2SJ479(L), 2SJ479(S)
3
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
30
--
--
V
I
D
= 10mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
20
--
--
V
I
G
=
100
A, V
DS
= 0
Zero gate voltege drain
current
I
DSS
--
--
10
A
V
DS
= 30 V, V
GS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
=
16V, V
DS
= 0
Gate to source cutoff voltage
V
GS(off)
1.0
--
2.0
V
I
D
= 1mA, V
DS
= 10V
Static drain to source on state R
DS(on)
--
25
35
m
I
D
= 15A, V
GS
= 10V
Note3
resistance
R
DS(on)
--
40
60
m
I
D
= 15A, V
GS
= 4V
Note3
Forward transfer admittance
|y
fs
|
12
20
--
S
I
D
= 15A, V
DS
= 10V
Note3
Input capacitance
Ciss
--
1700
--
pF
V
DS
= 10V
Output capacitance
Coss
--
950
--
pF
V
GS
= 0
Reverse transfer capacitance Crss
--
260
--
pF
f = 1MHz
Turn-on delay time
t
d(on)
--
20
--
ns
V
GS
= 10V, I
D
= 15A
Rise time
t
r
--
290
--
ns
R
L
= 0.67
Turn-off delay time
t
d(off)
--
170
--
ns
Fall time
t
f
--
130
--
ns
Body to drain diode forward
voltage
V
DF
--
1.1
--
V
I
F
= 30A, V
GS
= 0
Body to drain diode reverse
recovery time
t
rr
--
70
--
ns
I
F
= 30A, V
GS
= 0
diF/ dt = 50A/
s
Note:
3. Pulse test
See characteristic curves of 2SJ471
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