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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
HMC441
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6.0 - 18.0 GHz
v02.0304
General Description
Features
Functional Diagram
The HMC441 is an effi cient GaAs PHEMT MMIC
Medium Power Amplifi er which operates between
6.0 and 18.0 GHz*. The amplifi er provides 15.5
dB of gain, +22 dBm of saturated power, and 23%
PAE from a +5.0 V supply voltage. An optional
gate bias is provided to allow adjustment of gain,
RF output power, and DC power dissipation. The
HMC441 amplifi er can easily be integrated into
Multi-Chip-Modules (MCMs) due to its small
(.99mm
2
) size. The backside of the die is both
RF and DC ground, simplifying the assembly
process and reducing performance variation.
All data is tested with the chip in a 50 Ohm test
fi xture connected via 0.025mm (1 mil) diameter
wire bonds of minimal length 0.31mm (12 mils).
Gain: 15.5 dB
Saturated Power: +22 dBm @ 23% PAE
Single Supply Voltage:
+5.0 V w/ Optional Gate Bias
50 Ohm Matched Input/Output
Electrical Specifi cations,
T
A
= +25 C, Vdd1 = Vdd2 = 5V, Vgg1 = Vgg2 = Open
Typical Applications
The HMC441 is ideal for use as a medium power
amplifi er for:
Point-to-Point Radios
Point-to-Multi-Point Radios
VSAT
LO Driver for HMC Mixers
Military EW & ECM
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
7.0 - 8.0
8.0 - 12.5
12.5 - 14.0
14.0 - 15.5
GHz
Gain
13
15.5
14
16.5
13
15.5
12
14.5
dB
Gain Variation Over Temperature
0.015
0.02
0.015
0.02
0.015
0.02
0.015
0.02
dB/ C
Input Return Loss
10
13
15
14
dB
Output Return Loss
14
17
23
18
dB
Output Power for 1 dB Compression (P1dB)
15.5
18.5
16
19
17
20
17
20
dBm
Saturated Output Power (Psat)
17
20
18
21
19
22
19
22
dBm
Output Third Order Intercept (IP3)
29
31
32
32
dBm
Noise Figure
5.0
4.5
4.5
4.5
dB
Supply Current (Idd)
90
90
90
90
mA
Vgg1, Vgg2: Optional Gate Bias
*Contact HMC for Electrical Spec Limits for 6-7 & 15.5 - 18 GHz.
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AMPLIFIERS - CHIP
1
-30
-25
-20
-15
-10
-5
0
5
10
15
20
4
6
8
10
12
14
16
18
20
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
6
7
8
9
10
11
12
13
14
15
16
17
18
+25 C
+85 C
-55 C
GAIN (dB)
FREQUENCY (GHz)
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
6
7
8
9
10
11
12
13
14
15
16
17
18
+25 C
+85 C
-55 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-35
-30
-25
-20
-15
-10
-5
0
6
7
8
9
10
11
12
13
14
15
16
17
18
+25 C
+85 C
-55 C
RETURN LOSS (dB)
FREQUENCY (GHz)
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
HMC441
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6.0 - 18.0 GHz
v02.0304
Broadband Gain & Return Loss
Gain vs. Temperature
15
16
17
18
19
20
21
22
23
24
25
6
7
8
9
10
11
12
13
14
15
16
17
18
+25 C
+85 C
-55 C
P1dB (dBm)
FREQUENCY (GHz)
15
16
17
18
19
20
21
22
23
24
25
6
7
8
9
10
11
12
13
14
15
16
17
18
+25 C
+85 C
-55 C
Psat (dBm)
FREQUENCY (GHz)
P1dB vs. Temperature
Psat vs. Temperature
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AMPLIFIERS - CHIP
1
HMC441
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6.0 - 18.0 GHz
v02.0304
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
-10
-8
-6
-4
-2
0
2
4
6
8
10
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
16
18
20
22
24
26
28
30
32
34
36
6
7
8
9
10
11
12
13
14
15
16
17
18
+25 C
+85 C
-55 C
OIP3 (dBm)
FREQUENCY (GHz)
Power Compression @ 11 GHz
Output IP3 vs. Temperature
0
1
2
3
4
5
6
7
8
9
10
6
7
8
9
10
11
12
13
14
15
16
17
18
+25 C
+85 C
-55 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
Noise Figure vs. Temperature
Gain & Power vs. Supply Voltage @ 11 GHz
-60
-50
-40
-30
-20
-10
0
6
7
8
9
10
11
12
13
14
15
16
17
18
+25 C
+85 C
-55 C
ISOLATION (dB)
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
10
12
14
16
18
20
22
24
2.7
3
3.3
3.6
3.9
4.2
4.5
4.8
5.1
5.4
Gain
P1dB
Psat
GAIN (dB), P1dB (dBm), Psat (dBm)
Vdd Supply Voltage (Vdc)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
Power Compression @ 15 GHz
MICROWAVE CORPORATION
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AMPLIFIERS - CHIP
1
HMC441
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6.0 - 18.0 GHz
v02.0304
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2)
+5.5 Vdc
Gate Bias Voltage (Vgg1,Vgg2)
-8.0 to 0 Vdc
RF Input Power (RFin)(Vdd = +5.0 Vdc)
+20 dBm
Channel Temperature
175 C
Continuous Pdiss (T= 85 C)
(derate 10 mW/C above 85 C)
0.9 W
Thermal Resistance
(channel to die bottom)
100 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 C
Vdd (V)
Idd (mA)
+4.5
88
+5.0
90
+5.5
92
+2.7
80
+3.0
82
+3.3
83
Typical Supply Current vs. Vdd
Note: Amplifi er will operate over full voltage ranges shown above
Gain, Power & Output IP3
vs. Gate Voltage @ 12 GHz
0
5
10
15
20
25
30
35
0
30
60
90
120
150
180
210
-1
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
Gain
P1dB
Psat
OIP3
Idd
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
Idd (mA)
Vgg1, Vgg2 Gate Voltage (Vdc)
MICROWAVE CORPORATION
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Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
HMC441
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6.0 - 18.0 GHz
v02.0304
Pad Descriptions
Pin Number
Function
Description
Interface Schematic
1
RF IN
This pad is AC coupled and matched to 50 Ohms from
7 - 15.5 GHz.
2, 3
Vdd1, Vdd2
Power Supply Voltage for the amplifi er. An external bypass
capacitor of 100 pF is required.
4
RF OUT
This pad is AC coupled and matched to 50 Ohms from
7 -15.5 GHz.
5, 6
Vgg1, Vgg2
Optional gate control for amplifi er. If left open, the amplifi er
will run at standard current. Negative voltage applied will
reduce current.
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004"
3. TYPICAL BOND IS .004" SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
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AMPLIFIERS - CHIP
1
HMC441
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6.0 - 18.0 GHz
v02.0304
(b) Assembly with optional
gate bias voltage operation
(a) Assembly for single
supply voltage operation
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AMPLIFIERS - CHIP
1
HMC441
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6.0 - 18.0 GHz
v02.0304
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Han-
dling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm substrates are recommended for
bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the
die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One
way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader
(moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-
to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
HMC441
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6.0 - 18.0 GHz
v02.0304
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting
surface should be clean and fl at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature
of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip
to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31mm (12 mils).
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