PROFET Data Sheet BTS550P
Infineon Technologies AG 1 of 15
2003-Oct-01
Smart Highside High Current Power Switch
Reversave
Reverse battery protection by self turn on of
power MOSFET
Features
Overload protection
Current limitation
Short circuit protection
Overtemperature protection
Overvoltage protection (including load dump)
Clamp of negative voltage at output
Fast deenergizing of inductive loads
1)
Low ohmic inverse current operation
Diagnostic feedback with load current sense
Open load detection via current sense
Loss of V
bb
protection
2)
Electrostatic discharge (ESD) protection
Application
Power switch with current sense diagnostic
feedback for 12
V and 24
V DC grounded loads
Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and
inductive loads
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS
chip on chip technology. Providing embedded protective functions.
IN
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
2
Overvoltage
protection
+ Vbb
PROFET
OUT
3 & Tab
1, 5
Load GND
Load
Output
Voltage
detection
R
IS
IS
4
I
IS
I
L
V
IS
I
IN
Logic GND
Voltage
sensor
Voltage
source
Current
Sense
Logic
ESD
Temperature
sensor
R bb
V
IN
1
) With additional external diode.
2)
Additional external diode required for energized inductive loads (see page 9).
Product Summary
Overvoltage protection
V
bb(AZ)
62
V
Output clamp
V
ON(CL)
44
V
Operating voltage
V
bb(on)
5.0
...
34
V
On-state resistance
R
ON
3.6
m
Load current (ISO)
I
L(ISO)
115
A
Short circuit current limitation
I
L(SC)
220
A
Current sense ratio
I
L :
I
IS
21000
TO-218AB/5
5
1
Straight leads
Data Sheet BTS550P
Infineon Technologies AG
2
2003-Oct-01
Pin Symbol
Function
1 OUT
O
Output to the load. The pins
1 and 5 must be shorted with each other
especially in high current applications!
3)
2
IN
I
Input, activates the power switch in case of short to ground
3 Vbb
+
Positive power supply voltage, the tab is electrically connected to this pin.
In high current applications the tab should be used for the V
bb
connection
instead of this pin
4)
.
4 IS
S
Diagnostic feedback providing a sense current proportional to the load
current; zero current on failure (see Truth Table on page 7)
5 OUT
O
Output to the load. The pins
1 and 5 must be shorted with each other
especially in high current applications!
3)
Maximum Ratings at T
j
= 25 C unless otherwise specified
Parameter Symbol
Values
Unit
Supply voltage (overvoltage protection see page 4)
V
bb
40
V
Supply voltage for short circuit protection,
T
j,start
=-40 ...+150C:
(E
AS
limitation see diagram on page 9)
V
bb
34
V
Load current (short circuit current, see page 5)
I
L
self-limited
A
Load dump protection V
LoadDump
=
U
A
+
V
s
, U
A
=
13.5
V
R
I
5
)
=
2
, R
L
=
0.54
, t
d
=
200
ms,
IN,
IS
= open or grounded
V
Load dump
6
)
80
V
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
C
Power dissipation (DC), T
C
25 C
P
tot
360
W
Inductive load switch-off energy dissipation, single pulse
V
bb
=
12V, T
j,start
=
150C, T
C
=
150C const.,
I
L
=
20
A, Z
L
=
15
mH, 0
,
see diagrams on page 10
E
AS
3
J
Electrostatic discharge capability (ESD)
Human Body Model acc. MIL-STD883D, method 3015.7 and ESD
assn. std. S5.1-1993, C = 100 pF, R = 1.5 k
V
ESD
4
kV
Current through input pin (DC)
Current through current sense status pin (DC)
see internal circuit diagrams on page 8
I
IN
I
IS
+15
, -250
+15
, -250
mA
3)
Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability
and decrease the current sense accuracy
4)
Otherwise add up to 0.5 m
(depending on used length of the pin) to the R
ON
if the pin is used instead of the
tab.
5)
R
I
= internal resistance of the load dump test pulse generator.
6)
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.
