www.docs.chipfind.ru
V
CES
Collector-to-Emitter Voltage
600
V
I
C
Continuos Collector Current
@ T
C
= 25C
100
A
@ T
C
= 122C
50
I
CM
Pulsed Collector Current
200
I
LM
Peak Switching Current
200
I
F
Diode Continuous Forward Current
@ T
C
= 100C
48
I
FM
Peak Diode Forward Current
200
V
GE
Gate-to-Emitter Voltage
20
V
V
ISOL
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
2500
P
D
Maximum Power
IGBT
@ T
C
= 25C
445
W
Dissipation
@ T
C
= 100C
175
Diode
@ T
C
= 25C
205
@ T
C
= 100C
83
1
50MT060ULS
I27123 rev. C 02/03
V
CES
= 600V
I
C
= 100A,
T
C
= 25C
"LOW SIDE CHOPPER" IGBT MTP
Ultrafast Speed IGBT
Absolute Maximum Ratings
Parameters
Max
Units
Gen. 4 Ultrafast Speed IGBT Technology
HEXFRED
TM
Diode with UltraSoft
Reverse Recovery
Very Low Conduction and Switching
Losses
Optional SMT Thermistor (NTC)
Aluminum Nitride DBC
Very Low Stray Inductance Design for
High Speed Operation
UL approved ( file E78996 )
Features
Optimized for Welding, UPS and SMPS
Applications
Operating Frequencies > 20 kHz Hard
Switching, >200 kHz Resonant Mode
Low EMI, requires Less Snubbing
Direct Mounting to Heatsink
PCB Solderable Terminals
Very Low Junction-to-Case Thermal
Resistance
Benefits
www.irf.com
M
MTP
50MT060ULS
I27123 rev. C 02/03
2
www.irf.com
Q
g
Total Gate Charge (turn-on)
370
555
nC
I
C
= 100A
Q
ge
Gate-Emitter Charge (turn-on)
64
96
V
CC
= 480V
Q
gc
Gate-Collector Charge (turn-on)
163
245
V
GE
= 15V
E
on
Turn-On Switching Loss
0.7
1.2
mJ
I
C
= 50A, V
CC
= 480V, V
GE
= 15V,
E
off
Turn-Off Switching Loss
1.7
2.6
R
g
= 5
E
ts
Total Switching Loss
2.4
3.8
E
on
Turn-On Switching Loss
1.1
1.7
mJ
I
C
= 50A, V
CC
= 480V, V
GE
= 15V
E
off
Turn-Off Switching Loss
2.5
3.8
R
g
= 5
,
T
J
= 125C
E
ts
Total Switching Loss
3.6
5.5
Energy losses include tail and diode reverse
recovery
C
ies
Input Capacitance
9800 14700
V
GE
= 0V
C
oes
Output Capacitance
602
903
pF
V
CC
= 30V
C
res
Reverse Transfer Capacitance
121
182
f = 1.0 MHz
C
t
Diode Junction Capacitance
118
177
V
r
= 600V, f = 1.0 MHz
trr
Diode Reverse Recovery Time
99
150
ns
V
CC
= 480V, I
C
= 50A
Irr
Diode Peak Reverse Current
6.5
9.8
A
di/dt = 200A/s
Qrr
Diode Recovery Charge
320
735
nC
R
g
= 5
di
(rec)
M/
dt
Diode PeakRate of Fall of Recovery
236
A/s
During t
b
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600
V
V
GE
= 0V, I
C
= 250A
V
CE(on)
Collector-to-Emitter Voltage
1.69
2.31
V
GE
= 15V, I
C
= 50A
1.96
2.55
V
GE
= 15V, I
C
= 100A
1.88
2.24
V
GE
= 15V, I
C
= 100A, T
J
= 150C
V
GE(th)
Gate Threshold Voltage
3
6
I
C
= 0.5mA
B
VR
Diode Reverse Breakdown Voltage
600
I
R
= 200A
V
GE(th)
/ Temperature Coeff. of
- 13
mV/C V
CE
= V
GE
, I
C
= 500A
T
J
Threshold Voltage
g
fe
Forward Transconductance
22
29
S
V
CE
= 50V, I
C
= 100A
I
CES
Collector-to-Emiter Leaking Current
0.25
mA
V
GE
= 0V, V
CE
= 600V
