ChipFind - документация

Электронный компонент: Q67000-S105

Скачать:  PDF   ZIP
Data Sheet
1
05.99
SIPMOS
Small-Signal Transistor
N channel
Enhancement mode
Logic Level
V
GS(th)
= 0.8...2.0V
Pin 1
Pin 2
Pin 3
G
D
S
Type
V
DS
I
D
R
DS(on)
Package
Marking
BSS 295
50 V
1.4 A
0.3
TO-92
SS 295
Type
Ordering Code
Tape and Reel Information
BSS 295
Q67000-S238
E6288
BSS 295
Q67000-S105
E6325
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain source voltage
V
DS
50
V
Drain-gate voltage
R
GS
= 20 k
V
DGR
50
Gate source voltage
V
GS
20
ESD Sensitivity (HBM) as per MIL-STD 883
Class 1
Continuous drain current
T
A
= 24 C
I
D
1.4
A
DC drain current, pulsed
T
A
= 25 C
I
Dpuls
5.6
Power dissipation
T
A
= 25 C
P
tot
1
W
BSS 295
BSS 295
Data Sheet
2
05.99
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
T
j
-55 ... + 150
C
Storage temperature
T
stg
-55 ... + 150
Thermal resistance, chip to ambient air
1)
R
thJA
125
K/W
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
Electrical Characteristics,
at T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V, I
D
= 0.25 mA, T
j
= 25 C
V
(BR)DSS
50
-
-
V
Gate threshold voltage
V
GS=
V
DS,
I
D
= 1 mA
V
GS(th)
0.8
1.4
2
Zero gate voltage drain current
V
DS
= 50 V, V
GS
= 0 V, T
j
= 25 C
V
DS
= 50 V, V
GS
= 0 V, T
j
= 125 C
V
DS
= 30 V, V
GS
= 0 V, T
j
= 25 C
I
DSS
-
-
-
-
8
0.1
100
50
1
A
nA
Gate-source leakage current
V
GS
= 20 V, V
DS
= 0 V
I
GSS
-
10
100
nA
Drain-Source on-state resistance
V
GS
= 10 V, I
D
= 1.4 A
V
GS
= 4.5 V, I
D
= 1.4 A
R
DS(on)
-
-
0.45
0.25
0.5
0.3
BSS 295
Data Sheet
3
05.99
Electrical Characteristics,
at T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
V
DS
2
*
I
D *
R
DS(on)max,
I
D
= 1.4 A
g
fs
0.5
1.6
-
S
Input capacitance
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
C
iss
-
320
425
pF
Output capacitance
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
C
oss
-
110
170
Reverse transfer capacitance
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
C
rss
-
50
75
Turn-on delay time
V
DD
= 30 V, V
GS
= 10 V, I
D
= 0.29 A
R
G
= 50
t
d(on)
-
8
12
ns
Rise time
V
DD
= 30 V, V
GS
= 10 V, I
D
= 0.29 A
R
G
= 50
t
r
-
20
30
Turn-off delay time
V
DD
= 30 V, V
GS
= 10 V, I
D
= 0.29 A
R
G
= 50
t
d(off)
-
120
160
Fall time
V
DD
= 30 V, V
GS
= 10 V, I
D
= 0.29 A
R
G
= 50
t
f
-
85
115
BSS 295
Data Sheet
4
05.99
Electrical Characteristics,
at T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current
T
A
= 25 C
I
S
-
-
1.4
A
Inverse diode direct current,pulsed
T
A
= 25 C
I
SM
-
-
5.6
Inverse diode forward voltage
V
GS
= 0 V, I
F
= 2.8 A
V
SD
-
1
1.5
V
BSS 295
Data Sheet
5
05.99
Power dissipation
P
tot
=
(
T
A
)
0
20
40
60
80
100
120
C
160
T
A
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
W
1.2
P
tot
Drain current
I
D
=
(
T
A
)
parameter:
V
GS
10 V
0
20
40
60
80
100
120
C
160
T
A
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
A
1.5
I
D
Safe operating area
I
D
=f(
V
DS
)
parameter :
D = 0.01, T
C
=25C
Drain-source breakdown voltage
V
(BR)DSS
=
(
T
j
)
-60
-20
20
60
100
C
160
T
j
45
46
47
48
49
50
51
52
53
54
55
56
57
58
V
60
V
(BR)DSS