01/99
B-29
IF142
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T
A
= 25C
Reverse Gate Source & Reverse Gate Drain Voltage
20 V
Continuous Forward Gate Current
10 mA
Continuous Device Power Dissipation
375 mW
Power Derating
3 mW/C
Storage Temperature Range
65C to 200C
TO236AB Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
At 25C free air temperature:
IF142
Process NJ14AL
Static Electrical Characteristics
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V
(BR)GSS
25
V
I
G
= 1 A, V
DS
= V
Gate Reverse Current
I
GSS
0.1
nA
V
GS
= 15V, V
DS
= V
0.2
nA
V
GS
= 15V, V
DS
= V
T
A
= 150C
Gate Source Cutoff Voltage
V
GS(OFF)
6
V
V
DS
= 15V, I
D
= 5 nA
Gate Source Voltage
V
GS
5
V
V
DS
= 15V, I
D
= 50 A
Gate Source Forward Voltage
V
GS(F)
1
V
V
DS
= , I
G
= 1 mA
Drain Saturation Current (Pulsed)
I
DSS
5
15
mA
V
DS
= 15V, V
GS
= V
Dynamic Electrical Characteristics
Common Source
Y
fs
3.5
mS
V
DS
= 15V, V
GS
= V
f = 1 kHz
Forward Transmittance
Common Source
Y
os
0.05
S
V
DS
= 15V, V
GS
= V
f = 1 kHz
Output Conductance
Common Source Input Capacitance
C
iss
3
pF
V
DS
= 15V, V
GS
= V
f = 1 MHz
Common Source
C
rss
0.6
pF
V
DS
= 15V, V
GS
= V
f = 1 MHz
Reverse Transfer Capacitance
Typ
Equivalent Short Circuit
e
N
4
nV/
Hz
V
DS
= 12V, V
GS
= V
f = 10 Hz
Input Noise Voltage
Low-Noise, High Gain Amplifier
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
Databook.fxp 1/14/99 1:50 PM Page B-29
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