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1
SURFACE MOUNTABLE
PHASE CONTROL SCR
Bulletin I2117 rev. D 12/98
SAFE
IR
Series
25TTS..S
V
T
< 1.25V @ 16A
I
TSM
= 300A
V
RRM
800 to 1600V
www.irf.com
Major Ratings and Characteristics
D
2
PAK (SMD-220)
I
T(AV)
Sinusoidal
16
A
waveform
I
RMS
25
A
V
RRM
/ V
DRM
up to 1600
V
I
TSM
300
A
V
T
@ 16 A, T
J
= 25C
1.25
V
dv/dt
500
V/s
di/dt
150
A/s
T
J
- 40 to 125
C
Characteristics
25TTS..S
Units
Output Current in Typical Applications
T
A
= 55C, T
J
= 125C, footprint 300mm
2
NEMA FR-4 or G10 glass fabric-based epoxy
3.5
5.5
with 4 oz (140m) copper
Aluminum IMS, R
thCA
= 15C/W
8.5
13.5
A
Aluminum IMS with heatsink, R
thCA
= 5C/W
16.5
25.0
Applications
Single-phase Bridge
Three-phase Bridge Units
Description/Features
The 25TTS..S
SAFE
IR
series of silicon controlled
rectifiers are specifically designed for medium
power switching and phase control applications.
The glass passivation technology used has reli-
able operation up to 125 C junction temperature.
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identical
package outlines.
2
25TTS..S SAFE
IR
Series
Bulletin I2117 rev. D 12/98
www.irf.com
Part Number
V
RRM
, maximum
V
DRM
, maximum
I
RRM
/
I
DRM
peak reverse voltage
peak direct voltage
125C
V
V
mA
25TTS08S
800
800
10
25TTS12S
1200
1200
25TTS16S
1600
1600
Voltage Ratings
I
T(AV)
Max. Average On-state Current
16
A
@ T
C
= 93 C, 180 conduction half sine wave
I
RMS
Max. RMS On-state Current
25
I
TSM
Max. Peak One Cycle Non-Repetitive
300
10ms Sine pulse, rated V
RRM
applied
Surge Current
350
10ms Sine pulse, no voltage reapplied
I
2
t
Max. I
2
t for fusing
450
A
2
s
10ms Sine pulse, rated V
RRM
applied
630
10ms Sine pulse, no voltage reapplied
I
2
t
Max. I
2
t for fusing
6300
A
2
s
t = 0.1 to 10ms, no voltage reapplied
V
TM
Max. On-state Voltage Drop
1.25
V
@ 16A, T
J
= 25C
r
t
On-state slope resistance
12.0
m
T
J
= 125C
V
T(TO)
Threshold Voltage
1.0
V
I
RM
/I
DM
Max.Reverse and Direct
0.5
mA
T
J
= 25 C
Leakage Current
10
T
J
= 125 C
I
H
Holding Current
Typ. Max.
Anode Supply = 6V, Resistive load, Initial I
T
=1A
--
100
mA
25TTS08S, 25TTS12S
100
150
25TTS16S
I
L
Max. Latching Current
200
mA
Anode Supply = 6V, Resistive load
dv/dt Max. Rate of Rise of off-state Voltage
500
V/s
di/dt Max. Rate of Rise of turned-on Current
150
A/s
Absolute Maximum Ratings
Parameters
25TTS..S Units
Conditions
V
R
= rated V
RRM
/ V
DRM
3
25TTS..S SAFE
IR
Series
Bulletin I2117 rev. D 12/98
www.irf.com
Triggering
P
GM
Max. peak Gate Power
8.0
W
P
G(AV)
Max. average Gate Power
2.0
+ I
GM
Max. paek positive Gate Current
1.5
A
- V
GM
Max. paek negative Gate Voltage
10
V
I
GT
Max. required DC Gate Current
60
mA
Anode supply = 6V, resistive load, T
J
= - 10C
to trigger
45
Anode supply = 6V, resistive load, T
J
= 25C
20
Anode supply = 6V, resistive load, T
J
= 125C
V
GT
Max. required DC Gate Voltage
2.5
V
Anode supply = 6V, resistive load, T
J
= - 10C
to trigger
2.0
Anode supply = 6V, resistive load, T
J
= 25C
1.0
Anode supply = 6V, resistive load, T
J
= 125C
V
GD
Max. DC Gate Voltage not to trigger
0.25
T
J
= 125C, V
DRM
= rated value
I
GD
Max. DC Gate Current not to trigger
2.0
mA
T
J
= 125C, V
DRM
= rated value
Parameters
25TTS..S Units
Conditions
Switching
Parameters
25TTS..S Units
Conditions
t
gt
Typical turn-on time
0.9
s
T
J
= 25C
t
rr
Typical reverse recovery time
4
T
J
= 125C
t
q
Typical turn-off time
110
T
J
Max. Junction Temperature Range
- 40 to 125
C
T
stg
Max. Storage Temperature Range
- 40 to 125
C
Soldering Temperature
240
C
for 10 seconds (1.6mm from case)
R
thJC
Max. Thermal Resistance Junction
1.1
C/W
DC operation
to Case
R
thJA
Typ. Thermal Resistance Junction
40
C/W
to Ambient (PCB Mount)**
wt
Approximate Weight
2 (0.07)
g (oz.)
