Preliminary Data Sheet
Repetitive Avalanche and dv/dt Rated
MOSFET Transistor P-Channel
2N7522
200Volt, 0.505
, RAD Hard MOSFET
R5
Package: SMD-0.5
Product Summary
Hex Size
Technology
BV
DSS
R
DS (on)
I
D
3
RAD Hard
-200V
0.505
-8.0A
Absolute Maximum Ratings
Parameter
Value
Units
I
D
@
V
GS
= -12V, T
C
= 25
C
Continuous Drain Current
-8.0
A
I
D
@
V
GS
= -12V, T
C
= 100
C
Continuous Drain Current
-5.0
A
P
D
@ T
C
= 25
C
Power Dissipation
75
W
V
GS
Gate-to-Source Voltage
20
V
E
AS
Single Pulse Avalanche Energy
75
mJ
I
AR
Avalanche Current
-8.0
A
E
AR
Repetitive Avalanche Energy
7.5
mJ
T
J
Operating Junction Range
-55 to 150
C
Pre-Irradiation
Electrical Characteristics @ T
J
= 25
C (Unless Otherwise Specified)
Parameter
Min
Typ.
Max
Units Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage -200
-
-
V
V
GS
=0V, I
D
=-1.0mA
R
DS(on)
Static Drain-to-Source On-State
Resistance
-
-
0.505
V
GS
=-12V, I
D
=-5.0A
V
GS (th)
Gate Threshold Voltage
-2.0
-
-4.0
V
V
DS
=V
GS
, I
D
=-1.0mA
I
DSS
Zero Gate Voltage Drain Current
-
-
-10
A
V
DS
= -160V, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
-
-
-25
A
V
DS
=-160V, T
J
=125
C
I
GSS
Gate-to-Source Leakage Forward
-
-
-100
nA
V
GS
=-20V
I
GSS
Gate-to-Source Leakage Reverse
-
-
100
nA
V
GS
=20V
Qg
Total Gate Charge
-
-
43
nC
V
GS
=-12V, I
D
=-8.0A
Thermal Resistance
Parameter
Min
Typ.
Max
Units
Test Conditions
R
thJC
Junction-to-Case
-
-
1.67
C/W
01/23/01
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