Semiconductor
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS
|
Copyright
Harris Corporation 1998
BUZ73A
5.8A, 200V, 0.600 Ohm, N-Channel Power
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA4600.
Features
5.8A, 200V
r
DS(ON)
= 0.600
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
BUZ73A
TO-220AB
BUZ73A
NOTE: When ordering, use the entire part number.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
Data Sheet
October 1998
File Number
2263.1
[ /Title
(BUZ73
A)
/Subject
(5.8A,
200V,
0.600
Ohm, N-
Channel
Power
MOS-
FET)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FET,
TO-
220AB)
/Creator
()
/DOCIN
FO pdf-
mark
[ /Page-
Mode
/UseOut-
lines
/DOC-
VIEW
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
BUZ76A
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
200
V
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
200
V
Continuous Drain Current (T
C
= 30
o
C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
5.8
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
23
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
40
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.32
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
E
IEC Climatic Category - DIN IEC 68-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
55/150/56
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V
200
-
-
V
Gate to Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 1mA (Figure 9)
2.1
3
4
V
Zero Gate Voltage Drain Current
I
DSS
T
J
= 25
o
C, V
DS
= 200V, V
GS
= 0V
-
20
250
A
T
J
= 125
o
C, V
DS
= 200V, V
GS
= 0V
-
100
1000
A
Gate to Source Leakage Current
I
GSS
V
GS
= 20V, V
DS
= 0V
-
10
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 3.5A, V
GS
= 10V (Figure 8)
-
0.5
0.600
Forward Transconductance (Note 2)
gfs
V
DS
= 25V, I
D
= 3.5A (Figure 11)
2.2
3.5
-
S
Turn-On Delay Time
t
d(ON)
V
CC
= 30V, I
D
2.8A, V
GS
= 10V, R
GS
= 50
,
R
L
= 10
. (Figures 14, 15)
-
15
20
ns
Rise Time
t
r
-
40
60
ns
Turn-Off Delay Time
t
d(OFF)
-
70
90
ns
Fall Time
t
f
-
40
55
ns
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 10)
-
450
600
pF
Output Capacitance
C
OSS
-
100
160
pF
Reverse Transfer Capacitance
C
RSS
-
50
80
pF
Thermal Resistance Junction to Case
R
JC
3.1
o
C/W
Thermal Resistance Junction to Ambient
R
JA
75
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
T
C
= 25
o
C
-
-
5.8
A
Pulsed Source to Drain Current
I
SDM
-
-
23
A
Drain to Source Diode Voltage
V
SD
T
J
= 25
o
C, I
SD
= 11.6A, V
GS
= 0V
-
1.4
1.7
V
Reverse Recovery Time
t
rr
T
J
= 25
o
C, I
SD
= 5.8A, dI
SD
/dt = 100A/
s,
V
R
= 100V
-
200
-
ns
Reverse Recovery Charge
Q
RR
-
0.6
-
C
NOTES:
2. Pulse Test: Pulse width
300
s, duty cycle
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
BUZ73A
3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 18. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 19. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 20. MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 21. FORWARD BIAS SAFE OPERATING AREA
FIGURE 22. OUTPUT CHARACTERISTICS
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
4
3
2
1
0
0
50
100
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
, DRAIN CURRENT (A)
V
GS
10V
6
5
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
tp, RECTANGULAR PULSE DURATION (s)
0.1
0.02
0.2
0.5
0.01
0.05
0
Z
JC,
TRANSIENT THERMAL IMPED
ANCE
1
0.1
0.01
P
DM
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
+ T
C
t
1
t
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
1
I
D
, DRAIN CURRENT (A)
10
2
10
2
10
0
10
1
10
0
10
-1
10
3
10
s
1
s
1ms
10ms
100
s
DC
100ms
T
J
= MAX RATED
OPERATION IN THIS
AREA MAY BE LIMITED
BY r
DS(ON)
T
C
= 25
o
C
15
10
5
0
0
5
10
15
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
25
30
PULSE DURATION = 80
s
T
J
= 25
o
C
P
D
= 40W
V
GS
= 7.0V
7.5V
V
GS
= 6.0V
V
GS
= 5.5V
V
GS
= 5.0V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 6.5V
10V
20V
8.0V
BUZ73A
4
FIGURE 23. TRANSFER CHARACTERISTICS
FIGURE 24. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 25. DRAIN TO SOURCE ON RESISTANCE vs
JUNCTION TEMPERATURE
FIGURE 26. GATE THRESHOLD VOLTAGE vs JUNCTION
TEMPERATURE
FIGURE 27. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 28. TRANSCONDUCTANCE vs DRAIN CURRENT
Typical Performance Curves
Unless Otherwise Specified (Continued)
0
5
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
15
10
5
0
I
DS(ON)
, DRAIN T
O
SOURCE CURRENT (A)
PULSE DURATION = 80
s
V
DS
= 25V
T
J
= 25
o
C
0
5
10
15
3
2
1
0
I
D
, DRAIN CURRENT (A)
r
DS(ON),
ON ST
A
TE RESIST
ANCE (
)
8V
7V
7.5V
V
GS
= 5V
5.5V
6V
6.5V
9V
10V
20V
PULSE DURATION = 80
s
-50
0
50
100
150
r
DS(ON)
, DRAIN T
O
SOURCE
2.0
1.5
1.0
0.5
0
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 3.5A
V
GS
= 10V
ON RESIST
ANCE (
)
PULSE DURATION = 80
s
-50
0
50
100
150
V
GS(TH)
, GA
TE THRESHOLD V
O
L
T
A
GE (V)
4
3
2
1
0
T
J
, JUNCTION TEMPERATURE (
o
C)
V
DS
= V
GS
, I
D
= 1mA
0
10
20
30
40
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
1
10
0
10
-1
10
-2
C, CAP
A
CIT
ANCE (nF)
C
ISS
C
OSS
C
RSS
V
GS
= 0, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GS
5
4
3
2
1
0
0
5
10
15
I
D
, DRAIN CURRENT (A)
g
fs
, TRANSCONDUCT
ANCE (S)
PULSE DURATION = 80
s
V
DS
= 25V
T
J
= 25
o
C
BUZ73A
5
FIGURE 29. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 30. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
FIGURE 31. SWITCHING TIME TEST CIRCUIT
FIGURE 32. RESISTIVE SWITCHING WAVEFORMS
FIGURE 33. GATE CHARGE TEST CIRCUIT
FIGURE 34. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
0
0.5
1.0
1.5
2.0
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
10
2
10
1
10
0
10
-1
I
SD
, SOURCE T
O
DRAIN CURRENT (A)
PULSE DURATION = 80
s
T
J
= 150
o
C
T
J
= 25
o
C
2.5
3.0
15
10
5
0
0
5
10
Q
g(TOT)
, TOTAL GATE CHARGE (nC)
V
GS
, GA
TE T
O
SOURCE V
O
L
T
A
GE (V)
I
D
= 10.5A
V
DS
= 40V
V
DS
= 160V
15
20
25
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
0.3
F
12V
BATTERY
50k
V
DS
S
DUT
D
G
I
g(REF)
0
(ISOLATED
V
DS
0.2
F
CURRENT
REGULATOR
I
D
CURRENT
SAMPLING
I
G
CURRENT
SAMPLING
SUPPLY)
RESISTOR
RESISTOR
SAME TYPE
AS DUT
Q
g(TOT)
Q
gd
Q
gs
V
DS
0
V
GS
V
DD
I
g(REF)
0
BUZ73A
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