T
Case Style
D
2
Pak (SMD-220)
Thermal-Mechanical Specifications
Parameters
25TTS..S Units
Conditions
**When mounted on 1" square (650mm
2
) PCB of FR-4 or G-10 material 4 oz (140m) copper 40C/W
For recommended footprint and soldering techniques refer to application note #AN-994
4
25TTS..S SAFE
IR
Series
Bulletin I2117 rev. D 12/98
www.irf.com
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
90
100
110
120
130
0
5
10
15
20
30
60
90
120
180
M
a
x
i
mu
m A
l
l
o
w
a
b
l
e
C
a
s
e
T
e
mp
e
r
a
t
u
r
e
(
C
)
Conduction Angle
Average On-state Current (A)
25TTS.. Series
R (DC) = 1.1 C/W
thJC
80
90
100
110
120
130
0
5
10
15
20
25
30
DC
30
60
90
120
180
Average On-state Current (A)
M
a
x
i
m
u
m
A
l
lo
wa
b
l
e
C
a
s
e
T
e
m
p
e
r
a
t
u
r
e
(
C
)
Conduction Period
25TTS.. Series
R (DC) = 1.1 C/W
thJC
0
5
10
15
20
25
0
4
8
12
16
20
RMS Limit
Conduction Angle
M
a
x
i
mu
m A
v
e
r
a
g
e
O
n
-
s
t
a
t
e
P
o
w
e
r
Lo
s
s
(
W
)
Average On-state Current (A)
180
120
90
60
30
25TTS.. Series
T = 125C
J
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
DC
180
120
90
60
30
RMS Limit
Conduction Period
M
a
x
i
mu
m A
v
e
r
a
g
e
O
n
-
s
t
a
t
e
P
o
w
e
r
Lo
ss (
W
)
Average On-state Current (A)
25TTS.. Series
T = 125C
J
150
200
250
300
350
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
P
e
ak
Hal
f
S
i
n
e
W
a
v
e
O
n
-
s
t
a
t
e
C
u
r
r
e
n
t
(
A
)
Initial T = 125C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
25TTS.. Series
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
100
150
200
250
300
350
400
0.01
0.1
1
P
e
a
k
H
a
l
f
Si
n
e
W
a
v
e
O
n
-
s
ta
te Cu
r
r
e
n
t (
A
)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T = 125C
No Voltage Reapplied
Rated V Reapplied
RRM
J
25TTS.. Series
5
25TTS..S SAFE
IR
Series
Bulletin I2117 rev. D 12/98
www.irf.com
Fig. 7 - On-state Voltage Drop Characteristics
Fig. 8 - Gate Characteristics
Fig. 9 - Thermal Impedance Z
thJC
Characteristics
1
10
100
1000
0
1
2
3
4
5
T = 25C
J
I
n
s
t
a
n
ta
n
e
ou
s
O
n
-
s
t
a
te
Cu
r
r
e
n
t
(
A
)
Instantaneous On-state Voltage (V)
T = 125C
J
25TTS.. Series
0.01
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
Squar e Wave Pulse Duration (s)
Steady State Value
(DC Operation)
Single Pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
25TTS.. Series
th
J
C
T
r
a
n
s
i
en
t
T
h
er
m
a
l
I
m
p
e
d
a
n
c
e Z
(
C
/
W
)
0.1
1
10
100
0.001
0.01
0.1
1
10
100
(b)
(a)
Rectangular gate pulse
(4)
(3)
(2)
(1)
Instantaneous Gate Current (A)
I
n
s
t
a
n
ta
n
e
o
u
s
G
a
te
V
o
l
t
a
g
e
(
V
)
TJ
=
2
5
C
T
J
=
125
C
b)Recommended load line for
Frequency Limited by PG(AV)
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 s, tp >= 6 s
TJ
=
-
1
0
C
25TTS.. Series
IGD
VGD
<= 30% rated di/dt: 10 V, 65 ohms
tr = 1 s, tp >= 6 s
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
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