Semiconductor
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS
|
Copyright
Harris Corporation 1998
BUZ45B
10A, 500V, 0.500 Ohm, N-Channel Power
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA17435.
Features
10A, 500V
r
DS(ON)
= 0.500
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
Symbol
Packaging
JEDEC TO-204AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
BUZ45B
TO-204AA
BUZ45B
NOTE: When ordering, use the entire part number.
G
D
S
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
Data Sheet
October 1998
File Number
2259.1
[ /Title
(BUZ45
B)
/Subject
(10A,
500V,
0.500
Ohm, N-
Channel
Power
MOS-
FET)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FET,
TO-
204AA)
/Creator
()
/DOCIN
FO pdf-
mark
[ /Page-
Mode
/UseOut-
lines
/DOC-
VIEW
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
BUZ45B
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
500
V
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
500
V
Continuous Drain Current (T
C
= 35
o
C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
10
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
40
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
125
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.0
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
E
IEC Climatic Category - DIN IEC 68-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
55/150/56
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
260
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V
500
-
-
V
Gate to Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 1mA (Figure 9)
2.1
3
4
V
Zero Gate Voltage Drain Current
I
DSS
T
J
= 25
o
C, V
DS
= 500V, V
GS
= 0V
-
20
250
A
T
J
= 125
o
C, V
DS
= 500V, V
GS
= 0V
-
100
1000
A
Gate to Source Leakage Current
I
GSS
V
GS
= 20V, V
DS
= 0V
-
10
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 5A, V
GS
= 10V (Figure 8)
-
0.49
0.50
Forward Transconductance (Note 2)
gfs
V
DS
= 25V, I
D
= 5A (Figure 11)
2.7
5
-
S
Turn-On Delay Time
t
d(ON)
V
CC
= 30V, I
D
2.9A, V
GS
= 10V,
R
GS
= 50
,
R
L
= 10
. (Figures 14, 15)
-
50
75
ns
Rise Time
t
r
-
80
120
ns
Turn-Off Delay Time
t
d(OFF)
-
330
430
ns
Fall Time
t
f
-
110
140
ns
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 10)
-
3800
4900
pF
Output Capacitance
C
OSS
-
250
400
pF
Reverse Transfer Capacitance
C
RSS
-
100
170
pF
Thermal Resistance Junction to Case
R
JC
1
o
C/W
Thermal Resistance Junction to Ambient
R
JA
35
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
T
C
= 25
o
C
-
-
10
A
Pulsed Source to Drain Current
I
SDM
-
-
40
A
Source to Drain Diode Voltage
V
SD
T
J
= 25
o
C, I
SD
= 20A, V
GS
= 0V
-
1.3
1.7
V
Reverse Recovery Time
t
rr
T
J
= 25
o
C, I
SD
= 10A, dI
SD
/dt = 100A/
s,
V
R
= 100V
-
1200
-
ns
Reverse Recovery Charge
Q
RR
-
12
-
C
NOTES:
2. Pulse Test: Pulse width
300
s, duty cycle
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
BUZ45B
3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
8
6
4
2
0
0
50
100
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
, DRAIN CURRENT (A)
V
GS
10V
12
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION (s)
D =
0.5
0.2
0.1
0.05
0.02
0.01
0
Z
JC,
NORMALIZED TRANSIENT
1
0.1
0.01
P
DM
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
t
1
t
2
THERMAL IMPED
ANCE
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
1
I
D
, DRAIN CURRENT (A)
10
2
10
2
10
0
10
1
10
0
10
-1
10
3
10
s
0.8
s
1ms
10ms
100
s
DC
100ms
T
J
= MAX RATED
OPERATION IN THIS
AREA MAY BE LIMITED
BY r
DS(ON)
T
C
= 25
o
C
30
20
10
0
0
10
20
30
40
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
PULSE DURATION = 80
s
T
J
= 25
o
C
P
D
= 125W
V
GS
= 6.0V
V
GS
= 5.5V
V
GS
= 5.0V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 6.5V
V
GS
= 7.0V
7.5V
8.0V
10V
20V
BUZ45B
4
FIGURE 6. TRANSFER CHARACTERISTICS
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
JUNCTION TEMPERATURE
FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION
TEMPERATURE
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT
Typical Performance Curves
Unless Otherwise Specified (Continued)
0
5
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
15
10
5
0
I
DS(ON)
, DRAIN T
O
SOURCE CURRENT (A)
PULSE DURATION = 80
s
V
DS
= 25V
T
J
= 25
o
C
2.0
1.5
1.0
0.5
0
0
10
20
30
I
D
, DRAIN CURRENT (A)
r
DS(ON)
, ON-ST
A
TE RESIST
ANCE (
)
7.5V
8V
9V
10V
20V
V
GS
= 5V 5.5V
6V
6.5V
7V
PULSE DURATION = 80
s
-50
0
50
100
150
r
DS(ON)
, DRAIN T
O
SOURCE
1.6
1.2
0.8
0.4
0
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 5A
V
GS
= 10V
ON RESIST
ANCE (
)
PULSE DURATION = 80
s
-50
0
50
100
150
V
GS(TH)
, GA
TE THRESHOLD V
O
L
T
A
GE (V)
4
3
2
1
0
T
J
, JUNCTION TEMPERATURE (
o
C)
V
DS
= V
GS
, I
D
= 1mA
0
10
20
30
40
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
1
10
0
10
-1
10
-2
C, CAP
A
CIT
ANCE (nF)
C
ISS
C
OSS
C
RSS
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GS
V
GS
= 0, f = 1MHz
5
4
3
2
1
0
0
5
10
15
I
D
, DRAIN CURRENT (A)
g
fs
, TRANSCONDUCT
ANCE (S)
PULSE DURATION = 80
s
V
DS
= 25V
T
J
= 25
o
C
6
7
BUZ45B
5
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
FIGURE 14. SWITCHING TIME TEST CIRCUIT
FIGURE 15. RESISTIVE SWITCHING WAVEFORMS
FIGURE 16. GATE CHARGE TEST CIRCUIT
FIGURE 17. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
0
0.5
1.0
1.5
2.0
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
10
2
10
1
10
0
10
-1
I
SD
, SOURCE T
O
DRAIN CURRENT (A)
PULSE DURATION = 80
s
T
J
= 150
o
C
T
J
= 25
o
C
15
10
5
0
0
20
40
Q
g(TOT)
, TOTAL GATE CHARGE (nC)
V
GS
, GA
TE T
O
SOURCE V
O
L
T
A
GE (V)
I
D
= 14.4A
V
DS
= 100V
V
DS
= 400V
60
80
100
120
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
0.3
F
12V
BATTERY
50k
V
DS
S
DUT
D
G
I
g(REF)
0
(ISOLATED
V
DS
0.2
F
CURRENT
REGULATOR
I
D
CURRENT
SAMPLING
I
G
CURRENT
SAMPLING
SUPPLY)
RESISTOR
RESISTOR
SAME TYPE
AS DUT
Q
g(TOT)
Q
gd
Q
gs
V
DS
0
V
GS
V
DD
I
g(REF)
0
BUZ45B
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