Data Sheet BTS550P
Infineon Technologies AG
3
2003-Oct-01
Thermal Characteristics
Parameter and Conditions Symbol
Values
Unit
min typ
max
Thermal resistance
chip - case
:
R
thJC
7
)
-- --
0.35
K/W
Junction - ambient (free air):
R
thJA
--
30 --
Electrical Characteristics
Parameter and Conditions Symbol
Values
Unit
at T
j
=
-40 ... +150
C, V
bb
=
12
V unless otherwise specified
min typ
max
Load Switching Capabilities and Characteristics
On-state resistance
(Tab to pins 1,5, see measurement
circuit page 8)
I
L
=
20
A, T
j
=
25
C:
V
IN
=
0, I
L
=
20
A
,
T
j
=
150
C:
R
ON
--
2.8
5.0
3.6
6.5
m
I
L
=
120
A
,
T
j
=
150
C:
--
6.5
V
bb
=
6V
8
)
, I
L
=
20
A
,
T
j
=
150
C: R
ON(Static)
-- 7
10
Nominal load current
9
)
(Tab to pins 1,5)
ISO 10483-1/6.7: V
ON
=
0.5
V, Tc =
85
C
10
)
I
L(ISO)
90
115
--
A
Maximum load current in resistive range
(Tab to pins 1,5)
V
ON
=
1.8
V, Tc =
25
C:
see diagram on page 12
V
ON
=
1.8
V, Tc =
150
C:
I
L(Max)
390
215
--
--
--
--
A
Turn-on time
11
)
IIN
to 90% V
OUT
:
Turn-off time
IIN
to 10% V
OUT
:
R
L
=
1
,
T
j
=-40...+150C
t
on
t
off
120
40
250
90
600
150
s
Slew rate on
11)
(10 to 30% V
OUT
)
R
L
=
1
,T
j
=25C
dV/dt
on
0.2 0.5 0.8
V/
s
Slew rate off
11)
(70 to 40% V
OUT
)
R
L
=
1
,T
j
=25C
-dV/dt
off
0.2
0.6 1
V/
s
7)
Thermal resistance R
thCH
case to heatsink (about 0.25 K/W with silicone paste) not included!
8
) Decrease of V
bb
below 10 V causes a slowly a dynamic increase of R
ON
to a higher value of R
ON(Static)
. As
long as V
bIN
> V
bIN(u) max
, R
ON
increase is less than 10 % per second for T
J
< 85 C.
9)
not subject to production test, specified by design
10)
T
J
is about 105C under these conditions.
11
) See timing diagram on page 13.
Data Sheet BTS550P
Parameter and Conditions Symbol
Values
Unit
at T
j
=
-40 ... +150
C, V
bb
=
12
V unless otherwise specified
min typ
max
Infineon Technologies AG
4
2003-Oct-01
Inverse Load Current Operation
On-state resistance
(Pins 1,5 to pin 3)
V
bIN
=
12 V, I
L
=
-
20
A
T
j
=
25
C:
see diagram on page 10
T
j
=
150
C:
R
ON(inv)
--
2.8
5.0
3.6
6.5
m
Nominal inverse load current
(Pins 1,5 to Tab)
V
ON
=
-0.5
V, Tc =
85
C
10
I
L(inv)
90
115
--
A
Drain-source diode voltage
(V
out
> V
bb
)
I
L
=
-
20
A, I
IN
= 0, T
j
=
+150C
-V
ON
-- 0.6 0.7
V
Operating Parameters
Operating voltage (V
IN
=
0)
8, 12
)
V
bb(on)
5.0
--
34
V
Undervoltage shutdown
13
)
V
bIN(u)
1.5 3.0 4.5
V
Undervoltage start of charge pump
see diagram page
14
V
bIN(ucp)
3.0
4.5 6.0
V
Overvoltage protection
14
)
T
j
=-40C:
I
bb
=
15
mA
T
j
=
25...+150C:
V
bIN(Z)
60
62
--
64
--
--
V
Standby current
T
j
=-40...+25C:
I
IN
=
0
T
j
=
150C:
I
bb(off)
--
--
15
25
25
50
A
12
) If the device is turned on before a V
bb
-decrease, the operating voltage range is extended down to V
bIN(u)
.
For the voltage range 0..34 V the device is fully protected against overtemperature and short circuit.
13
) V
bIN
= V
bb
-
V
IN
see diagram on page 8. When V
bIN
increases from less than V
bIN(u)
up to V
bIN(ucp)
= 5
V
(typ.) the charge pump is not active and V
OUT
V
bb
-
3
V.
14)
See also V
ON(CL)
in circuit diagram on page 9.
