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Электронный компонент: BXY43-FP

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BXY43
Semiconductor Group
1 of 6
Draft B, September 99
HiRel Silicon PIN Diode
HiRel Discrete and Microwave
Semiconductor
Current controlled RF resistor for RF
attenuators and switches
High reverse voltage
Hermetically sealed microwave
package
Space Qualified
ESA/SCC Detail Spec. No.: 5513/030
Type Variant No.s 01 to 03
ESD: Electrostatic discharge sensitive
device,
observe handling precautions!
Type
Marking
Ordering Code
Pin Configuration
Package
BXY43-T (ql)
-
see below
1
2
T
BXY43-T1 (ql)
1
2
T1
BXY43-P1 (ql)
1
2
T2
BXY43-FP (ql)
1
1'
2
FP
(ql) Quality Level:
P: Professional Quality,
Ordering Code:
Q62702X151
H: High Rel Quality,
Ordering Code:
on request
S: Space Quality,
Ordering Code:
on request
ES: ESA Space Quality,
Ordering Code:
Q62702X169
(see order instructions for ordering example)
T
T1
P1
FP
BXY43
Semiconductor Group
2 of 6
Draft B, September 99
Maximum Ratings
Parameter
Symbol
Values
Unit
Reverse Voltage
V
R
150
V
Forward Current
I
F
400
mA
Power Dissipation
1)
P
tot
500
mW
Operating Temperature Range
T
op
-55 to +150
C
Storage Temperature Range
T
stg
-65 to +175
C
Soldering Temperature
2)
T
sol
+235
C
Junction Temperature
T
j
150
C
Thermal Resistance Junction-Case
BXY43-T
BXY43-T1
BXY43-P1
BXY43-FP
R
th(j-c)
100
125
90
100
K/W
Notes.:
1.) For BXY43-T:
At T
CASE
= 100 C. For T
CASE
> 100 C derating is required.
For BXY43-T1: At T
CASE
= 87,5 C. For T
CASE
> 87,5 C derating is required.
For BXY43-P1: At T
CASE
= 105 C. For T
CASE
> 105 C derating is required.
For BXY43-FP: At T
CASE
= 100 C. For T
CASE
> 100 C derating is required.
2.) During 5 sec. maximum. The same terminal shall not be resoldered until 5 minutes have
elapsed.
Electrical Characteristics
at T
A
=25C; unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Reverse Current 1
V
R1
=150V
I
R1
-
-
100
nA
Reverse Current 2
V
R2
=100V
I
R2
-
-
10
nA
Forward Voltage
I
F
=100mA
V
F
-
0,97
1
V
BXY43
Semiconductor Group
3 of 6
Draft B, September 99
Electrical Characteristics (continued)
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Total Capacitance
V
R
=50V; f=1MHz
BXY43-T, -T1
BXY43-P1
BXY43-FP
C
T
-
0,3
0,4
0,3
0,50
0,6
0,45
0,75
0,85
pF
Forward Resistance 1
f=100MHz, I
F1
=20A
R
F1
-
55
70
Forward Resistance 2
f=100MHz, I
F2
=1mA
R
F2
-
2,2
3,0
Forward Resistance 3
f=100MHz, I
F3
=10mA
R
F3
-
0,9
1,5
Minority Carrier Lifetime
I
F
=10mA, I
R
=6mA, I
R
=3mA
L
250
650
ns
BXY43
Semiconductor Group
4 of 6
Draft B, September 99
Order Instructions:
Full type variant including package variant and quality level must be specified by the orderer.
For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family
and quality level only.
Ordering Form:
Ordering Code: Q..........
BXY43- (x) (ql)
(x): Package Variant
(ql): Quality Level
Ordering Example:
Ordering Code: Q62702X169
BXY43-T1 ES
For BXY43 in T1 Package; ESA Space Quality Level
Further Informations:
See our WWW-Pages:
- Discrete and RF-Semiconductors (Small Signal Semiconductors)
www.infineon.com/products/discrete/hirel.htm
- HiRel Discrete and Microwave Semiconductors
www.infineon.com/products/discrete/hirel.htm
Please contact also our marketing division :
Tel.:
++89 234 24480
Fax.:
++89 234 25568
e-mail: martin.wimmers@infineon.com
Address:
Infineon Technologies Semiconductors,
High Frequency Products Marketing,
P.O.Box 801709,
D-81617 Munich
BXY43
Semiconductor Group
5 of 6
Draft B, September 99
T Package
B
C
X1
Y1
Y2
A
1
2
Symbol
Millimetre
min
max
A
1,30
1,45
B
1,15
1,35
C
-
0,40
T1 Package
B
C
Y1
Y2
X1
G
D
H
A
E
F
G
1
2
Symbol
Millimetre
min
max
A
1,30
1,45
B
1,15
1,35
C
-
0,40
D
0,10
0,50
E
-
0,30
F
0,06
0,10
G
5,50
-
H
0,40
0,60
P1 Package
Cathode
D
C
A
B
X1
Y1
Y2
1
2
Symbol
Millimetre
min
max
A
2,0
2,2
B
3,0
3,2
C
1,45
1,7
D
0,4
0,6
BXY43
Semiconductor Group
6 of 6
Draft B, September 99
FP Package
1
1'
n.c.
n.c.
F
d1
D1
d
L
L
B
B1
2
D
Y1
Y2
X1
Symbol
Millimetre
min
max
B
3,10
3,55
B1
3,00
3,30
D
1,30
1,70
D1
0,55
0,65
d
0,10
0,15
d1
0,25
0,40
F
2,40
2,60
L
5,50
-
Published by Infineon Technologies Semiconductors,
High Frequency Products Marketing, P.O.Box 801709,
D-81617 Munich.
Infineon Technologies AG 1998. All Rights Reserved.
As far as patents or other rights of third parties are
concerned, liability is only assumed for components per
se, not for applications, processes and circuits
implemented within components or assemblies.
The information describes the type of component and shall
not be considered as assured characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery and prices please
contact the Offices of Semiconductor Group in Germany or
the Infineon Technologies Companies and
Representatives woldwide (see address list).
Due to technical requirements components may contain
dangerous substances. For information on the type in
question please contact your nearest Infineon
Technologies Office, Semiconductor Group.
Infineon Technologies Semiconductors is a certified CECC
and QS9000 manufacturer (this includes ISO 9000).