1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFG40N10LE, RFP40N10LE, RF1S40N10LESM
40A, 100V, 0.040 Ohm, Logic Level
N-Channel Power MOSFETs
These N-Channel enhancement mode power MOSFETs are
manufactured using the latest manufacturing process
technology. This process, which uses feature sizes
approaching those of LSI integrated circuits gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as
switching regulators, switching converters, motor drivers and
relay drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA49163.
Features
40A, 100V
r
DS(ON)
= 0.040
Temperature Compensating PSPICE
Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG40N10LE
TO-247
FG40N10L
RFP40N10LE
TO-220AB
FP40N10L
RF1S40N10LESM
TO-263AB
F40N10LE
NOTE: When ordering, use the entire part number. Add the suffix, 9A, to
obtain the TO-263AB variant in tape and reel, i.e. RF1S40N10LESM9A.
D
G
S
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-263AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
October 1999
File Number
4061.5
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFG40N10LE, RFP40N10LE,
RF1S40N10LESM
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
100
V
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
100
V
Gate to Source Voltage (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
10
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
40
Refer to Peak Current Curve
A
Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Refer to UIS Curve
Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150
1.00
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V (Figure 13)
100
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A (Figure 12)
1
-
3
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 95V, V
GS
= 0V
-
-
1
A
V
DS
= 90V, V
GS
= 0V, T
C
= 150
o
C
-
-
250
A
Gate to Source Leakage Current
I
GSS
V
GS
=
10V
-
-
10
A
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 40A, V
GS
= 5V
-
-
0.040
Turn-On Time
t
ON
V
DD
= 50V, I
D
= 40A, R
L
= 1.25
,
V
GS
= 5V, R
GS
= 2.5
(Figures 10, 18, 19)
-
-
200
ns
Turn-On Delay Time
t
d(ON)
-
22
-
ns
Rise Time
t
r
-
140
-
ns
Turn-Off Delay Time
t
d(OFF)
-
70
-
ns
Fall Time
t
f
-
65
-
ns
Turn-Off Time
t
OFF
-
-
165
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 10V
V
DD
= 80V,
I
D
= 40A,
R
L
= 2.0
(Figures 20, 21)
-
145
180
nC
Gate Charge at 5V
Q
g(5)
V
GS
= 0V to 5V
-
85
105
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 1V
-
3
4
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 14)
-
3000
-
pF
Output Capacitance
C
OSS
-
500
-
pF
Reverse Transfer Capacitance
C
RSS
-
200
-
pF
Thermal Resistance Junction-to-Case
R
JC
All Packages
-
-
1.0
o
C/W
Thermal Resistance Junction-to-Ambient
R
JA
TO-247
-
-
30
o
C/W
TO-220AB and TO-263AB
-
-
80
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 40A
-
-
1.5
V
Diode Reverse Recovery Time
t
rr
I
SD
= 40A, dI
SD
/dt = 100A/
s
-
-
205
ns
NOTES:
2. Pulse test: pulse width
80
s, duty cycle
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
RFG40N10LE, RFP40N10LE, RF1S40N10LESM
3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
20
10
0
25
50
75
100
125
150
30
50
40
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
175
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
-2
10
-1
10
0
0.01
2
0.1
1
0.5
0.2
0.1
0.05
0.01
0.02
10
-4
10
1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
P
DM
t
1
t
2
SINGLE PULSE
Z
JC
, NORMALIZED
THERMAL IMPED
ANCE
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
10
100
1
100
10
I
D
, DRAIN CURRENT (A)
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
100
s
10ms
1ms
500
200
T
C
= 25
o
C
T
J
= 175
o
C
t, PULSE WIDTH (s)
500
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
100
I
DM
, PEAK CURRENT CAP
ABILITY (A)
V
GS
= 5V
THERMAL IMPEDANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 10V
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I
I
25
175
T
C
150
-----------------------
=
T
C
= 25
o
C
RFG40N10LE, RFP40N10LE, RF1S40N10LESM
4
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified (Continued)
0.001
0.01
0.1
1
10
10
100
1
500
I
AS
, A
V
ALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
0
20
60
0
1.5
3.0
4.5
6.0
40
80
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
V
GS
= 4V
V
GS
= 5V
V
GS
= 10V
V
GS
= 2.5V
PULSE DURATION = 80
s
T
C
= 25
o
C
DUTY CYCLE = 0.5% MAX
0
3.0
4.5
6.0
1.5
0
20
40
60
80
175
o
C
I
DS(ON)
, DRAIN T
O
SOURCE CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
-55
o
C
25
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
25
50
75
100
0
3.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(ON)
, DRAIN T
O
SOURCE
2.0
I
D
= 80A
3.5
4.5
5.0
I
D
= 40A
I
D
= 10A
I
D
= 20A
4.0
2.5
PULSE DURATION = 80
s, V
DD
= 15V
ON RESIST
ANCE (m
)
DUTY CYCLE = 0.5% MAX.
400
20
30
40
50
0
700
600
500
200
0
10
SWITCHING TIME (ns)
R
GS
, GATE TO SOURCE RESISTANCE (
)
t
d(OFF)
t
d(ON)
t
r
t
f
100
300
V
DD
= 50V, I
D
= 40A, R
L
= 1.25
0
0.50
1.00
1.50
2.00
-80
-40
0
40
80
120
160
NORMALIZED DRAIN T
O
SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
2.50
200
I
D
= 40A
V
GS
= 5V,
PULSE DURATION = 80
s,
ON RESIST
ANCE
DUTY CYCLE = 0.5% MAX.
RFG40N10LE, RFP40N10LE, RF1S40N10LESM
5
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 15. SWITCHING WAVEFORMS FOR CONSTANT GATE
CURRENT
Test Circuits and Waveforms
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
-80
-40
0
40
80
120
160
NORMALIZED GA
TE
THRESHOLD V
O
L
T
A
G
E
T
J
, JUNCTION TEMPERATURE (
o
C)
200
1.50
1.00
0.75
0.50
1.25
V
GS
= V
DS
, I
D
= 250
A
1.50
1.00
0.75
0.50
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
BREAKDO
WN V
O
L
T
A
G
E
200
1.25
I
D
= 250
A
3500
2800
1400
0
0
5
10
15
20
25
C, CAP
A
CIT
ANCE (pF)
C
RSS
2100
C
ISS
C
OSS
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
700
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
100
75
50
25
0
20
I
G REF
(
)
I
G ACT
(
)
----------------------
t, TIME (
s)
80
I
G REF
(
)
I
G ACT
(
)
----------------------
5.00
3.75
2.50
1.25
0
V
DS
, DRAIN T
O
SOURCE V
O
L
T
A
GE (V)
V
GS
, GA
TE T
O
SOURCE V
O
L
T
A
GE (V)
R
L
= 2.5
I
G(REF)
= 1.7mA
V
GS
= 5V
V
DD
= BV
DSS
V
DD
= 0.75 BV
DSS
V
DD
= 0.50 BV
DSS
V
DD
= 0.25 BV
DSS
PLATEAU VOLTAGES IN
DESCENDING ORDER:
V
DD
= BV
DSS
V
DD
= BV
DSS
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
RFG40N10LE, RFP40N10LE, RF1S40N10LESM
PDF 
ZIP