MEDIUM POWER THYRISTORS
Stud Version
50RIA SERIES
1
50 A
Bulletin I2401 rev. A 07/00
www.irf.com
50RIA
10 to 120
140 to 160
I
T(AV)
50
50
A
@ T
C
94
90
C
I
T(RMS)
80
80
A
I
TSM
@
50Hz
1430
1200
A
@ 60Hz
1490
1257
A
I
2
t
@
50Hz
10.18
7.21
KA
2
s
@ 60Hz
9.30
6.58
KA
2
s
V
DRM
/V
RRM
100 to 1200
1400 to 1600
V
t
q
typical
110
s
T
J
- 40 to 125
C
Parameters
Units
Typical Applications
Phase control applications in converters
Lighting circuits
Battery charges
Regulated power supplies and temperature and
speed control circuit
Can be supplied to meet stringent military,
aerospace and other high-reliability requirements
Major Ratings and Characteristics
Case Style
TO-208AC (TO-65)
Features
High current rating
Excellent dynamic characteristics
dv/dt = 1000V/s option
Superior surge capabilities
Standard package
Metric threads version available
Types up to 1600V V
DRM
/ V
RRM
50RIA Series
2
Bulletin I2401 rev. A 07/00
www.irf.com
Voltage
V
DRM
/V
RRM
, max. repetitive
V
RSM
, maximum non-
I
DRM
/I
RRM
max.
Type number
Code
peak and off-state voltage (1)
repetitive peak voltage (2)
@ T
J
= T
J
max.
V
V
mA
10
100
150
20
200
300
40
400
500
60
600
700
50RIA
80
800
900
15
100
1000
1100
120
1200
1300
140
1400
1500
160
1600
1700
I
T(AV)
Max. average on-state current
50
50
A
180 sinusoidal conduction
@ Case temperature
94
90
C
I
T(RMS)
Max. RMS on-state current
80
80
A
I
TSM
Max. peak, one-cycle
1430
1200
A
t = 10ms
No voltage
non-repetitive surge current
1490
1257
t = 8.3ms
reapplied
1200
1010
t = 10ms
100% V
RRM
1255
1057
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
10.18
7.21
KA
2
s
t = 10ms
No voltage
Initial T
J
= T
J
max.
9.30
6.58
t = 8.3ms
reapplied
7.20
5.10
t = 10ms
100% V
RRM
6.56
4.65
t = 8.3ms
reapplied
I
2
t
Maximum I
2
t for fusing
101.8
72.1
KA
2
s
t = 0.1 to 10ms, no voltage reapplied, T
J
= T
J
max.
V
T(TO)1
Low level value of threshold
0.94
1.02
V
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
voltage
V
T(TO)
2
High level value of threshold
1.08
1.17
(
x I
T(AV)
< I < 20
x
x I
T(AV)
), T
J
= T
J
max.
voltage
r
t1
Low level value of on-state
4.08
4.78
m
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
slope resistance
r
t2
High level value of on-state
3.34
3.97
(
x I
T(AV)
< I < 20
x
x I
T(AV)
), T
J
= T
J
max.
slope resistance
V
TM
Max. on-state voltage
1.60
1.78
V
I
pk
= 157 A, T
J
= 25C
I
H
Maximum holding current
200
mA
T
J
= 25C. Anode supply 22V, resistive load,
Initial I
T
= 2A
I
L
Latching current
400
Anode supply 6V, resistive load
50RIA
10 to 120
140 to 160
Parameter
Units
Conditions
ELECTRICAL SPECIFICATIONS
Voltage Ratings
On-state Conduction
(1)
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/s
(2)
For voltage pulses with t
p
5ms
50RIA Series
3
Bulletin I2401 rev. A 07/00
www.irf.com
dv/dt
Max. critical rate of rise of
200
T
J
= T
J
max. linear to 100% rated V
DRM
off-state voltage
500 (*)
T
J
= T
J
max. linear to 67% rated V
DRM
V/s
Parameter
50RIA
Units Conditions
Blocking
P
GM
Maximum peak gate power
10
T
J
= T
J
max, t
p
5ms
P
G(AV)
Maximum average gate power
2.5
I
GM
Max. peak positive gate current
2.5
A
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
DC gate current required
250
T
J
= - 40C
to trigger
100
mA
T
J
= 25C
50
T
J
= 125C
V
GT
DC gate voltage required
3.5
T
J
= - 40C
to trigger
2.5
V
T
J
= 25C
10
W
V
20
Max. required gate trigger
current/voltage are the
lowest value which will trigger
all units 6V anode-to-cathode
applied
V
GD
DC gate voltage not to trigger
0.2
V
T
J
= T
J
max
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
Parameter
50RIA
Units Conditions
T
J
= T
J
max
V
DRM
= rated voltage
I
GD
DC gate current not to trigger
5.0
mA
Triggering
di/dt
Max. rate of rise of turned-on
T
C
= 125C, V
DM
= rated V
DRM
current
V
DRM
600V
200
A/s
Gate pulse = 20V, 15
, t
p
= 6s, t
r
= 0.1s max.
