
STG
Operating Junction and Storage Temperatures
- 65 to 175
C
Parameters
Max
Units
2
8ETH06, 8ETH06S, 8ETH06-1, 8ETH06FP
Bulletin
PD-20746 rev. F 02/04
www.irf.com
V
BR
,
V
r
Breakdown Voltage,
600
-
-
V
I
R
= 100A
Blocking Voltage
V
F
Forward Voltage
-
2.0
2.4
V
I
F
= 8A, T
J
= 25C
-
1.3
1.8
V
I
F
= 8A, T
J
= 150C
I
R
Reverse Leakage Current
-
0.3
50
A
V
R
= V
R
Rated
-
55
500
A
T
J
= 150C, V
R
= V
R
Rated
C
T
Junction Capacitance
-
17
-
pF
V
R
= 600V
L
S
Series Inductance
-
8.0
-
nH
Measured lead to lead 5mm from package body
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Parameters
Min Typ Max
Test Conditions
Units
t
rr
Reverse Recovery Time
-
18
22
ns
I
F
= 1A, di
F
/dt = 100A/s, V
R
= 30V
-
20
25
I
F
= 8A, di
F
/dt = 100A/s, V
R
= 30V
-
25
-
T
J
= 25C
-
40
-
T
J
= 125C
I
RRM
Peak Recovery Current
-
2.4
-
A
T
J
= 25C
-
4.8
-
T
J
= 125C
Q
rr
Reverse Recovery Charge
-
25
-
nC
T
J
= 25C
-
120
-
T
J
= 125C
t
rr
Reverse Recovery Time
-
33
-
ns
I
RRM
Peak Recovery Current
-
12
-
A
T
J
= 125C
Q
rr
Reverse Recovery Charge
-
220
-
nC
Dynamic Recovery Characteristics @ T
C
= 25C (unless otherwise specified)
I
F
= 8A
di
F
/dt = 200A/s
V
R
= 390V
Parameters
Min Typ Max
Test Conditions
Units
I
F
= 8A
di
F
/dt = 600A/s
V
R
= 390V
Parameters
Min
Typ
Max
Units
T
J
Max. Junction Temperature Range
-
-
175
C
T
Stg
Max. Storage Temperature Range
- 65
-
175
R
thJC
Thermal Resistance, Junction to Case
Per Leg
-
1.4
2
C/W
(Fullpack) Per Leg
-
3.4
4.3
R
thJA
Thermal Resistance, Junction to Ambient
Per Leg
-
-
70
R
thCS
Thermal Resistance, Case to Heatsink
-
0.5
-
Weight
-
2.0
-
g
-
0.07
-
(oz)
Mounting Torque
6.0
-
12
Kg-cm
5.0
-
10
lbf.in
Thermal - Mechanical Characteristics
Typical Socket Mount
Mounting Surface, Flat, Smooth and Greased
3
8ETH06, 8ETH06S, 8ETH06-1, 8ETH06FP
Bulletin
PD-20746 rev. F 02/04
www.irf.com
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
Forward Voltage Drop - V
FM
(V)
Instantaneous Forward Current - I
F
(A)
Reverse Voltage - V
R
(V)
Reverse Voltage - V
R
(V)
Junction Capacitance - C
T
(pF)
t
1
, Rectangular Pulse Duration (Seconds)
Thermal Impedance Z
thJC
(C/W)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Reverse Current - I
R
(A)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
0.1
1
10
100
0
1
2
3
4
T = 175C
T = 150C
T = 25C
J
J
J
0.001
0.01
0.1
1
10
100
1000
0
100 200 300 400 500 600
25C
T = 175C
J
100C
125C
150C
10
100
1000
0
100 200 300 400 500 600
T = 25C
J
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Single Pulse
(Thermal Resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
2
t
1
t
P
DM
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
4
8ETH06, 8ETH06S, 8ETH06-1, 8ETH06FP
Bulletin
PD-20746 rev. F 02/04
www.irf.com
Fig. 5 - Max. Thermal Impedance Z
thJC
Characteristics (FULLPACK)
t
1
, Rectangular Pulse Duration (Seconds)
Thermal Impedance Z
thJC
(C/W)
Fig. 6 - Max. Allowable Case Temperature
Vs. Average Forward Current
Average Forward Current - I
F
(AV)
(A)
Allowable Case Temperature (C)
Fig. 7 - Max. Allowable Case Temperature
Vs. Average Forward Current (FULLPACK)
Fig. 8 - Forward Power Loss Characteristics
Average Forward Current - I
F
(AV)
(A)
Average Forward Current - I
F
(AV)
(A)
Allowable Case Temperature (C)
Average Power Loss ( Watts )
(3) Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss =
I
F(AV)
x V
FM
@ (I
F(AV)
/
D)
(see Fig. 8);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D);
I
R
@ V
R1
= rated V
R
120
130
140
150
160
170
180
0
2
4
6
8
10
12
DC
Square wave (D = 0.50)
Rated Vr applied
see note (3)
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
DC
RMS Limit
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Single Pulse
(Thermal Resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
2
t
1
t
P
DM
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
80
100
120
140
160
180
0
2
4
6
8
10
12
14
DC
see note (3)
Square wave (D = 0.50)
Rated Vr applied
5
8ETH06, 8ETH06S, 8ETH06-1, 8ETH06FP
Bulletin
PD-20746 rev. F 02/04
www.irf.com
Fig. 10 - Typical Stored Charge vs. di
F
/dt
Fig. 9 - Typical Reverse Recovery vs. di
F
/dt
trr ( ns )
Qrr ( nC )
di
F
/dt (A/s )
di
F
/dt (A/s )
IRFP250
D.U.T.
L = 70H
V = 200V
R
0.01
G
D
S
dif/dt
ADJUST
Fig. 11- Reverse Recovery Parameter Test Circuit
Reverse Recovery Circuit
di
F
/dt
10
20
30
40
50
60
100
1000
IF = 16 A
IF = 8 A
R
J
J
V = 390V
T = 125C
T = 25C
0
50
100
150
200
250
300
350
400
100
1000
IF = 16 A
IF = 8 A
R
J
J
V = 390V
T = 125C
T = 25C