BSS126
SIPMOS
Small-Signal-Transistor
Features
N-channel
Depletion mode
dv /dt rated
Available with V
GS(th)
indicator on reel
Pb-free lead plating; RoHS compliant
Maximum ratings, at T
j
=25 C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I
D
T
A
=25 C
0.021
A
T
A
=70 C
0.017
Pulsed drain current
I
D,pulse
T
A
=25 C
0.085
Reverse diode dv /dt
dv /dt
I
D
=0.016 A,
V
DS
=20 V,
di /dt =200 A/s,
T
j,max
=150 C
6
kV/s
Gate source voltage
V
GS
20
V
ESD sensitivity (HBM) as per
MIL-STD 883
Class 1
Power dissipation
P
tot
T
A
=25 C
0.50
W
Operating and storage temperature
T
j
, T
stg
-55 ... 150
C
IEC climatic category; DIN IEC 68-1
55/150/56
0)
also available in non Pb-free on request
1)
see table on next page and diagram 11
Value
V
DS
600
V
R
DS(on),max
700
I
DSS,min
0.007 A
Product Summary
PG-SOT-23
Type
Package
Ordering Code
Tape and Reel Information
Marking
BSS126
0)
PG-SOT-23 Q67042-S4300
E6327: 3000 pcs/reel
SHs
BSS126
0)
PG-SOT-23 Q67042-S4300
E6906: 3000 pcs/reel
sorted in V
GS(th)
bands
1)
SHs
Rev. 1.3
page 1
2006-06-14
BSS126
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance,
junction - ambient
R
thJA
minimal footprint
-
-
250
K/W
Electrical characteristics, at T
j
=25 C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=-5 V, I
D
=250 A
600
-
-
V
Gate threshold voltage
V
GS(th)
V
DS
=3 V, I
D
=8 A
-2.7
-2.0
-1.6
Drain-source cutoff current
I
D(off)
V
DS
=600 V,
V
GS
=-5 V, T
j
=25 C
-
-
0.1
A
V
DS
=600 V,
V
GS
=-5 V, T
j
=125 C
-
-
10
Gate-source leakage current
I
GSS
V
GS
=20 V, V
DS
=0 V
-
-
100
nA
On-state drain current
I
DSS
V
GS
=0 V, V
DS
=25 V
7
-
-
mA
Drain-source on-state resistance
R
DS(on)
V
GS
=0 V, I
D
=3 mA
-
320
700
V
GS
=10 V, I
D
=16 mA
-
280
500
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=0.01 A
0.008
0.017
-
S
Threshold voltage V
GS(th)
sorted in bands
2)
J
V
GS(th)
V
DS
=3 V, I
D
=8 A
-1.8
-
-1.6
V
K -1.95
-
-1.75
L -2.1
-
-1.9
M -2.25
-
-2.05
N -2.4
-
-2.2
2)
Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific
band cannot be ordered separately.
Values
Rev. 1.3
page 2
2006-06-14
BSS126
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
I
D
=f(V
GS
); V
DS
=3 V; T
j
=25 C
C
iss
-
21
28
pF
Output capacitance
C
oss
-
2.4
3.2
Reverse transfer capacitance
C
rss
-
1.0
1.5
Turn-on delay time
t
d(on)
-
6.1
9.2
ns
Rise time
t
r
-
9.7
14.5
Turn-off delay time
t
d(off)
-
14
21
Fall time
t
f
-
115
170
Gate Charge Characteristics
Gate to source charge
Q
gs
-
0.05
0.08
nC
Gate to drain charge
Q
gd
-
1.2
1.8
Gate charge total
Q
g
-
1.4
2.1
Gate plateau voltage
V
plateau
-
0.10
-
V
Reverse Diode
Diode continous forward current
I
S
-
-
0.016 A
Diode pulse current
I
S,pulse
-
-
0.064
Diode forward voltage
V
SD
V
GS
=-5 V, I
F
=16 mA,
T
j
=25 C
-
0.81
1.2
V
Reverse recovery time
t
rr
-
160
240
ns
Reverse recovery charge
Q
rr
-
13.2
19.8
nC
V
R
=300 V, I
F
=0.01 A,
di
F
/dt =100 A/s
T
A
=25 C
Values
