01/99
B-35
IF3602
Dual N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings = T
A
at 25C
Reverse Gate Source Voltage & Gate Drain Voltage
20 V
Continuous Forward Gate Current
10 mA
Continuous Device Power Dissipation
300 mW
Power Derating
4 mW/C
Storage Temperature Range
65C to 200C
TO78 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Omitted,
5 Source, 6 Drain, 7 Gate, 8 Omitted
At 25C free air temperature:
IF3602
Process NJ3600L
Static Electrical Characteristics
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V
(BR)GSS
20
V
I
G
= 1 A, V
DS
= V
Gate Reverse Current
I
GSS
0.5
nA
V
GS
= 10V, V
DS
= V
Gate Source Cutoff Voltage
V
GS(OFF)
0.35
3
V
V
DS
= 10V, I
D
= 0.5 nA
Drain Saturation Current (Pulsed)
I
DSS
30
mA
V
DS
= 10V, V
GS
= V
Dynamic Electrical Characteristics
Typ
Common Source
g
fs
750
mS
V
DS
= 10V, V
GS
= V
f = 1 kHz
Forward Transconductance
Common Source Input Capacitance
C
iss
300
pF
V
DS
= V, V
GS
= 4V
f = 1 MHz
Common Source
C
rss
200
pF
V
DS
= V, V
GS
= 4V
f = 1 MHz
Reverse Transfer Capacitance
Equivalent Short Circuit
e
N
0.3
nV/
Hz
V
DG
= 3V, I
D
= 5 mA
f = 100 Hz
Input Noise Voltage
Max
Differential Gate Source Voltage
| V
GS1
V
GS2
|
100
mV
V
DS
= 10V, V
GS
= V
Low-Noise, High Gain Amplifier
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-35
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