2SC3322
Silicon NPN Tirple Diffused
Application
High voltage, high speed and high power switching
Outline
1. Base
2. Collector
(Flange)
3. Emitter
TO-3P
1
2
3
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
900
V
Collector to emitter voltage
V
CEO
800
V
Emitter to base voltage
V
EBO
7
V
Collector current
I
C
5
A
Collector peak current
I
C(peak)
10
A
Base current
I
B
2.5
A
Collector power dissipation
P
C
*
1
80
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. Value at T
C
= 25C.
2SC3322
2
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter sustain
voltage
V
CEO(sus)
800
--
--
V
I
C
= 0.2 A, R
BE
=
, L = 100
mH
V
CEX(sus)
800
--
--
V
I
C
= 4 A, I
B1
= 1.5 A, I
B2
= 0.8
A, V
BE
= 5.0 V, L = 180 H,
Clamped
Emitter to base breakdown
voltage
V
(BR)EBO
7
--
--
V
I
E
= 10 mA, I
C
= 0
Collector cutoff current
I
CBO
--
--
100
A
V
CB
= 750 V, I
E
= 0
I
CEO
--
--
100
A
V
CE
= 650 V, R
BE
=
DC current transfer ratio
h
FE1
15
--
--
V
CE
= 5 V, I
C
= 0.5 A*
1
h
FE2
7
--
--
V
CE
= 5 V, I
C
= 3 A*
1
Collector to emitter saturation
voltage
V
CE(sat)
--
--
1.0
V
I
C
= 1.5 A, I
B
= 0.3 A*
1
Base to emitter saturation
voltage
V
BE(sat)
--
--
1.5
V
Turn on time
t
on
--
--
1.0
s
I
C
= 3 A, I
B1
= 0.6 A,
I
B2
= 1.5 A, V
CC
250 V
Storage time
t
stg
--
--
3.0
s
Fall time
t
f
--
--
1.0
s
Note:
1. Pulse test
2SC3322
3
0
Case Temperature T
C
(
C)
Collector power dissipation Pc (W)
Maximum Collector Dissipation Curve
50
100
150
40
120
80
0.001
0.01
0.1
1.0
10
Collector to emitter Voltage V
CE
(V)
Collector Current I
C
(A)
1
3
10
30
100
300
1,000
Area of Safe Operation
25
s
50
s
250
s
1 ms
PW =
10 ms
DC Operation
(T
C
= 25
C)
i
C
(peak)
I
C
(max)
Ta = 25
C, 1 Shot Pulse
Case temperature T
C
(
C)
Collector Current derating rate (%)
0
Collector Current Derating Rate
50
100
150
20
40
60
80
100
IS/B Limit Area
0.01
0.03
0.1
0.3
1.0
3
10
Thermal resistance
j-c
(
C/W)
0.01
0.1
1.0
10 (s)
0.01
0.1
1.0
10 (ms)
Transient Thermal Resistance
Time t
10 ms10 s
10
s10 ms
2SC3322
4
0
2
4
6
8
10
Collector to emitter Voltage V
CE
(V)
Collector Current I
C
(A)
0
200
400
600
800
1,000
Reverse Bias Area of Safe Operation
850 V, 1.5 A
800 V, 4 A
600 V, 10 A
I
B2
= 0.8 A
700
800
900
1.000
Base to emitter resistance R
BE
(
)
Collector to emitter voltage V
(BR)CER
(V)
100
1 k
10 k
100 k
1 M
Collector to Emitter Voltage
vs. Base to Emitter Resistance
I
C
= 1 mA
Collector to emitter Voltage V
CE
(V)
Collector Current I
C
(A)
0
Typical Output Characteristics
1
2
3
4
5
1
2
3
4
5
T
C
= 25
C
I
B
= 0
0.05 A
0.1 A
0.2 A
0.4 A
0.6 A
0.8 A
1.0 A
Base to emitter voltage V
BE
(V)
Collector Current I
C
(A)
0
Typical Transfer Characteristics
0.4
0.8
1.2
1.6
2.0
1
2
3
4
5
T
C
= 25
C
V
CE
= 5 V
2SC3322
5
1
2
5
10
20
50
100
Collector current I
C
(A)
DC current transfer ratio h
FE
0.01 0.03
0.1
0.3
1.0
3
10
DC Current Transfer Ratio vs.
Collector Current
T
C
= 25
C
25
C
75
C
V
CE
= 5 V
0.01
0.03
0.1
0.3
1.0
3
10
Base current I
B
(A)
Collector to emitter saturation voltage
V
CE
(V)
0.01 0.03
0.1
0.3
1.0
3
10
Collector to Emitter Saturation
Voltage vs. Base Current
2.5 A
1.5 A
T
C
= 25
C
I
C
= 0.5 A
0.01
0.03
0.1
0.3
1.0
3
10
Collector current I
C
(A)
0.01 0.03
0.1
0.3
1.0
3
10
Collector to emitter saturation voltage
V
CE (sat)
(V)
Base to emitter saturation voltage
V
BE (sat)
(V)
Saturation Voltage vs. Collector Current
V
BE (sat)
V
CE (sat)
l
C
= 5 l
B
T
C
= 25
C
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