Data Sheet BTS550P
Parameter and Conditions Symbol
Values
Unit
at T
j
=
-40 ... +150
C, V
bb
=
12
V unless otherwise specified
min typ
max
Infineon Technologies AG
5
2003-Oct-01
Protection Functions
15
)
Short circuit current limit
(Tab to pins 1,5)
16
V
ON
=
12
V, time until shutdown max. 350
s
T
c
=-40C:
T
c
=25C:
T
c
=+150C:
I
L(SCp)
100
110
120
190
220
210
350
330
310
A
Short circuit shutdown delay after input current
positive slope, V
ON
> V
ON(SC)
min. value valid only if input "off-signal" time exceeds 30
s
t
d(SC)
80
-- 350
s
Output clamp
17
)
I
L
= 40 mA:
(inductive load switch off)
-V
OUT(CL)
14
17
20
V
Output clamp (inductive load switch off)
at V
OUT
= V
bb
- V
ON(CL)
(e.g. overvoltage)
I
L
= 40 mA
V
ON(CL)
40
44 47
V
Short circuit shutdown detection voltage
(pin 3 to pins 1,5)
V
ON(SC)
--
6
--
V
Thermal overload trip temperature
T
jt
150 -- --
C
Thermal hysteresis
T
jt
-- 10 --
K
Reverse Battery
Reverse battery voltage
18
)
-V
bb
--
--
32
V
On-state resistance
(Pins 1,5 to pin 3)
T
j
=
25
C:
V
bb
=
-12V,
V
IN
=
0,
I
L
=
-
20
A,
R
IS
=
1
k
T
j
=
150
C:
R
ON(rev)
--
3.4
--
4.3
7.5
m
Integrated resistor in V
bb
line T
j
=25C:
T
j
=150C:
R
bb
90
105
110
125
135
150
15
) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
16
) Short circuit is a failure mode. The device is not designed to operate continuously into a short circuit by
permanent resetting the short circuit latch function. The lifetime will be reduced under such conditions.
17
) This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode
is used, V
OUT
is clamped to V
bb
- V
ON(CL)
at inductive load switch off.
18
) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as
it is done with all polarity symmetric loads). Note that under off-conditions (I
IN
=
I
IS
=
0) the power transistor
is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic
drain-source diode. The temperature protection is not active during reverse current operation! Increasing
reverse battery voltage capability is simply possible as described on page 9.
Data Sheet BTS550P
Parameter and Conditions Symbol
Values
Unit
at T
j
=
-40 ... +150
C, V
bb
=
12
V unless otherwise specified
min typ
max
Infineon Technologies AG
6
2003-Oct-01
Diagnostic Characteristics
Current sense ratio,
I
L
=
120
A,T
j
=-40C:
static on-condition,
T
j
=25C:
k
ILIS
=
I
L
:
I
IS
,
T
j
=150C:
V
ON
<
1.5
V
19)
,
I
L
=
20
A,T
j
=-40C:
V
IS
<V
OUT
-
5 v,
T
j
=25C:
V
bIN
>
4.0
V
T
j
=150C:
see diagram on page 11
I
L
=
12
A,T
j
=-40C:
T
j
=25C:
T
j
=150C:
I
L
=
6
A,T
j
=-40C:
T
j
=25C:
T
j
=150C:
k
ILIS
19 000
19 000
18 000
18 500
18 500
18 000
16 000
17 000
17 500
12 000
14 000
16 000
20 600
20 500
19 000
22 300
21 400
19 500
23 500
22 000
19 900
28 000
24 000
20 500
23 000
22 500
21 500
26 000
25 000
23 000
30 000
26 500
24 500
46 000
34 000
30 000
I
IS
=0
by
I
IN
=0
(e.g. during deenergizing of inductive loads)
:
Sense current saturation
I
IS,lim
6.5 -- --
mA
Current sense leakage current
I
IN
=
0:
V
IN
=
0, I
L
0:
I
IS(LL)
I
IS(LH)
--
--
--
2
0.5
--
A
Current sense settling time
20
)
t
s(IS)
-- --
500
s
Overvoltage protection
T
j
=-40C:
I
bb
=
15
mA
T
j
=
25...+150C:
V
bIS(Z)
60
62
--
64
--
--
V
Input
Input and operating current (see diagram page 12)
IN grounded (V
IN
=
0)
I
IN(on)
--
0.8 1.5
mA
Input current for turn-off
21)
I
IN(off)
-- --
80
A
19)
If V
ON
is higher, the sense current is no longer proportional to the load current due to sense current
saturation, see
I
IS,lim
.
20
) not subject to production test, specified by design
21
) We recommend the resistance between IN and GND to be less than 0.5
k
for turn-on and more than
500
k
for turn-off. Consider that when the device is switched off (I
IN
=
0) the voltage between IN and GND
reaches almost V
bb
.
