01/99
B-27
2N6550
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T
A
=25C
Reverse Gate Source & Reverse Gate Drain Voltage
20 V
Continuious Forward Gate Current
50 mA
Continuous Device Power Dissipation
400 mW
Power Derating
2.3 mW/C
Junction Temperature (Operating & Storage)
65C to +200C
TO46 Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate & Case
At 25C free air temperature:
2N6550
Process NJ450L
Static Electrical Characteristics
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V
(BR)GSS
20
V
I
G
= 10 A, V
DS
= V
Gate Leakage Current
I
GSS
3
nA
V
GS
= 10V, V
DS
= V
0.1
A
V
GS
= 10V, V
DS
= V
T
A
= 85C
Zero Gate Voltage Drain Current (Pulsed)
I
DSS
10
100
250
mA
V
DS
= 10V, V
GS
= V
Gate Source Cutoff Voltage
V
GS(OFF)
0.3
3
V
V
DS
= 10V, I
D
= 0.1 mA
Dynamic Electrical Characteristics
Transconductance
g
fs
25
150
mS
V
DS
= 10V, I
D
= 10 mA
f = 1 kHz
Common Source Output Conductance
|Y
os
|
150
S
V
DS
= 10V, I
D
= 10 mA
f = 1 kHz
Common Source Input Capacitance
C
iss
30
35
pF
V
DS
= 10V, I
D
= 10 mA
f = 140 kHz
Common Source Reverse Transfer Capacitance
C
rss
10
20
pF
V
DS
= 10V, V
DS
= V
f = 140 kHz
1.4
2
nV/
Hz
V
DS
= 5V, I
D
= 10 mA
f = 1 kHz
Equivalent Short Circuit
e
N
6
10
nV/
Hz
V
DS
= 5V, I
D
= 10 mA
f = 10 Hz
Input Noise Voltage
e
N
Total
0.4
0.6
Vrms
V
DS
= 5V, I
D
= 10 mA
f = 10 kHz
to 20 kHz
Equivalent Open Circuit Input Noise Current
i
N
0.1
pA/
Hz
R
S
< 100 K
f = 1 kHz
Low-Noise, High Gain Amplifier
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-27
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