HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HNE200201
Issued Date : 2002.08.01
Revised Date : 2003.03.12
Page No. : 1/5
HBT134XNE Series
HSMC Product Specification
HBT134XNE Series
TRIAC, LOGIC LEVEL & STANDARD
Description
Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional
switching and phase control applications, where high sensitivity is required in all four quadrants.
Quick Reference Data
Part No.
V
DRM
(V)
I
T(RMS)
(A)
I
TSM
(A)
Quadrant
HBT134CNE
600
4
30
All
HBT134DNE
600
4
30
I - II - III
HBT134GNE
800
4
30
All
HBT134HNE
800
4
30
I - II - III
Pin Configuration
Pin
Description
1
Main terminal 1
2
Main terminal 2
3
Gate
2
1
3
Symbol
T2
T1
G
Limtiing Values
Symbol
Parameter
Min.
Max.
Units
HBT134CNE / DNE Repetitive peak off-state voltages
-
600
V
V
DRM
HBT134GNE / HNE Repetitive peak off-state voltages
-
800
V
I
T(RMS)
RMS on-state current
-
4
A
I
TSM
Non-repetitive peak on-state current
-
30
A
I
2
t
I
2
t for fusing
-
3.7
A
2
S
Repetitive rate of rise of on-state current after triggering
T2+ G+
-
50
A/us
T2+ G-
-
50
A/us
T2- G-
-
50
A/us
dI
T
/dt
T2- G+ (HBT134DNE / HNE without this quadrant)
-
10
A/us
I
GM
Peak gate current
-
1
A
V
GM
Peak gate voltage
-
7
V
P
GM
Peak gate power
-
1.5
W
P
G(AV)
Average gate power
-
0.1
W
Tstg
Storage Temperature Range
-
150
C
Tj
Operating junction temperature
-40
125
C
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HNE200201
Issued Date : 2002.08.01
Revised Date : 2003.03.12
Page No. : 2/5
HBT134XNE Series
HSMC Product Specification
HBT134CNE / HBT134GNE
Electrical Characteristics
(Ta=25
C, unless otherwise stated, 4 Quadrant)
Rank
Symbol
Parameter
Conditions
T
U
Unit
V
D
=6V, R
L
=10
, T2+ G+
5
10
mA
V
D
=6V, R
L
=10
, T2+ G-
5
10
mA
V
D
=6V, R
L
=10
, T2- G-
5
10
mA
I
GT
Gate Trigger Current
V
D
=6V, R
L
=10
, T2- G+
10
25
mA
V
D
=6V, R
L
=10
, T2+ G+
15
15
mA
V
D
=6V, R
L
=10
, T2+ G-
20
20
mA
V
D
=6V, R
L
=10
, T2- G-
15
15
mA
I
L
Latching Current
V
D
=6V, R
L
=10
, T2- G+
20
20
mA
I
H
Holding Current
V
D
=12V, I
GT
=0.1A
15
15
mA
V
T
On-state Voltage
I
T
=4.5A
1.5
1.5
V
V
D
=6V, R
L
=10
, T2+ G+
1.5
1.5
V
V
D
=6V, R
L
=10
, T2+ G-
1.5
1.5
V
V
D
=6V, R
L
=10
, T2- G-
1.5
1.5
V
V
GT
Gate Trigger Voltage
V
D
=6V, R
L
=10
, T2- G+
1.8
1.8
V
I
D
Off-state Leakage
Current
V
D
=V
DRM
200
200
uA
HBT134DNE / HBT134HNE
Electrical Characteristics
(Ta=25
C, unless otherwise stated, 3 Quadrant)
Rank
Symbol
Parameter
Conditions
T
U
Unit
V
D
=6V, R
L
=10
, T2+ G+
5
10
mA
V
D
=6V, R
L
=10
, T2+ G-
5
10
mA
V
D
=6V, R
L
=10
, T2- G-
5
10
mA
I
GT
Gate Trigger Current
V
D
=6V, R
L
=10
, T2- G+
-
-
mA
V
D
=6V, R
L
=10
, T2+ G+
15
15
mA
V
D
=6V, R
L
=10
, T2+ G-
20
20
mA
V
D
=6V, R
L
=10
, T2- G-
15
15
mA
I
L
Latching Current
V
D
=6V, R
L
=10
, T2- G+
-
-
mA
I
H
Holding Current
V
D
=12V, I
GT
=0.1A
15
15
mA
V
T
On-state Voltage
I
T
=4.5A
1.5
1.5
V
V
D
=6V, R
L
=10
, T2+ G+
1.5
1.5
V
V
D
=6V, R
L
=10
, T2+ G-
1.5
1.5
V
V
D
=6V, R
L
=10
, T2- G-
1.5
1.5
V
V
GT
Gate Trigger Voltage
V
D
=6V, R
L
=10
, T2- G+
-
-
V
I
D
Off-state Leakage
Current
V
D
=V
DRM
200
200
uA