Data Sheet BTS550P
Infineon Technologies AG
7
2003-Oct-01
Truth Table
Input
current
Output Current
Sense
Remark
level
level IIS
Normal
operation
L
H
L
H
0
nominal
=I
L
/ k
ilis
, up to I
IS
=I
IS,lim
Very high
load current
H H I
IS, lim
up to V
ON
=V
ON(Fold back)
I
IS
no longer proportional to I
L
Current-
limitation
H H
0
V
ON
> V
ON(Fold back)
if V
ON
>V
ON(SC)
, shutdown will occure
Short circuit to
GND
L
H
L
L
0
0
Over-
temperature
L
H
L
L
0
0
Short circuit to
V
bb
L
H
H
H
0
<nominal
22)
Open load
L
H
Z
23)
H
0
0
Negative output
voltage clamp
L L
0
Inverse load
current
L
H
H
H
0
0
L = "Low" Level
H = "High" Level
Options Overview
Type BTS
6510P
550P
650P
555
Overtemperature protection with hysteresis
X X X
Tj >150 C, latch function
24
)
Tj >150 C, with auto-restart on cooling
X
X
X
Short circuit to GND protection
with overtemperature shutdown
switches off when V
ON
>6 V typ.
(when first turned on after approx. 180
s)
X
X
X
Overvoltage shutdown
- - -
Output negative voltage transient limit
to V
bb
- V
ON(CL)
X
X
X
to V
OUT
= -19 V typ
X
25)
X
25
)
X
25)
Overtemperature reset by cooling: Tj < Tjt (see diagram on page 14)
Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 13)
22
) Low ohmic short to V
bb
may reduce the output current I
L
and can thus be detected via the sense current I
IS
.
23
) Power Transistor "OFF", potential defined by external impedance.
24
) Latch except when V
bb
-V
OUT
< V
ON(SC)
after shutdown. In most cases V
OUT
= 0 V after shutdown (V
OUT
0 V only if forced externally). So the device remains latched unless V
bb
< V
ON(SC)
(see page 5). No latch
between turn on and t
d(SC)
.
25
) Can be "switched off" by using a diode D
S
(see page 8) or leaving open the current sense output.
Data Sheet BTS550P
Infineon Technologies AG
8
2003-Oct-01
Terms
PROFET
V
IN
IS
OUT
bb
V
IN
I
IS
I
IN
V
bb
Ibb
IL
V
OUT
V
ON
2
4
3
1,5
R
IS
V
IS
V
bIN
R
IN
D
S
V
bIS
Two or more devices can easily be connected in
parallel to increase load current capability.
R
ON
measurement layout
Sense
V force contacts
Out Force
bb
contacts
5.5 mm
contacts
(both out
pins parallel)
Input circuit (ESD protection)
IN
ZD
IN
I
V bb
Rbb
V
Z,IN
V bIN
V IN
When the device is switched off (I
IN
=
0) the
voltage between IN and GND reaches almost V
bb
.
Use a mechanical switch, a bipolar or MOS
transistor with appropriate breakdown voltage as
driver. V
Z,IN
=
64
V
(typ).
Current sense status output
IS
IS
R
IS
I
ZD
IS
V
bb
V
bb
R
Z,IS
V
V
Z,IS
=
64
V
(typ.), R
IS
=
1
k
nominal (or 1
k
/n, if
n devices are connected in parallel). I
S
= I
L
/k
ilis
can
be driven only by the internal circuit as long as V
out
-
V
IS
>
5 V. If you want to measure load currents up
to I
L(M)
, R
IS
should be less than
V
bb
- 5 V
I
L(M)
/ K
ilis
.
Note: For large values of R
IS
the voltage V
IS
can
reach almost V
bb
. See also overvoltage protection.
If you don't use the current sense output in your
application, you can leave it open.
Short circuit detection
Fault Condition: V
ON
> V
ON(SC)
(6
V typ.) and t> t
d(SC)
(80 ...350 s).
Short circuit
detection
Logic
unit
+ Vbb
OUT
V
ON
Inductive and overvoltage output clamp
+ V
bb
OUT
PROFET
V
Z1
V
ON
D
S
IS
V
OUT
V
ZG
V
ON
is clamped to V
ON(Cl)
=
42
V typ. At inductive
load switch-off without D
S
, V
OUT
is clamped to
Data Sheet BTS550P
Infineon Technologies AG
9
2003-Oct-01
V
OUT(CL)
= -19
V typ. via V
ZG
. With D
S
, V
OUT
is
clamped to V
bb
- V
ON(CL)
via V
Z1
. Using D
S
gives
faster deenergizing of the inductive load, but higher
peak power dissipation in the PROFET. In case of a
floating ground with a potential higher than 19V
referring to the OUT potential the device will
switch on, if diode DS is not used.
