11
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
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Copyright
Intersil Corporation 1999
BUZ71
14A, 50V, 0.100 Ohm, N-Channel Power
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA9770.
Features
14A, 50V
r
DS(ON)
= 0.100
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
BUZ71
TO-220AB
BUZ71
NOTE: When ordering, use the entire part number.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
Data Sheet
June 1999
File Number
2418.2
12
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
BUZ71
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
50
V
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
50
V
Continuous Drain Current, T
C
= 55
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
14
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
56
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
40
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.32
W/
o
C
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
100
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
E
IEC Climatic Category - DIN IEC 68-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
55/150/56
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V
50
-
-
V
Gate to Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 1mA (Figure 9)
2.1
3
4
V
Zero Gate Voltage Drain Current
I
DSS
T
J
= 25
o
C, V
DS
= 50V, V
GS
= 0V
-
20
250
A
T
J
= 125
o
C, V
DS
= 50V, V
GS
= 0V
-
100
1000
A
Gate to Source Leakage Current
I
GSS
V
GS
= 20V, V
DS
= 0V
-
10
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 9A, V
GS
= 10V (Figure 8)
-
0.09
0.1
Forward Transconductance (Note 2)
gfs
V
DS
= 25V, I
D
= 9A (Figure 11)
3.0
5.2
-
S
Turn-On Delay Time
t
d(ON)
V
CC
= 30V, I
D
3A, V
GS
= 10V, R
GS
= 50
,
R
L
= 10
-
20
30
ns
Rise Time
t
r
-
55
85
ns
Turn-Off Delay Time
t
d(OFF)
-
70
90
ns
Fall Time
t
f
-
80
110
ns
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 10)
-
480
650
pF
Output Capacitance
C
OSS
-
280
450
pF
Reverse Transfer Capacitance
C
RSS
-
160
280
pF
Thermal Resistance Junction to Case
R
JC
3.1
o
C/W
Thermal Resistance Junction to Ambient
R
JA
75
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
T
C
= 25
o
C
-
-
14
A
Pulsed Source to Drain Current
I
SDM
T
C
= 25
o
C
-
-
56
A
Source to Drain Diode Voltage
V
SD
T
J
= 25
o
C, I
SD
= 28A, V
GS
= 0V, (Figure 12)
-
1.6
1.8
V
Reverse Recovery Time
t
rr
T
J
= 25
o
C, I
SD
= 14A, dI
SD
/dt = 100A/
s,
V
R
= 30V
-
120
-
ns
Reverse Recovery Charge
Q
RR
-
0.15
-
C
NOTES:
2. Pulse Test: Pulse width
300
s, duty cycle
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 10V, starting T
J
= 25
o
C, L = 820
H, I
PEAK
= 14A. (See Figures 14 and 15).
BUZ71
13
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
8
6
4
2
0
0
50
100
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
, DRAIN CURRENT (A)
12
10
V
GS
10V
18
16
14
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION (s)
Z
JC,
TRANSIENT THERMAL IMPED
ANCE
1
0.1
0.01
P
DM
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
+ T
C
t
1
t
2
0.5
0.2
0.1
0.05
0.02
0.01
0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
1
I
D
, DRAIN CURRENT (A)
10
2
10
2
10
0
10
1
10
0
10
-1
10
3
10
s
5
s
1ms
10ms
100
s
DC
100ms
T
J
= MAX RATED
OPERATION IN THIS
AREA MAY BE LIMITED
BY r
DS(ON)
T
C
= 25
o
C
SINGLE PULSE
30
20
10
0
0
1
2
6
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
V
GS
= 20V
10V
P
D
= 40W
3
4
5
PULSE
V
GS
= 6.0V
V
GS
= 5.5V
V
GS
= 5.0V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 6.5V
V
GS
= 7.0V
V
GS
= 7.5V
V
GS
= 8.0V
DURATION = 80
s
DUTY
CYCLE = 0.5% MAX
BUZ71
14
FIGURE 6. TRANSFER CHARACTERISTICS
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
JUNCTION TEMPERATURE
FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION
TEMPERATURE
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT
Typical Performance Curves
Unless Otherwise Specified (Continued)
0
5
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
15
10
5
0
I
DS(ON)
, DRAIN T
O
SOURCE CURRENT (A)
PULSE DURATION = 80
s
V
DS
= 25V
T
J
= 25
o
C
DUTY CYCLE = 0.5% MAX
0
10
30
20
0.3
0.2
0.1
0
I
D
, DRAIN CURRENT (A)
r
DS(ON),
DRAIN T
O
SOURCE
ON RESIST
ANCE (
)
0.4
10V
20V
V
GS
= 5V 5.5V 6V 6.5V 7V 7.5V 8V
9V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
r
DS(ON)
, DRAIN T
O
SOURCE
0.20
0.10
0
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
0.30
80
V
GS
= 10V, I
D
= 9A
160
ON RESIST
ANCE (
)
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
-50
0
50
100
150
V
GS(TH)
, GA
TE THRESHOLD V
O
L
T
A
GE (V)
4
3
2
1
0
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 1mA
V
DS
= V
GS
0
10
20
30
40
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
1
10
0
10
-1
10
-2
C, CAP
A
CIT
ANCE (nF)
C
ISS
C
OSS
C
RSS
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+C
GS
V
GS
= 0, f = 1MHz
6
3
4
2
1
0
0
5
10
15
I
D
, DRAIN CURRENT (A)
g
fs
, TRANSCONDUCT
ANCE (S)
5
PULSE DURATION = 80
s
V
DS
= 25V
T
J
= 25
o
C
DUTY CYCLE = 0.5% MAX
BUZ71
15
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. SWITCHING TIME TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
0
0.5
1.0
1.5
2.0
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
10
2
10
1
10
0
10
-1
I
SD
, SOURCE T
O
DRAIN CURRENT (A)
PULSE DURATION = 80
s
T
J
= 150
o
C
T
J
= 25
o
C
2.5
3.0
DUTY CYCLE = 0.5% MAX
15
10
5
0
0
10
Q
g
, GATE CHARGE (nC)
V
GS
, GA
TE T
O
SOURCE V
O
L
T
A
GE (V)
I
D
= 18A
V
DS
= 10V
V
DS
= 40V
20
30
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
BUZ71
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