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HNE200201
Issued Date : 2002.08.01
Revised Date : 2003.03.12
Page No. : 3/5
HBT134XNE Series
HSMC Product Specification
Static Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
dV
D
/dt
Critical rate of rise of
off-state voltage
V
DM
=67% V
DRM(max)
;
Tj= 125
C; exponential waveform;
gate open circuit
-
50
-
V/us
tgt
Gate controlled
turn-on time
I
TM
=6A; V
D
=V
DRM(max)
;
I
G
=0.1A; dI
G
/dt=5A/us
-
2
-
us
Thermal Resistances
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Rth j-mb
Thermal resistance junction to mounting
base
Rth j-a
Thermal resistance junction to ambient
Full cycle
Half cycle
In free air
-
-
-
-
-
60
3.0
3.7
-
K/W
K/W
K/W
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HNE200201
Issued Date : 2002.08.01
Revised Date : 2003.03.12
Page No. : 4/5
HBT134XNE Series
HSMC Product Specification
Characteristics Curve
Normalised Gate Trigger Current IGT(Ta)/IGT(25
o
C),
Versus Air Temperature Ta
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
20
40
60
80
100
120
140
Ta(
o
C)
IG
T
/
IG
T
(
2
5
o
C)
T2+/G+
T2+/G-
T2-/G-
T2-/G+
Typical & Maximum On-State Characteristic
0
1
2
3
4
5
6
7
8
9
10
11
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
VT/V
IT
/
A
typ
25C
125C
Normalised Latching Current IL(Ta)/IL(25
o
C),
Versus Air Temperature Ta
0
0.5
1
1.5
2
2.5
3
0
25
50
75
100
125
150
Ta(
o
C)
I
L
/
I
L(
25
o
C)
Maximum On-State Dissipation, Ptot Versus Rms
On-State Current, a=Conduction Angle
0
1
2
3
4
5
6
7
8
0.0
1.0
2.0
3.0
4.0
5.0
IT(RMS)/A
P
t
o
t/w
a=90
a=120
a=180
a
a
Normalised Gate Trigger Voltage VGT(Ta)/VGT(25
o
C),
Versus Air Temperature Ta
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
Ta(
o
C)
VG
T
/
VG
T
(
2
5
o
C)
T2+/G+
T2-/G-
Normalised Holding Current IH(Ta)/IH(25
o
C),
Versus Air Temperature Ta
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
20
40
60
80
100
120
140
Ta/(
o
C)
IL
/IL
(
2
5
o
C)
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HNE200201
Issued Date : 2002.08.01
Revised Date : 2003.03.12
Page No. : 5/5
HBT134XNE Series
HSMC Product Specification
SOT-82 Dimension
*: Typical
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
DIM
Min.
Max.
Min.
Max.
A
0.2980
0.3020
7.57
7.67
J
0.1780
0.1819
4.52
4.62
B
0.2142
0.2181
5.44
5.54
K
0.0980
0.1020
2.49
2.59
C
0.1488
0.1567
3.78
3.98
L
0.0433
0.0472
1.10
1.20
D
0.4281
0.4321
10.875
10.975
M
-
0.0236
-
*0.60
E
0.4035
0.4232
10.25
10.75
N
0.0480
0.0520
1.22
1.32
F
-
0.0500
-
*1.27
a1
-
*3
o
-
*3
o
G
-
0.0299
-
*0.76
r1
-
0.1220
-
3.10
H
0.0457
0.0496
1.16
1.26
r2
-
R0.0669
-
R1.70
I
-
*0.0299
-
*0.76
r3
-
R0.0079
-
R0.20
Notes:
1.Dimension and tolerance based on our Spec. dated May. 01, 2002.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
Lead: 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
B
A
C
D
E
F
G
J
H
I
K
a1
1
2
3
a1
r3
L
a1
a1
M
N
r1
r2
3-Lead SOT-82 Plastic Package
HSMC Package Code: NE
Marking:
Date Code
3
1
4
H
T
Control Code
B
Rank Code
Serial Code
Style: Pin 1. Main terminal 1
2. Main terminal 2
3. Gate
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