V
DRM
1600V
100
I
TM
= (2x rated di/dt) A
t
d
Typical delay time
0.9
T
C
= 25C V
DM
= rated V
DRM
I
TM
= 10A dc resistive circuit
Gate pulse = 10V, 15
source, t
p
= 20s
t
q
Typical turn-off time
110
T
C
= 125C, I
TM
= 50A,
reapplied dv/dt = 20V/s
dir/dt = -10A/s, V
R
=50V
Parameter
50RIA
Units Conditions
Switching
s
(*) Available with dv/dt = 1000V/s, to complete code add S90 i.e. 50RIA160S90.
50RIA Series
4
Bulletin I2401 rev. A 07/00
www.irf.com
T
J
Max. operating temperature range
- 40 to 125
C
T
stg
Max. storage temperature range
- 40 to 125
C
R
thJC
Max. thermal resistance,
0.35
K/W
DC operation
junction to case
R
thCS
Max. thermal resistance,
0.25
K/W
Mounting surface, smooth, flat and greased
case to heatsink
T
Mounting torque
Min.
2.8 (25)
Nm
Non-lubricated threads
Max.
3.4 (30)
(lbf-in)
wt
Approximate weight
28 (1.0)
g (oz)
Case style
TO-208AC (TO-65)
See Outline Table
Parameter
50RIA
Units Conditions
Thermal and Mechanical Specification
R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
180
0.078
0.057
K/W
T
J
= T
J
max.
120
0.094
0.098
90
0.120
0.130
60
0.176
0.183
30
0.294
0.296
Conduction angle
Sinusoidal conduction Rectangular conduction Units
Conditions
Ordering Information Table
1
50
RIA 160 S90
M
Device Code
4
3
2
1
-
Current code
2
-
Essential part number
3
-
Voltage code: Code x 10 = V
RRM
(See Voltage Rating Table)
4
-
Critical dv/dt: None = 500V/s (Standard value)
S90 = 1000V/s (Special selection)
5
-
None = Stud base TO-208AC (TO-65) 1/4" 28UNF-2A
M
= Stud base TO-208AC (TO-65) M6 X 1
5
50RIA Series
5
Bulletin I2401 rev. A 07/00
www.irf.com
Outline Table
Fig. 1 - Current Ratings Characteristic
90
100
110
120
130
0
10
20
30
40
50
60
30
60
90
120
180
Average On-state Current (A)
M
a
x
i
mu
m A
l
l
o
w
a
b
l
e
C
a
s
e
T
e
m
p
e
r
a
t
u
r
e
(
C)
Conduction Angle
50RIA Series (100V to 1200V)
R (DC) = 0.35 K/W
thJC
80
90
100
110
120
130
0
10
20
30
40
50
60
70
80
DC
30
60
90
120
180
Average On-state Current (A)
M
a
x
i
m
u
m
A
l
l
o
w
a
b
l
e C
a
se T
e
m
p
e
r
at
u
r
e (
C
)
Conduction Period
50RIA Series (100V to 1200V)
R (DC) = 0.35 K/W
thJC
Fig. 2 - Current Ratings Characteristic
Case Style TO-208AC (TO-65)
All dimensions in millimeters (inches)
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