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Электронный компонент: IW4012BD

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TECHNICAL DATA
15
Dual 4-Input NAND Gate
High-Voltage Silicon-Gate CMOS
The IW4012B NAND gates provide the system designer with
direct emplementation of the NAND function.
Operating Voltage Range: 3.0 to 18 V
Maximum input current of 1
A at 18 V over full package-
temperature range; 100 nA at 18 V and 25
C
Noise margin (over full package temperature range):
1.0 V min @ 5.0 V supply
2.0 V min @ 10.0 V supply
2.5 V min @ 15.0 V supply
IW4012B
ORDERING INFORMATION
IW4012BN Plastic
IW4012BD SOIC
T
A
= -55
to 125
C for all packages
LOGIC DIAGRAM
PINS 6, 8 = NO CONNECTION
PIN 14 =V
CC
PIN 7 = GND
PIN ASSIGNMENT
NC = NO CONNECTION
FUNCTION TABLE
Inputs
Output
A
B
C
D
Y
L
X
X
X
H
X
L
X
X
H
X
X
L
X
H
X
X
X
L
H
H
H
H
H
L
X = don't care
IW4012B
16
MAXIMUM RATINGS
*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
-0.5 to +20
V
V
IN
DC Input Voltage (Referenced to GND)
-0.5 to V
CC
+0.5
V
V
OUT
DC Output Voltage (Referenced to GND)
-0.5 to V
CC
+0.5
V
I
IN
DC Input Current, per Pin
10
mA
P
D
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
750
500
mW
P
D
Power Dissipation per Output Transistor
100
mW
Tstg
Storage Temperature
-65 to +150
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
260
C
*
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/
C from 65
to 125
C
SOIC Package: : - 7 mW/
C from 65
to 125
C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
3.0
18
V
V
IN
, V
OUT
DC Input Voltage, Output Voltage (Referenced to GND)
0
V
CC
V
T
A
Operating Temperature, All Package Types
-55
+125
C
This device contains protection circuitry to guard against damage due to high static voltages or electric
fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated
voltages to this high-impedance circuit. For proper operation, V
IN
and V
OUT
should be constrained to the range
GND
(V
IN
or V
OUT
)
V
CC
.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V
CC
).
Unused outputs must be left open.
IW4012B
17
DC ELECTRICAL CHARACTERISTICS
(Voltages Referenced to GND)
V
CC
Guaranteed Limit
Symbol
Parameter
Test Conditions
V
-55
C
25
C
125
C
Unit
V
IH
Minimum High-Level
Input Voltage
V
OUT
=0.5 V or V
CC
- 0.5 V
V
OUT
=1.0 V or V
CC
- 1.0 V
V
OUT
=1.5 V or V
CC
- 1.5 V
5.0
10
15
3.5
7
11
3.5
7
11
3.5
7
11
V
V
IL
Maximum Low -Level
Input Voltage
V
OUT
= V
CC
- 0.5V
V
OUT
= V
CC
- 1.0 V
V
OUT
= V
CC
- 1.5V
5.0
10
15
1.5
3
4
1.5
3
4
1.5
3
4
V
V
OH
Minimum High-Level
Output Voltage
V
IN
=GND or V
CC
5.0
10
15
4.95
9.95
14.95
4.95
9.95
14.95
4.95
9.95
14.95
V
V
OL
Maximum Low-Level
Output Voltage
V
IN
= V
CC
5.0
10
15
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
V
I
IN
Maximum Input
Leakage Current
V
IN
= GND or V
CC
18
0.1
0.1
1.0
A
I
CC
Maximum Quiescent
Supply Current
(per Package)
V
IN
= GND or V
CC
5.0
10
15
20
0.25
0.5
1.0
5.0
0.25
0.5
1.0
5.0
7.5
15
30
150
A
I
OL
Minimum Output Low
(Sink) Current
V
IN
= GND or V
CC
U
OL
=0.4 V
U
OL
=0.5 V
U
OL
=1.5 V
5.0
10
15
0.64
1.6
4.2
0.51
1.3
3.4
0.36
0.9
2.4
mA
I
OH
Minimum Output
High (Source) Current
V
IN
= GND or V
CC
U
OH
=2.5 V
U
OH
=4.6 V
U
OH
=9.5 V
U
OH
=13.5 V
5.0
5.0
10
15
-2.0
-0.64
-1.6
-4.2
-1.6
-0.51
-1.3
-3.4
-1.15
-0.36
-0.9
-2.4
mA
IW4012B
18
AC ELECTRICAL CHARACTERISTICS
(C
L
=50pF, R
L
=200k
, Input t
r
=t
f
=20 ns)
V
CC
Guaranteed Limit
Symbol
Parameter
V
-55
C
25
C
125
C
Unit
t
PLH
, t
PHL
Maximum Propagation Delay, Input A, B,C
or D to Output Y (Figure 1)
5.0
10
15
250
120
90
250
120
90
500
240
180
ns
t
TLH
, t
THL
Maximum Output Transition Time, Any Output
(Figure 1)
5.0
10
15
200
100
80
200
100
80
400
200
160
ns
C
IN
Maximum Input Capacitance
-
7.5
pF
Figure 1. Switching Waveforms
EXPANDED LOGIC DIAGRAM
(1/2 of the Device)