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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-C026
WIDEBAND HIGH GAIN POWER AMPLIFIER
MODULE, 2 - 20 GHz
v00.1005
Functional Diagram
Typical Applications
General Description
Features
Electrical Specifications,
T
A
= +25 C, +VDC = +11V to +16V, -VDC = -3V to -12V
The HMC-C026 Wideband PA is ideal for:
Telecom Infrastructure
Microwave Radio & VSAT
Military & Space
Test Instrumentation
Fiber Optics
The HMC-C026 is a GaAs MMIC PHEMT Distrib-
uted Power Amplifi er in a miniature, hermetic module
with replaceable SMA connectors which operates
between 2 and 20 GHz. The amplifi er provides 30
dB of gain, 2.5 dB noise fi gure, +30 dBm output IP3
and up to +26 dBm of output power at 1 dB gain com-
pression. The wideband amplifi er I/Os are internally
matched to 50 Ohms and are DC blocked making
the HMC-C026 ideal for EW, ECM RADAR and test
equipment applications. Integrated voltage regula-
tors allow for fl exible biasing of both the negative and
positive supply pins, while internal bias sequencing
circuitry assures robust operation.
Gain: 30 dB @ 8 GHz
P1dB Output Power: +26 dBm @ 8 GHz
Noise Figure: 2.5 dB @ 8 GHz
Spurious-Free Operation
Regulated Supply and Bias Sequencing
Hermetically Sealed Module
Field Replaceable SMA connectors
-55 to +85C Operating Temperature
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
2.0 - 6.0
6.0 - 12.0
12.0 - 16.0
16.0 - 20.0
GHz
Gain
28
31
26
29
24
27
19
22
dB
Gain Flatness
0.25
0.75
1.0
2.0
dB
Gain Variation Over Temperature
0.03
0.04
0.03
0.04
0.03
0.04
0.03
0.04
dB/ C
Noise Figure
3.0
5.0
2.5
3.5
3.0
4.0
3.5
5.0
dB
Input Return Loss
15
15
13
10
dB
Output Return Loss
15
15
10
8
dB
Output Power for 1 dB
Compression (P1dB)
23
26
22.5
25.5
20
24
18
21
dBm
Saturated Output Power (Psat)
27.5
27
25
23
dBm
Output Third Order Intercept (IP3)
33
30
27
24
dBm
Positive Supply Current (+IDC)
400
400
400
400
mA
Negative Supply Current (-IDC)
3.2
3.2
3.2
3.2
mA
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Noise Figure vs. Temperature
Gain vs. Temperature
Output Return Loss vs. Temperature
Gain & Return Loss
Reverse Isolation vs. Temperature
Input Return Loss vs. Temperature
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
35
0
2
4
6
8
10
12
14
16
18
20
22
24
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
HMC-C026
v00.1005
-25
-20
-15
-10
-5
0
0
2
4
6
8
10
12
14
16
18
20
22
+25 C
+85 C
-55 C
RETURN LOSS (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
12
14
16
18
20
22
+25 C
+85 C
-55 C
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
-80
-70
-60
-50
-40
-30
-20
-10
0
0
2
4
6
8
10
12
14
16
18
20
22
+25 C
+85 C
-55 C
ISOLATION (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0
2
4
6
8
10
12
14
16
18
20
22
+25 C
+85 C
-55 C
RETURN LOSS (dB)
FREQUENCY (GHz)
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
0
2
4
6
8
10
12
14
16
18
20
22
+25 C
+85 C
-55 C
GAIN
(dB)
FREQUENCY (GHz)
WIDEBAND HIGH GAIN POWER AMPLIFIER
MODULE, 2 - 20 GHz
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Absolute Maximum Ratings
Positive Bias Supply Voltage (+VDC)
+17V Max
Negative Bias Supply (-VDC)
-16V Min.
RF Input Power (RFin)
+23 dBm
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 C
P1dB vs. Temperature
Psat vs. Temperature
Output IP3 vs. Temperature
v00.1005
HMC-C026
16
18
20
22
24
26
28
30
32
34
36
38
0
2
4
6
8
10
12
14
16
18
20
22
+25 C
+85 C
-55 C
OIP3 (dBm)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
30
0
2
4
6
8
10
12
14
16
18
20
22
+25 C
+85 C
-55 C
Psat (dBm)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
30
0
2
4
6
8
10
12
14
16
18
20
22
+25 C
+85 C
-55 C
P1dB (dBm)
FREQUENCY (GHz)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
WIDEBAND HIGH GAIN POWER AMPLIFIER
MODULE, 2 - 20 GHz
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
v00.1005
Pin Number
Function
Description
Interface Schematic
1
RFIN &
RF Ground
RF input connector, SMA female, fi eld replaceable.
This pin is AC coupled and matched to 50 Ohms
from 2 - 20 GHz.
2
+VDC
Positive power supply voltage for the amplifi er.
3
RFOUT &
RF Ground
RF output connector, SMA female. This pin is AC coupled
and matched to 50 Ohms from 2 - 20 GHz.
4
-VDC
Negative power supply votage for the amplifi er
5
GND
Power supply ground.
Pin Descriptions
HMC-C026
WIDEBAND HIGH GAIN POWER AMPLIFIER
MODULE, 2 - 20 GHz
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Outline Drawing
NOTES:
1. PACKAGE, LEADS, COVER MATERIAL: KOVARTM
2. SPACER MATERIAL: ALUMINUM
3. PLATING: ELECTROLYTIC GOLD 50 MICROINCHES MIN., OVER
ELECTROLYTIC NICKEL 75 MICROINCHES MIN.
4. ALL DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. TOLERANCES .005 [0.13] UNLESS OTHERWISE SPECIFIED.
6. FIELD REPLACEABLE SMA CONNECTORS.
TENSOLITE 5602 - 5CCSF OR EQUIVALENT.
7. TO MOUNT MODULE TO SYSTEM PLATFORM REPLACE 0 -80
HARDWARE WITH DESIRED MOUNTING SCREWS.
v00.1005
HMC-C026
WIDEBAND HIGH GAIN POWER AMPLIFIER
MODULE, 2 - 20 GHz
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