SIGC54T60R3
Edited by INFINEON Technologies AI PS DD CLS, L7581A, Edition 1, 09.06.2004
IGBT
3
Chip
This chip is used for:
power module
FEATURES:
600V Trench & Field Stop technology
low V
CE(sat)
low turn-off losses
short tail current
positive temperature coefficient
easy paralleling
Applications:
drives
G
C
E
Chip Type
V
CE
I
Cn
Die Size
Package
Ordering Code
SIGC54T60R3
600V 100A
5.97 x 8.97 mm
2
sawn on foil
Q67050-
A4341-A101
MECHANICAL PARAMETER:
Raster size
5.97 x 8.97
Emitter pad size
( 2.489 x 1.767 ) x 4
( 2.789 x 1.995 ) x 4
Gate pad size
1.615 x 0.817
mm
2
Area total / active
53.6 / 40
mm
2
Thickness
70
m
Wafer size
150
mm
Flat position
90
deg
Max. possible chips per wafer
245 pcs
Passivation frontside
Photoimide
Emitter metallization
3200 nm AlSiCu
Collector metallization
1400 nm Ni Ag system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al, <500m
Reject ink dot size
0.65mm ; max 1.2mm
Recommended storage environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23C
SIGC54T60R3
Edited by INFINEON Technologies AI PS DD CLS, L7581A, Edition 1, 09.06.2004
MAXIMUM RATINGS:
Parameter
Symbol
Value
Unit
Collector-emitter voltage, Tj=25
C
V
C E
600
V
DC collector current, limited by T
jmax
I
C
1 )
A
Pulsed collector current, t
p
limited by T
jmax
I
c p u l s
300
A
Gate emitter voltage
V
GE
20
V
Operating junction and storage temperature
T
j
, T
s t g
-40 ... +175
C
SC data, V
GE
= 15V, V
CC
= 360V, Tvj = 150C
tp
5
s
1 )
depending on thermal properties of assembly
STATIC CHARACTERISTICS (tested on chip), Tj=25
C, unless otherwise specified
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
=0V , I
C
= 4mA
600
Collector-emitter saturation voltage
V
CE(sat)
V
GE
=15V, I
C
=100A
1.05
1.45
1.85
Gate-emitter threshold voltage
V
GE(th)
I
C
=1600A , V
GE
=V
CE
tbd
5.8
tbd
V
Zero gate voltage collector current
I
CES
V
CE
=600V , V
GE
=0V
270
A
Gate-emitter leakage current
I
GES
V
CE
=0V , V
GE
=20V
600
nA
Integrated gate resistor
R
Gint
2
ELECTRICAL CHARACTERISTICS (verified by design/characterization):
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
Input capacitance
C
i s s
tbd
Output capacitance
C
o s s
tbd
Reverse transfer capacitance
C
r s s
V
C E
=25V,
V
GE
= 0 V ,
f=1MHz
tbd
nF
SWITCHING CHARACTERISTICS (verified by design/characterization), inductive load
Value
2)
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
Turn-on delay time
t
d(on)
tbd
Rise time
t
r
tbd
Turn-off delay time
t
d ( o f f )
tbd
Fall time
t
f
T
j
= 1 2 5
C
V
C C
= 300V,
I
C
=100A,
V
GE
=- 1 5 / 1 5 V ,
R
G
= t b d
tbd
ns
2)
values also influenced by parasitic L- and C- in measurement and package.
SIGC54T60R3
Edited by INFINEON Technologies AI PS DD CLS, L7581A, Edition 1, 09.06.2004
CHIP DRAWING:
SIGC54T60R3
Edited by INFINEON Technologies AI PS DD CLS, L7581A, Edition 1, 09.06.2004
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
tbd
DESCRIPTION:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prffeld
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 2004
All Rights Reserved.
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characteristics.
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
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Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
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written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
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and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
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