Overvoltage protection of logic part
+ V
bb
V
OUT
IN
bb
R
Signal GND
Logic
PROFET
V
Z,IS
R
IS
IN
R
IS
V
Z,IN
R
V
V
Z,VIS
R
bb
=
120
typ
.
,
V
Z,IN
= V
Z,IS
=
64
V
typ.,
R
IS
=
1
k
nominal. Note that when overvoltage exceeds 69
V
typ. a voltage above 5V can occur between IS and
GND, if R
V
, V
Z,VIS
are not used.
Reverse battery protection
Logic
IS
IN
IS
R
V
R
OUT
L
R
Power GND
Signal GND
Vbb
-
Power
Transistor
IN
R
bb
R
D
S
D
R
V
1
k
,
R
IS
=
1
k
nominal. Add
R
IN
for reverse
battery protection in applications with
V
bb
above
16
V
18)
; recommended value:
1
R
IN
+
1
R
IS
+
1
R
V
=
0.1A
|V
bb
| - 12V
if D
S
is not used (or
1
R
IN
=
0.1A
|V
bb
| - 12V
if
D
S
is used).
To minimize power dissipation at reverse battery
operation, the summarized current into the IN and
IS pin should be about 120mA. The current can be
provided by using a small signal diode D in parallel
to the input switch, by using a MOSFET input switch
or by proper adjusting the current through R
IS
and
R
V
.
V
bb
disconnect with energized
inductive load
Provide a current path with load current capability
by using a diode, a Z-diode, or a varistor. (V
ZL
<
72
V or V
Zb
<
30 V if R
IN
=0). For higher clamp voltages
currents at IN and IS have to be limited to
250 mA.
Version a:
PROFET
V
IN
OUT
IS
bb
V
bb
V
ZL
Version b:
PROFET
V
IN
OUT
IS
bb
V
bb
V
Zb
Note that there is no reverse battery protection
when using a diode without additional Z-diode V
ZL
,
V
Zb
.
Version c: Sometimes a neccessary voltage clamp
is given by non inductive loads R
L
connected to the
same switch and eliminates the need of clamping
circuit:
PROFET
V
IN
OUT
IS
bb
V
bb
R
L
Data Sheet BTS550P
Infineon Technologies AG
10
2003-Oct-01
Inverse load current operation
PROFET
V
IN
OUT
IS
bb
V
bb
V
OUT
- I
L
R
IS
V
IS
V
IN
+
-
+
-
I
IS
The device is specified for inverse load current
operation (V
OUT
> V
bb
> 0V). The current sense
feature is not available during this kind of operation
(I
IS
= 0). With I
IN
= 0 (e.g. input open) only the intrin-
sic drain source diode is conducting resulting in
considerably increased power dissipation. If the
device is switched on (V
IN
= 0), this power
dissipation is decreased to the much lower value
R
ON(INV)
* I
2
(specifications see page 4).
Note: Temperature protection during inverse load
current operation is not possible!
Inductive load switch-off energy
dissipation
PROFET
V
IN
OUT
IS
bb
E
E
E
EAS
bb
L
R
ELoad
L
RL
{
Z L
RIS
I
IN
Vbb
i (t)
L
Energy stored in load inductance:
E
L
=
1/2
L
I
2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
E
AS
= E
bb
+ E
L
- E
R
=
V
ON(CL)
i
L
(t) dt,
with an approximate solution for RL
>
0
:
E
AS
=
I
L
L
2
R
L
(
V
bb
+
|V
OUT(CL)
|)
ln
(1+
I
L
R
L
|V
OUT(CL)
|
)
Maximum allowable load inductance for
a single switch off
L = f (IL );
Tj,start =
150C, Vbb =
12
V, RL =
0
L [H]
IL [A]
Externally adjustable current limit
If the device is conducting, the sense current can be
used to reduce the short circuit current and allow
higher lead inductance (see diagram above). The
device will be turned off, if the threshold voltage of
T2 is reached by I
S
*R
IS
. After a delay time defined
by R
V
*C
V
T1 will be reset. The device is turned on
again, the short circuit current is defined by I
L(SC)
and the device is shut down after t
d(SC)
with latch
function.
