B-28
01/99
IF140, IF140A
N-Channel Silicon Junction Field-Effect Transistor
Low-Noise, High Gain
Amplifiers
Absolute maximum ratings at T
A
= 25C
Reverse Gate Source & Reverse Gate Drain Voltage
20 V
Continuous Forward Gate Current
10 mA
Continuous Device Power Dissipation
375 mW
Power Derating
3 mW/C
Storage Temperature Range
65C to 200C
TO72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
At 25C free air temperature:
IF140
IF140A
Process NJ14AL
Static Electrical Characteristics
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V
(BR)GSS
20
20
V
I
G
= 1 A, V
DS
= V
Gate Reverse Current
I
GSS
0.1
0.1
nA
V
GS
= 15V, V
DS
= V
0.2
0.2
nA
V
GS
= 15V, V
DS
= V
T
A
= 150C
Gate Source Cutoff Voltage
V
GS(OFF)
6
6
V
V
DS
= 15V, I
D
= 5 nA
Gate Source Voltage
V
GS
5
2.5
6
V
V
DS
= 15V, I
D
= 50 A
Gate Source Forward Voltage
V
GS(F)
1
1
V
V
DS
= , I
G
= 1 mA
Drain Saturation Current (Pulsed)
I
DSS
5
15
5
15
mA
V
DS
= 15V, V
GS
= V
Dynamic Electrical Characteristics
Common Source Forward Transmittance Y
fs
4.5
4.5
mS
V
DS
= 15V, V
GS
= V
f = 1 kHz
Common Source Output Conductance
Y
os
0.05
0.05
S
V
DS
= 15V, V
GS
= V
f = 1 kHz
Common Source Input Capacitance
C
iss
3
3
pF
V
DS
= 15V, V
GS
= V
f = 1 MHz
Common Source Reverse
C
rss
0.6
0.6
pF
V
DS
= 15V, V
GS
= V
f = 1 MHz
Transfer Capacitance
Typ
Typ
Equivalent Short Circuit
e
N
4
4
nV/
Hz
V
DS
= 12V, V
GS
= V
f = 10 Hz
Input Noise Voltage
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-28
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