MICROWAVE CORPORATION
8 - 242
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC476MP86
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6.0 GHz
v00.0603
General Description
Features
Functional Diagram
The HMC476MP86 is a SiGe Heterojunction Bipolar
Transistor (HBT) Gain Block MMIC SMT amplifi er
covering DC to 6 GHz. This Micro-P packaged
amplifi er can be used as a cascadable 50 Ohm
RF/IF gain stage as well as a LO or PA driver with
up to +13 dBm output power. The HMC476MP86
offers 20 dB of gain with a +25 dBm output IP3
at 850 MHz while requiring only 35 mA from a
single positive supply. The Darlington feedback
pair used results in reduced sensitivity to normal
process variations and excellent gain stability over
temperature while requiring a minimal number of
external bias components.
P1dB Output Power: +12 dBm
Gain: 20 dB
Output IP3: +25 dBm
Cascadable 50 Ohm I/Os
Single Supply: +5V to +12V
Typical Applications
The HMC476MP86 is an ideal RF/IF
gain block & LO or PA driver for:
Cellular / PCS / 3G
Fixed Wireless & WLAN
CATV, Cable Modem & DBS
Microwave Radio & Test Equipment
Electrical Specifi cations,
Vs= 5.0 V, Rbias= 56 Ohm, T
A
= +25 C
Parameter
Min.
Typ.
Max.
Units
Gain
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 6.0 GHz
18.5
15.5
13.5
11.5
9.0
20.0
17.0
15.0
13.0
10.5
dB
dB
dB
dB
dB
Gain Variation Over Temperature
DC - 6.0 GHz
0.008
0.012
dB/ C
Input Return Loss
DC - 1.0 GHz
1.0 - 6.0 GHz
20
15
dB
dB
Output Return Loss
DC - 4.5 GHz
4.5 - 6.0 GHz
20
13
dB
dB
Reverse Isolation
DC - 6.0 GHz
18
dB
Output Power for 1 dB Compression (P1dB)
0.5 - 5.0 GHz
5.0 - 6.0 GHz
9.0
8.0
12.0
11.0
dBm
dBm
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
DC - 5.0 GHz
5.0 - 6.0 GHz
25
23
dBm
dBm
Noise Figure
DC - 3.0 GHz
3.0 - 6.0 GHz
2.5
3.5
dB
dB
Supply Current (Icq)
35
mA
Note: Data taken with broadband bias tee on device output.
MICROWAVE CORPORATION
8 - 243
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC476MP86
Output Return Loss vs. Temperature
v00.0603
Broadband Gain & Return Loss
Gain vs. Temperature
Reverse Isolation vs. Temperature
Input Return Loss vs. Temperature
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6.0 GHz
Noise Figure vs. Temperature
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
0
1
2
3
4
5
6
7
8
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
22
24
0
1
2
3
4
5
6
+25 C
+85 C
-40 C
GAIN
(dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0
1
2
3
4
5
6
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0
1
2
3
4
5
6
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0
1
2
3
4
5
6
+25 C
+85 C
-40 C
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
+25 C
+85 C
-40 C
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
MICROWAVE CORPORATION
8 - 244
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC476MP86
v00.0603
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6.0 GHz
Gain, Power & OIP3 vs. Supply Voltage
for Constant Id= 35 mA @ 850 MHz
P1dB vs. Temperature
Psat vs. Temperature
Output IP3 vs. Temperature
Vcc vs. Icc Over Temperature for
Fixed Vs= 5V, R
BIAS
= 56 Ohms
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
2.7
2.8
2.9
3
3.1
3.2
3.3
3.4
I
cc (mA)
Vcc (Vdc)
+85 C
+25 C
-40 C
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
5
6
7
8
9
10
Gain
P1dB
Psat
OIP3
Gain (dB), P1dB (dBm),
Psat (dBm), OIP3 (dBm)
Vs (Vdc)
10
12
14
16
18
20
22
24
26
28
30
0
1
2
3
4
5
6
+25 C
+85 C
-40 C
OIP3 (dBm)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0
1
2
3
4
5
6
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0
1
2
3
4
5
6
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
MICROWAVE CORPORATION
8 - 245
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC476MP86
v00.0603
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6.0 GHz
Outline Drawing
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+6.0 Vdc
Collector Bias Current (Icc)
45 mA
RF Input Power (RFin)(Vcc = +3.0 Vdc)
+18 dBm
Junction Temperature
150 C
Continuous Pdiss (T = 85 C)
(derate 7.75 mW/C above 85 C)
0.504 W
Thermal Resistance
(junction to lead)
129 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
7. THE MICRO-P PACKAGE IS DIMENSIONALLY COMPATABLE WITH
THE
"MICRO-X
PACKAGE"
MICROWAVE CORPORATION
8 - 246
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC476MP86
v00.0603
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6.0 GHz
Application Circuit
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1
RFIN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
3
RFOUT
RF output and DC Bias (Vcc) for the output stage.
2, 4
GND
These pins must be connected to RF/DC ground.
Recommended Component Values for Key Application Frequencies
Component
Frequency (MHz)
50
900
1900
2200
2400
3500
5200
5800
L1
270 nH
56 nH
18 nH
18 nH
15 nH
8.2 nH
6.8 nH
3.3 nH
C1, C2
0.01 F
100 pF
100 pF
100 pF
100 pF
100 pF
100 pF
100 pF
Supply Voltage (Vs)
5V
8V
10V
12V
R
BIAS
V
ALUE
56
130
180
240
R
BIAS
P
OWER
R
ATING
1/8 W
1/4 W
1/4 W
1/2 W
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. R
BIAS
provides DC bias stability over temperature.
Recommended Bias Resistor Values
for Icc= 35 mA, Rbias= (Vs - Vcc) / Icc
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