PROFET
IS
IN
IS
R
V
R
Power
GND
Signal
GND
Vbb
OUT
V
C
load
R
T1
T2
IN
Signal
Vbb
1
10
100
1000
10000
100000
1
10
100
1000
Data Sheet BTS550P
Infineon Technologies AG
11
2003-Oct-01
Characteristics
Current sense versus load current:
I
IS
= f(I
L
)
I
IS
[mA]
I
L
[A]
Current sense ratio:
K
ILIS
= f(I
L
), T
J
= -40 C
K
ilis
I
L
[A]
Current sense ratio:
K
ILIS
= f(I
L
), T
J
= 25 C
k
ilis
I
L
[A]
Current sense ratio:
K
ILIS
= f(I
L
), T
J
= 150 C
K
ilis
I
L
[A]
0
1
2
3
4
5
6
7
0
20
40
60
80
100
120
max
min
12000
14000
16000
18000
20000
22000
24000
26000
28000
30000
32000
34000
36000
38000
40000
42000
44000
46000
0
20
40
60
80
100
120
min
typ
max
16000
18000
20000
22000
24000
26000
28000
30000
32000
34000
0
20
40
60
80
100
120
min
typ
max
16000
18000
20000
22000
24000
26000
28000
30000
0
20
40
60
80
100
120
typ
min
max
Data Sheet BTS550P
Infineon Technologies AG
12
2003-Oct-01
Typ. current limitation characteristic
I
L
= f (V
ON
, T
j
)
I
L
[A]
V
ON
[V]
In case of V
ON
> V
ON(SC)
(typ. 6 V) the device will be
switched off by internal short circuit detection.
Typ. on-state resistance
R
ON
= f (V
bb
, T
j
)
; I
L
= 20
A; V
IN
= 0
R
ON
[mOhm]
V
bb
[V]
Typ. input current
I
IN
= f (V
bIN
), V
bIN =
V
bb
- V
IN
I
IN
[mA]
V
bIN
[V]
0
1
2
3
4
5
6
7
8
9
10
0
5
10
15
20
static
dynamic
T
j
= 150C
85C
25C
-40C
40
0
100
200
300
400
500
600
700
800
0
5
10
15
20
V
ON
>
V
ON(SC
)
only
for
t
<
t
d(SC)
(otherwise immediate shutdown)
T
J
= -40C
T
J
=
25C
T
J
= 150C
V
ON(FB)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
Data Sheet BTS550P
Infineon Technologies AG
13
2003-Oct-01
Timing diagrams
Figure 1a: Switching a resistive load,
change of load current in on-condition:
I
IN
t
V
OUT
I
L
I
IS
t
son(IS)
t
t
slc(IS)
Load 1
Load 2
soff(IS)
t
t
t
on
off
slc(IS)
90%
dV/dton
dV/dtoff
10%
The sense signal is not valid during a settling time
after turn-on/off and after change of load current.
Figure 2a: Switching motors and lamps:
I
IN
t
V
OUT
I
IL
I
IS
Sense current saturation can occur at very high
inrush currents (see I
IS,lim
on page 6).
Figure 2b: Switching an inductive load:
I
IN
t
V
OUT
I
L
I
IS
Figure 3a: Short circuit:
shut down by short circuit detection, reset by I
IN
=
0.
I
IN
I
L
I
L(SCp)
I
IS
t
t
d(SC)
V
OUT
=0
V
OUT
>>0
Shut down remains latched until next reset via input.
Data Sheet BTS550P
Infineon Technologies AG
14
2003-Oct-01
Figure 4a: Overtemperature
Reset if T
j
<T
jt
I
IN
t
I
IS
V
OUT
T
j
Auto Restart
Figure 6a: Undervoltage restart of charge pump,
overvoltage clamp
0
2
4
6
0
4
V
OUT
V
bIN(ucp)
V
IN
= 0
I
IN
= 0
V
ON(CL)
V
bIN(u)
V
bIN(u)
dynamic, short
Undervoltage
not below
V
ON
(C
L
)
V
bb
Data Sheet BTS550P
Infineon Technologies AG
15
2003-Oct-01
Package and Ordering Code
All dimensions in mm
TO-218AB/5 Option E3146
Ordering code
E3146
Q67060-S6952A3
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 Mnchen
Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain
components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not
limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and
conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon
Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies
Office.
Infineon Technologies Components may only be used in life-
support devices or systems with the express written
approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the
failure of that life-support device or system, or to affect the
safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the
human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be
endangered.
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