2SJ172
Silicon P-Channel MOS FET
November 1996
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
Can be driven from 5 V source
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
1
2
3
TO-220AB
1. Gate
2. Drain
(Flange)
3. Source
D
G
S
2SJ172
2
Absolute Maximum Ratings (Ta = 25
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
60
V
Gate to source voltage
V
GSS
20
V
Drain current
I
D
10
A
Drain peak current
I
D(pulse)
*
1
40
A
Body to drain diode reverse drain current
I
DR
10
A
Channel dissipation
Pch*
2
40
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Notes
1. PW
10
s, duty cycle
1%
2. Value at T
C
= 25
C
Electrical Characteristics (Ta = 25
C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
--
--
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
20
--
--
V
I
G
=
100
A, V
DS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
=
16 V, V
DS
= 0
Zero gate voltage drain current I
DSS
--
--
250
A
V
DS
= 50 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
1.0
--
2.0
V
I
D
= 1 mA, V
DS
= 10 V
Static drain to source on state
R
DS(on)
--
0.13
0.18
I
D
= 5 A, V
GS
= 10 V*
1
resistance
--
0.18
0.25
I
D
= 5 A, V
GS
= 4 V*
1
Forward transfer admittance
|y
fs
|
4.0
6.5
--
S
I
D
= 5 A, V
DS
= 10 V*
1
Input capacitance
Ciss
--
900
--
pF
V
DS
= 10 V, V
GS
= 0,
Output capacitance
Coss
--
460
--
pF
f = 1 MHz
Reverse transfer capacitance
Crss
--
130
--
pF
Turn-on delay time
t
d(on)
--
8
--
ns
I
D
= 5 A, V
GS
= 10 V,
Rise time
t
r
--
65
--
ns
R
L
= 6
Turn-off delay time
t
d(off)
--
170
--
ns
Fall time
t
f
--
105
--
ns
Body to drain diode forward
voltage
V
DF
--
1.1
--
V
I
F
= 10 A, V
GS
= 0
Body to drain diode reverse
recovery time
t
rr
--
200
--
ns
I
F
= 10 A, V
GS
= 0,
di
F
/dt = 50 A/
s
Note
1. Pulse test
2SJ172
3
60
40
20
0
50
100
150
Case Temperature T
C
(
C)
Channel Dissipation Pch (W)
Power vs. Temperature Derating
100
10
1.0
0.1
1.0
10
100
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
30
3
0.3
0.1 0.3
3
30
Ta = 25
C
1 ms
PW = 10 ms (1 shot)
Operation in this area
is limited by R
DS(on)
DC Operation (T
C
= 25
C)
10
s
100
s
20
8
20
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
16
4
4
12
16
Pulse Test
0
8
12
4 V
3.5 V
V
GS
= 2.5 V
5 V
10 V
3 V
Drain Current I
D
(A)
7 V
4.5 V
10
2
5
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
8
2
1
3
4
25
C
0
4
6
V
DS
= 10 V
Pulse Test
75
C
T
C
= 25
C
2SJ172
4
2.0
4
10
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage V
DS (on)
(V)
1.6
0.4
2
6
8
0
0.8
1.2
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2 A
I
D
= 10 A
Pulse Test
5 A
5
2
50
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS (on)
(
)
2
0.1
1.0
5
20
0.5
0.5
1.0
Static Drain to Source on State
Resistance vs. Drain Current
0.2
0.05
10
10 V
V
GS
= 4 V
Pulse Test
0.5
40
160
Case Temperature T
C
(
C)
Static Drain to Source on State Resistance
R
DS (on)
(
)
0.4
0.1
0
80
120
0
0.2
0.3
Static Drain to Source on State
Resistance vs. Temperature
I
D
= 10 A
Pulse Test
5 A
2 A
10 A
5 A
2 A
40
V
GS
= 4 V
V
GS
= 10 V
50
0.5
10
Drain Current I
D
(A)
Forward Transfer Admittance
yfs
(S)
20
2
0.2
1.0
5
0.5
5
10
Forward Transfer Admittance
vs. Drain Current
T
C
= 25
C
V
GS
= 10 V
Pulse Test
0.1
1.0
2
25
C
75
C
2SJ172
5
500
1.0
20
Reverse Drain Current I
DR
(A)
Reverse Recovery Time t
rr
(ns) 200
20
0.5
2
10
5
50
100
Body to Drain Diode Reverse
Recovery Time
di/dt = 50 A/
s, Ta = 25
C
V
GS
= 0
Pulse Test
0.2
10
5
10,000
20
50
Drain to Source Voltage V
DS
(V)
Capacitance C (pF)
100
10
30
40
10
1,000
Typical Capacitance vs.
Drain to Source Voltage
0
Crss
Coss
Ciss
V
GS
= 0
f = 1 MHz
0
40
100
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
20
80
20
0
60
80
100
60
40
V
DS
10 V
0
4
16
20
12
8
V
DD
= 10 V
50 V
25 V
I
D
= 10 A
25 V
V
DD
= 50 V
V
GS
Gate to Source Voltage V
GS
(V)
500
1.0
20
Drain Current I
D
(A)
Switching Time t (ns)
200
20
0.5
2
10
5
50
100
0.2
10
5
Switching Characteristics
t
f
t
d (on)
t
r
PW = 10
s, V
GS
= 10 V
duty < 1% V
DD
30V
t
d (off)
=
.
.
2SJ172
6
20
0.8
2.0
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A) 16
0.4
1.2
1.6
8
12
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
0
4
5 V
V
GS
= 0, 5 V
10 V
D = 1
T
C
= 25
C
0.5
0.2
0.1
0.05
0.02
0.01
1 Shot Pulse
T
PW
P
DM
D =
T
PW
chc (t) =
S
(t)
chc
chc = 3.13
C/W, TC = 25
C
3
Pulse Width PW (s)
Normalized Transient Thermal Impedance
S
(t)
1.0
0.1
0.3
10
0.03
0.01
100
10 m
100 m
1
10
1 m
Normalized Transient Thermal Impedance vs. Pulse Width
Switching Time Test Circuit
Vin Monitor
Vin
10 V
50
D.U.T
Vout Monitor
R
L
V
DD
30 V
=
.
.
Waveforms
Vin
Vout
t
d (on)
10%
t
r
t
f
10%
90%
90%
10%
90%
t
d (off)
2SJ172
7
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this document without Hitachi's permission.
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other reasons during operation of the user's unit according to this document.
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performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual
property claims or other problems that may result from applications based on the examples described
herein.
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Hitachi, Ltd.
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APPLICATIONS.
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