HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HN200204
Issued Date : 2001.07.01
Revised Date : 2004.09.08
Page No. : 1/5
HMBT468
HSMC Product Specification
HMBT468
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT468 is designed for general purpose low frequency power amplifier
applications.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150
C
Junction Temperature ..................................................................................................................... 150
C Maximum
Maximum Power Dissipation
Total Power Dissipation (T
A
=25
C) ............................................................................................................... 225 mW
Maximum Voltages and Currents (T
A
=25
C)
V
CBO
Collector to Base Voltage ........................................................................................................................... 25 V
V
CEO
Collector to Emitter Voltage ........................................................................................................................ 20 V
V
EBO
Emitter to Base Voltage ................................................................................................................................ 5 V
I
C
Collector Current ............................................................................................................................................... 1 A
Electrical Characteristics
(T
A
=25
C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BV
CBO
25
-
-
V
I
C
=10uA, I
E
=0
BV
CEO
20
-
-
V
I
C
=1mA, I
B
=0
BV
EBO
5
-
-
V
I
E
=10uA, I
C
=0
I
CBO
-
-
1
uA
V
CB
=20V, I
E
=0
*V
CE(sat)
-
-
500
mV
I
C
=0.8A, I
B
=80mA
V
BE(on)
-
-
1
V
V
CE
=2V, I
C
=500mA
*h
FE
85
-
400
V
CE
=2V, I
C
=500mA
f
T
-
190
-
MHz
V
CE
=2V, I
C
=500mA
Cob
-
22
-
pF
V
CB
=10V, f=1MHz, I
E
=0
*Pulse Test: Pulse Width
380us, Duty Cycle
2%
Classification of hFE
Rank
B
C
D
Range
85-170
120-240
200-400
SOT-23
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HN200204
Issued Date : 2001.07.01
Revised Date : 2004.09.08
Page No. : 2/5
HMBT468
HSMC Product Specification
Characteristics Curve
Current Gain & Collector Current
10
100
1000
0.1
1
10
100
1000
10000
Collector Current (mA)
hF
E
V
CE
=2V
Saturation Voltage & Collector Current
1
10
100
1000
0.1
1
10
100
1000
10000
Collector Current (mA)
S
a
t
u
r
a
t
i
on
V
o
l
t
ag
e (
m
V
)
V
CE(sat)
@ I
C
=10I
B
On Voltage & Collector Current
100
1000
10000
0.1
1
10
100
1000
10000
Collector Current (mA)
O
n
V
o
l
t
ag
e (
m
V
)
V
BE(on)
@ V
CE
=2V
Cutoff Frequency & Ic
10
100
1000
1
10
100
1000
Collector Current (mA)
C
u
to
ff F
r
e
q
u
e
n
c
y
(
M
H
z
)
V
CE
=2V
Capacitance & Reverse-Biased Voltage
1
10
100
0.1
1
10
100
1000
Reverse Biased Voltage (V)
C
apa
c
i
t
a
n
c
e (
p
F
)
Cob
IR Reflow Profile
0
20
40
60
80
100
120
140
160
180
200
220
240
260
0
50
100
150
200
250
300
Time(sec)
T
e
m
per
at
u
r
e(
o
C)
150+/-30
40+/-20 sec
10+/-2 sec
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HN200204
Issued Date : 2001.07.01
Revised Date : 2004.09.08
Page No. : 3/5
HMBT468
HSMC Product Specification
Temperature Profile for Dip Soldering
0
50
100
150
200
250
300
0
50
100
150
200
250
300
350
Time(sec)
T
e
m
per
at
u
r
e(
o
C)
10+/-2 sec
120+/-20 sec
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HN200204
Issued Date : 2001.07.01
Revised Date : 2004.09.08
Page No. : 4/5
HMBT468
HSMC Product Specification
SOT-23 Dimension
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H
J
K
D
A
L
G
V
C
B
3
2
1
S
DIM
Min.
Max.
A
2.80
3.04
B
1.20
1.60
C
0.89
1.30
D
0.30
0.50
G
1.70
2.30
H
0.013
0.10
J
0.085
0.177
K
0.32
0.67
L
0.85
1.15
S
2.10
2.75
V
0.25
0.65
*: Typical, Unit: mm
Marking:
4 6
Pb Free Mark
Pb-Free: " "
(Note)
Normal: None
8
Note: Pb-free product can distinguish by the green
label or the extra description on the right
side of the label.
Pin Style: 1.Base 2.Emitter 3.Collector
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
3-Lead SOT-23 Plastic
Surface Mounted Package
HSMC Package Code: N
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HN200204
Issued Date : 2001.07.01
Revised Date : 2004.09.08
Page No. : 5/5
HMBT468
HSMC Product Specification
Soldering Methods for HSMC's Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%15%
2. Reflow soldering of surface-mount devices
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Average ramp-up rate (T
L
to T
P
)
<3
o
C/sec
<3
o
C/sec
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
100
o
C
150
o
C
60~120 sec
150
o
C
200
o
C
60~180 sec
Tsmax to T
L
- Ramp-up Rate
<3
o
C/sec
<3
o
C/sec
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
183
o
C
60~150 sec
217
o
C
60~150 sec
Peak Temperature (T
P
)
240
o
C +0/-5
o
C
260
o
C +0/-5
o
C
Time within 5
o
C of actual Peak
Temperature (t
P
)
10~30 sec
20~40 sec
Ramp-down Rate
<6
o
C/sec
<6
o
C/sec
Time 25
o
C to Peak Temperature
<6 minutes
<8 minutes
3. Flow (wave) soldering (solder dipping)
Products
Peak temperature
Dipping time
Pb devices.
245
o
C
5
o
C
5sec
1sec
Pb-Free devices.
260
o
C +0/-5
o
C
5sec
1sec
Figure 1: Temperature profile
t
P
t
L
Ramp-down
Ramp-up
Ts
max
Ts
min
Critical Zone
T
L
to T
P
t
S
Preheat
T
L
T
P
25
t 25
o
C to Peak
Time
Tem
p
erature
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