BT100-8
Sensitive Gate Silicon Controlled Rectifiers
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current (IT(RMS)=0.8 A)
Low On-State Voltage (1.2V(Typ.)@ITM)
General Description
Sensitive triggering SCR is suitable for the application
where gate current limited such as small motor control,
gate driver for large SCR, sensing and detecting circuits.
Absolute Maximum Ratings
(TJ=25
unless otherwise specified)
Symbol
Parameter
Condition
Ratings
Units
V
DRM
Repetitive Peak Off-state Voltage
600 V
I
T(AV)
Average On-State Current
Half Sine Wave : T
C
=74
0.5
A
I
T(RMS)
R.M.S On-State Current
All Conduction Angle
0.8
A
I
TSM
Surge On-State Current
1/2 Cycle, 60Hz, Sine Wave Non-
Repetitive
10
A
I
2 t
I
t
for Fusing
t = 8.3ms
0.415
A
S
P
GM
Forward Peak Gate Power
Dissipation
T
A
=25, Pulse Width1.0
2
W
P
G(AV)
Forward Average Gate Power
Dissipation
T
A
=25, t=8.3ms
0.1
W
I
FGM
Forward Peak Gate Current
1
A
V
RGM
Reverse Peak Gate Voltage
5.0
V
T
J
Operating Junction Temperature
-40 ~ 125
T
STG
Storage Temperature
-40 ~ 150
1
BT100-8
Electrical Characteristics
Ratings
Symbol
Items
Conditions
Min
Typ Max
Unit
I
DRM
Repetitive Peak Off-
State Current
V
AK
=V
DRM,
or V
RRM:
R
GK
=1000
T
c
=25
T
c
=125
10
200
V
TM
Peak On-State
Voltage(1)
(I
TM
=1A, Peak)
1.2
1.7
V
I
GT
Gate Trigger
Current(2)
V
AK
=6V, R
L
=100
T
c
=25
T
c
=-40
200
500
V
GT
Gate Trigger
Voltage(2)
VD=7V, RL=100
T
c
=25
T
c
=-40
0.8
1.2
V
V
GD
Non-Trigger Gate
Voltage(1)
V
AK
=12V, R
L
=100
T
c
=125 0.2
V
dv/dt
Critical Rate of Rise
Off-State Voltage
V
D
=Rated V
DRM
,
Exponential wave-form
R
GK
=1000 T
J
=125
500 800
V/
di/dt
Critical Rate of Rise
Off-State Voltage
I
TM
=2A ; Ig=10mA
50
A/
V
AK
=12V, Gate Open
I
H
Holding Current
Initiating Current=50mA T
c
=25
T
c
=-40
2
5.0
10
mA
R
th(j-c)
Thermal Impedance
Junction to case
60
/W
R
th(j-a)
Thermal Impedance
Junction to Ambient
150
/W
Notes :
1. Pulse Width 1.0ms, Duty cycle 1%
2. Does not include R
GK
in measurement.
2
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