2SC4807
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
High gain bandwidth product
f
T
= 4.4 GHz Typ
High output power
1 dB Power compression point Pcp = 24 dBm Typ at V
CE
= 5V , I
C
= 100 mA , f = 900 MHz
Outline
UPAK
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
4
1
2
3
2SC4807
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
20
V
Collector to emitter voltage
V
CEO
15
V
Emitter to base voltage
V
EBO
2
V
Collector current
I
C
200
mA
Collector power dissipation
P
C
*
1
800
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. Value on the alumina ceramics board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
20
30
--
V
I
C
= 10
A, I
E
= 0
Collector cutoff current
I
CBO
--
--
1
A
V
CB
= 15 V, I
E
= 0
I
CEO
--
--
1
mA
V
CE
= 15 V, R
BE
=
Emitter cutoff current
I
EBO
--
--
10
A
V
EB
= 2 V, I
C
= 0
DC current transfer ratio
h
FE
50
120
250
V
CE
= 5 V, I
C
= 100 mA
Collector output capacitance
Cob
--
2.8
4.0
pF
V
CB
= 5 V, I
E
= 0, f = 1 MHz
Gain bandwidth product
f
T
3.0
4.4
--
GHz
V
CE
= 5 V, I
C
= 100 mA
Power gain
PG
5.0
7.0
--
dB
V
CE
= 5 V, I
C
= 100 mA,
f = 900 MHz
Noise figure
NF
--
2.5
4.0
dB
V
CE
= 5 V, I
C
= 20 mA,
f = 900 MHz
Note:
Marking is "ER".
2SC4807
3
1600
1200
800
400
0
Ambient Temperature Ta (
C)
Collector Power Dissipation Pc (mW)
(on the alumina ceramic board)
50
100
150
200
Maximum Collector Dissipation Curve
200
160
120
80
40
0
1
Collector Current I (mA)
C
DC Current Transfer Ratio h
FE
2
5
10 20
50 100 200 500
V = 5V
CE
DC Current Transfer Ratio
vs. Collector Current
6
10
Collector Current I (mA)
C
Gain Bandwidth Product f (GHz)
T
V = 5 V
CE
5
4
3
2
1
0
20
50
100
200
500
Gain Bandwidth Product
vs. Collector Current
5.2
4.4
3.6
2.8
2.0
1.2
1
2
5
10
20
Collector Output Capacitance Cob (pF)
Collector to Base Voltage V (V)
CB
0.5
I = 0
E
f = 1 MHz
Collector Output Capacitance vs.
Collector to Base Voltage
2SC4807
4
10
8
6
4
2
0
2
Power Gain PG (dB)
Collector Current I (mA)
C
f = 900 MHz
V = 5V
CE
5
10
20
50
100
200
Power Gain vs. Collector Current
Noise Figure NF (dB)
Collector Current I (mA)
C
10
8
6
4
2
0
f = 900 MHz
V = 5V
CE
2
5
10
20
50
100
200
Noise Figure vs. Collector Current
32
24
16
8
0
Input Power Pin (dBm)
Output Power Pout (dBm)
f = 900 MHz
V = 5V
CE
I = 100 mA
C
8
16
24
32
Output Power vs. Input Power
2SC4807
5
10
5
4
3
2
1.5
1
.8
2
3
4
5
10
.6
.4
.2
0
.2
.4
.6
.8 1
1.5
.2
.4
.6 .8 1.0
2
3 4 5
Condition: V = 5 V , Zo = 50
100 to 1000 MHz (100 MHz step)
CE
(I = 20 mA)
(I = 100 mA)
C
C
1.5
10
S11 Parameter vs. Frequency
0
30
60
90
120
150
180
150
90
60
30
120
Scale: 4 / div.
Condition: V = 5 V , Zo = 50
100 to 1000 MHz (100 MHz step)
CE
(I = 20 mA)
(I = 100 mA)
C
C
S21 Parameter vs. Frequency
0
30
60
90
120
150
180
150
90
60
30
120
Scale: 0.1 / div.
Condition: V = 5 V , Zo = 50
100 to 1000 MHz (100 MHz step)
CE
(I = 20 mA)
(I = 100 mA)
C
C
S12 Parameter vs. Frequency
10
5
4
3
2
1.5
1
.8
2
3
4
5
10
.6
.4
.2
0
.2
.4
.6
.8
1
1.5
.2
.4
.6 .8 1.0
2
3 4 5
Condition: V = 5 V , Zo = 50
100 to 1000 MHz (100 MHz step)
CE
(I = 20 mA)
(I = 100 mA)
C
C
1.5
10
S22 Parameter vs. Frequency
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