V
GS
=-5 V, V
DS
=25 V,
f =1 MHz
V
DD
=300 V,
V
GS
=-3...7 V,
I
D
=0.01 A, R
G
=6
V
DD
=400 V,
I
D
=10 mA,
V
GS
=-3 to 5 V
Rev. 1.3
page 3
2006-06-14
BSS126
1 Power dissipation
2 Drain current
P
tot
=f(T
A
)
I
D
=f(T
A
); V
GS
10 V
3 Safe operating area
4 Max. transient thermal impedance
I
D
=f(V
GS
); V
DS
=3 V; T
j
=25 C
Z
thJA
=f(t
p
)
parameter: t
p
parameter: D =t
p
/T
10 s
100 s
1 ms
10 ms
DC
10
3
10
2
10
1
10
0
10
-1
10
-2
10
-3
10
-4
V
DS
[V]
I
D
[A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
2
10
1
10
0
10
-1
10
-2
10
-3
10
-4
10
3
10
2
10
1
t
p
[s]
Z
thJA
[K/W]
0
0.1
0.2
0.3
0.4
0.5
0.6
0
40
80
120
160
T
A
[C]
P
tot
[W]
0
0.005
0.01
0.015
0.02
0.025
0
40
80
120
160
T
A
[C]
I
D
[A]
Rev. 1.3
page 4
2006-06-14
BSS126
5 Typ. output characteristics
6 Typ. drain-source on resistance
I
D
=f(V
DS
); T
j
=25 C
R
DS(on)
=f(I
D
); T
j
=25 C
parameter: V
GS
parameter: V
GS
7 Typ. transfer characteristics
8 Typ. forward transconductance
I
D
=f(V
GS
); V
DS
=3 V; T
j
=25 C
g
fs
=f(I
D
); T
j
=25 C
-0.2 V
-0.1 V
0 V 0.1 V 0.2 V
0.5 V
1 V
10 V
0
100
200
300
400
500
600
700
800
900
1000
0
0.01
0.02
0.03
0.04
I
D
[A]
R
D
S
(on)
[
]
0
0.005
0.01
0.015
0.02
0.025
-2
-1
0
1
V
GS
[V]
I
D
[A]
0
0.005
0.01
0.015
0.02
0.025
0.000
0.005
0.010
0.015
0.020
I
D
[A]
g
fs
[S]
V 0.2-
V 0.1-
V 0
V 0.1
V 0.2
V 0.5
V 1
V 10
0
0.01
0.02
0.03
0.04
0
4
8
12
16
V
DS
[V]
I
D
[A]
Rev. 1.3
page 5
2006-06-14
BSS126
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)
=f(T
j
); I
D
= 0.016mA; V
GS
=0 V
V
GS(th)
=f(T
j
); V
DS
=3 V; I
D
= 8 A
parameter: I
D
11 Threshold voltage bands
12 Typ. capacitances
I
D
=f(V
GS
); V
DS
=3 V; T
j
=25 C
C =f(V
DS
); V
GS
=-3 V; f =1 MHz
8 A
J
K
L
M
N
0.001
0.01
0.1
-2.5
-2
-1.5
-1
V
GS
[V]
I
D
[m
A
]
typ
%98
0
200
400
600
800
1000
1200
1400
1600
-60
-20
20
60
100
140
180
T
j
[C]
R
D
S
(on)
[
]
typ
%98
%2
-3.5
-3
-2.5
-2
-1.5
-1
-60
-20
20
60
100
140
180
T
j
[C]
V
GS
(th)
[V]
Ciss
Coss
Crss
0.1
1
10
100
0
5
10
15
20
25
30
V
DS
[V]
C
[pF]
Rev. 1.3
page 6
2006-06-14
BSS126
13 Forward characteristics of reverse diode
15 Typ. gate charge
I
F
=f(V
SD
)
V
GS
=f(Q
gate
); I
D
=0.1 A pulsed
parameter: T
j
parameter: V
DD
16 Drain-source breakdown voltage
I
D
=f(V
GS
); V
DS
=3 V; T
j
=25 C
500
540
580
620
660
700
-60
-20
20
60
100
140
180
T
j
[C]
V
BR(
DSS)
[V]
0.2 VDS(max)
0.5 VDS(max)
0.8 VDS(max)
-4
-3
-2
-1
0
1
2
3
4
5
6
0
0.4
0.8
1.2
1.6
Q
gate
[nC]
V
GS
[V]
25 C
150 C
25 C, 98%
150 C, 98%
0.001
0.01
0.1
0
0.5
1
1.5
2
2.5
V
SD
[V]
I
F
[A]
Rev. 1.3
page 7
2006-06-14
BSS126
Package Outline:
Footprint:
Packaging:
Dimensions in mm
Rev. 1.3
page 8
2006-06-14
BSS126
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Strae 53
D-81451 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide
(see address list).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.3
page 9
2006-06-14
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