6
V
GE
= 0V, V
CE
= 600V, T
J
= 150C
V
FM
Diode Forward Voltage Drop
1.64
1.82
V
I
F
= 100A, V
GE
= 0V
1.56
1.74
I
F
= 100A, V
GE
= 0V, T
J
= 150C
I
GES
Gate-to-Emitter Leakage Current
250
nA
V
GE
= 20V
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
Energy losses include tail and diode reverse
recovery
I27123 rev. C 02/03
3
50MT060ULS
www.irf.com
Thermal- Mechanical Specifications
T
J
Operating Junction Temperature Range
- 40
150
C
T
STG
Storage Temperature Range
- 40
125
R
thJC
Junction-to-Case
IGBT
0.18
0.28
C/ W
Diode
0.4
0.6
R
thCS
Case-to-Sink
Module
0.06
(Heatsink Compound Thermal Conductivity = 1 W/mK)
T
Mounting torque to heatsink
(3)
3 10%
Nm
Wt
Weight
66
g
Parameters
Min
Typ
Max
Units
R
0
(1)
Resistance
30
k
T
0
= 25C
(1) (2)
Sensitivity index of the thermistor
4000
K
T
0
= 25C
material
T
1
= 85C
Thermistor Specifications (50MT060ULST only)
Parameters
Min Typ Max Units Test Conditions
R
0
R
1
(2)
= exp
[
( )]
,
Temperatures in kelvin
1
T
0
(1)
T
0
,T
1
are thermistor's temperatures
1
T
1
0.1
1
10
100
f , Frequency ( kHz )
0
25
50
75
100
Load Current ( A )
Duty cycle : 50%
Tj = 125C
Tsink = 90C
Power Dissipation = 92W
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
(3) A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the
compound. Lubricated threads
50MT060ULS
I27123 rev. C 02/03
4
www.irf.com
Fig. 3 - Typical Transfer Characteristics
25
50
75
100
125
150
TC Case Temperature (C)
0
20
40
60
80
100
120
I C
Maximum DC Collector Current (A)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 2 - Typical Output Characteristics
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
20
40
60
80
100
120
140
160
TJ , Junction Temperature (C)
1
1.25
1.5
1.75
2
V
CE
, Collector-to Emitter Voltage (V)
IC = 100A
IC = 50A
IC = 25A
5.0
5.5
6.0
6.5
VGE, Gate-to-Emitter Voltage (V)
1.0
10.0
100.0
1000.0
I C
, Collector-to-Emitter Current
(
)
TJ = 25C
TJ = 150C
VCC = 50V
20s PULSE WIDTH
1
10
100
0.6
1.0
1.4
1.8
2.2
V
CE
, Collector-to-Emitter Voltage (V)
I
C
, Collector-to-Emitter Current (A
)
T
J
= 25C
T
J
= 150C
Vge = 15V
380
s Pulse Width
I27123 rev. C 02/03
5
50MT060ULS
www.irf.com
Fig. 6b Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig. 6a Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
T
h
ermal
R
e
s
p
o
n
s
e
( Z
t
h
JC
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (C/W)
i (sec)
0.200 0.000993
0.296 0.038934
0.102 0.52648
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
C
Ci= i
/
Ri
Ci=
i
/
Ri
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
1E-005
0.0001
0.001
0.01
0.1
1
T
h
e
r
m
a
l Re
sp
o
n
se
(
Z
thJC
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (C/W)
i (sec)
0.060 0.000968
0.130 0.019621
0.100 0.051755
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
C
Ci= i
/
Ri
Ci=
i
/
Ri