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Электронный компонент: HAT1043

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HAT1043M
Silicon P Channel Power MOS FET
Power Switching
ADE-208-754D (Z)
5th Edition
February 1999
Features
Low on-resistance
Low drive current
High density mounting
2.5 V gate drive device can be driven from 3 V source
Outline
TSOP6
4
5
6
4 Source
3 Gate
1, 2, 5, 6 Drain
G
D
S
D D D
3
4
1 2
5 6
1
2
3
HAT1043M
2
Absolute Maximum Ratings (Ta = 25
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
20
V
Gate to source voltage
V
GSS
12
V
Drain current
I
D
4.4
A
Drain peak current
I
D(pulse)
Note 1
17.6
A
Body-drain diode reverse drain current
I
DR
Note 2
4.4
A
Channel dissipation
Pch
(pulse)
Note 2
2.0
W
Pch
(continuous)
Note 3
1.05
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. PW
10
s, duty cycle
1%
2. When using the alumina ceramic board (50 x 50 x 0.7 mm), PW
5 s, Ta = 25
C
3. When using the alumina ceramic board (50 x 50 x 0.7 mm), Ta = 25
C
Electrical Characteristics (Ta = 25
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
20
--
--
V
I
D
= 10 mA, V
GS
= 0
Gate to source leak current
I
GSS
--
--
0.1
A
V
GS
=
12 V, V
DS
= 0
Zero gate voltege drain current
I
DSS
--
--
1
A
V
DS
= 20 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
0.4
--
1.4
V
I
D
= 1 mA, V
DS
= 10 V
Static drain to source on state
R
DS(on)
--
55
65
m
I
D
= 3 A, V
GS
= 4.5 V
Note 1
resistance
--
85
110
m
I
D
= 3 A, V
GS
= 2.5 V
Note 1
Forward transfer admittance
|y
fs
|
4
7
--
S
I
D
= 3 A, V
DS
= 10 V
Note 1
Input capacitance
Ciss
--
750
--
pF
V
DS
= 10 V
Output capacitance
Coss
--
310
--
pF
V
GS
= 0
Reverse transfer capacitance
Crss
--
220
--
pF
f = 1 MHz
Total Gate charge
Qg
--
11
--
nc
V
DD
= 10 V
Gate to Source charge
Qgs
--
2
--
nc
V
GS
= 4.5 V
Gate to Drain charge
Qgd
--
3.5
--
nc
I
D
= 4.4 A
Turn-on delay time
t
d(on)
--
15
--
ns
V
GS
= 4.5 V, I
D
= 3 A
Rise time
t
r
--
100
--
ns
R
L
= 3.3
Turn-off delay time
t
d(off)
--
85
--
ns
Fall time
t
f
--
100
--
ns
Bodydrain diode forward voltage
V
DF
--
0.95
1.23
V
I
F
= 4.4 A, V
GS
= 0
Bodydrain diode reverse
recovery time
t
rr
--
50
--
ns
I
F
= 4.4 A, V
GS
= 0
diF/ dt = 20 A/
s
Note:
1. Pulse test
HAT1043M
3
Main Characteristics
2.0
1.5
1.0
0
50
100
150
200
-0.1
-0.3
-1
-3
-10
-30
-100
-10
-8
-6
-4
-2
0
-2
-4
-6
-8
-10
Channel Dissipation Pch (W)
Ambient Temperature Ta (
C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
-100
-30
-10
-3
-1
-0.1
-0.03
-0.01
-0.3
10
s
1 ms
Operation in
this area is
limited by R
DS(on)
PW = 10 ms (1 shot)
-2 V
0.5
V = -1.5 V
GS
-3 V
-10 V
-10
-8
-6
-4
-2
0
-1
-2
-3
-4
-5
Tc = 25
C
25
C
75
C
V = -10 V
Pulse Test
DS
Pulse Test
-2.5 V
-4 V
DC Operation (PW
5s)
Note1
Ta = 25
C
1 shot pulse
Note 1 When using the alumina ceramic board
( 50x50x0.7mm)
Test Condition
When using the alumina ceramic board
(50x50x0.7mm),(PW
5s)
100
s
HAT1043M
4
0
-4
-8
-12
-16
-20
250
200
150
100
50
50
0
50
100
150
200
0
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V (V)
DS(on)
Drain to Source Saturation Voltage
Drain Current I (A)
D
Drain to Source On State Resistance
R (m )
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (
C)
Static Drain to Source on State Resistance
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I (A)
D
Forward Transfer Admittance |y | (S)
fs
Forward Transfer Admittance vs.
Drain Current
V = -4.5 V
GS
-2.5 V
Pulse Test
R (m )
DS(on)
-0.5
-0.4
-0.3
-0.2
-0.1
Pulse Test
I = -5 A
D
-2 A
-1 A
-0.1
-2
-10
-0.2
1000
20
50
10
-1
-20
200
100
V = -2.5 V
GS
-4.5 V
Pulse Test
-1, -2 A
I = -5 A
D
-5 A
-0.1
-0.3
-1
-3
-10
-30 -50
50
10
20
2
5
0.2
0.5
0.1
Tc = 25
C
75
C
25
C
V = -10 V
Pulse Test
DS
500
-5
-0.5
1
-1, -2 A
HAT1043M
5
-0.1
-0.2
-0.5
-1
-2
-5
-10
0
-4
-8
-12
-16
-20
100
1000
300
0
-10
-20
-30
-40
-50
0
0
-2
-4
-6
-8
4
8
12
16
20
-10
1000
100
200
20
10
-0.1 -0.2
-2
-10
500
100
200
20
50
10
di / dt = 20 A / s
V = 0, Ta = 25 C
GS
30
-20
-1
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
BodyDrain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Collector to Emitter Voltage V (V)
DS
Gate to Emitter Voltage V (V)
GS
Dynamic Input Characteristics
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
10
V = 0
f = 1 MHz
GS
Ciss
Coss
Crss
I = -4.4 A
D
V
GS
V
DS
V = - 5 V
-10 V
-20 V
DD
-0.5
-5
50
V = -4.5 V, V = -10 V
PW = 5 s, duty < 1 %
GS
DD
r
t
d(on)
t
d(off)
t
t f
3000
500
V = - 5 V
-10 V
-20 V
DD