Features
l
Sensor has X-ray monitoring photodiode
l
Compactness
4.9 mm thickness excluding I/O connector part
l
High dynamic range: 12 bit
l
Long-term stability
For use under 100,000 shots
(60 kVp, 30 mR X-ray irradiation)
l
Resolution: 20 Lp/mm
l
1700 (H) 1200 (V) pixel format
l
Pixel size: 20 20 m
l
Coupled with FOS for X-ray imaging
l
100 % fill factor
l
Wide dynamic range
l
Low dark signal
l
Low readout noise
l
MPP operation
Applications
l
General X-ray imaging
l
Non-destructive inspection
l
Intra-oral X-ray imaging in dental diagnosis
I M A G E S E N S O R
CCD area image sensor
Front-illuminated FFT-CCDs for X-ray imaging
S8984, S8985
PRELIMINARY DATA
Mar. 2003
S8984 is an FFT-CCD image sensor ideal for intra-oral X-ray imaging in dental diagnosis. S8984 has about 2 mega (1700 1200) pixels each of
which is
o
20 m. The fiber optic plate (FOP) used as an input window is as thin as 1.5 mm but highly resistant to X-ray irradiation, making S8984
very reliable even over a long-term operation. The scintillator coated on the FOP is optimized to have high X-ray sensitivity and high resolution (20
Lp/mm).
S8985 is an easy-to-use X-ray imaging module using S8984, with added functions such as a cable assembly and X-ray trigger circuit. S8985 is
pin compatible with S8980 (number of pixels is increased). Note: these parts are not registered with the FDA.
1
I Selection guide
Type No.
Cooling
Number of
total pixels
Number of
active pixels
Active area
[mm (H) mm (V)]
S8984
S8985
Non-cooled
1708 1202
1700 1200
34 24
I General ratings
Parameter
S8984
S8985
CCD structure
Full frame transfer
Fill factor
100 %
Number of active pixels
1700 (H) 1200 (V)
Pixel size
20 (H) 20 (V) m
Active area
34 (H) 24 (V) mm
Vertical clock phase
2 phase
Horizontal clock phase
2 phase
Output circuit
Emitter follower without load resistance
Dimensional outline
35.5 (H) 23.2 (V) mm
42.5 (H) 30.5 (V) mm
Reliability
100,000 shots at 60 kVp, 30 m Roentgen
Window
Scintillator on 1.5 mm FOP
Other
MPP mode (low dark current operation)
CCD area image sensor
S8984, S8985
2
I Absolute maximum ratings (Ta=25 C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Storage temperature
Tstg
-10
-
+70
C
Operating temperature
Topr
0
-
+40
C
OD voltage
V
OD
-0.5
-
+20
V
RD voltage
V
RD
-0.5
-
+18
V
SG voltage
V
SG
-10
-
+15
V
OG voltage
V
OG
-10
-
+15
V
RG voltage
V
RG
-10
-
+15
V
TG voltage
V
TG
-10
-
+15
V
Vertical clock voltage
V
P1V
, V
P2V
-10
-
+15
V
Horizontal clock voltage
V
P1H
, V
P2H
-10
-
+15
V
Vcc voltage
Vcc
0
-
+7
V
I Operating conditions (MPP mode, Ta=25 C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Output transistor drain voltage
V
OD
12
15
-
V
Reset drain voltage
V
RD
12
13
14
V
Output gate voltage
V
OG
-0.5
2
5
V
Substrate voltage
Vss
-
0
-
V
High
V
P1VH
, V
P2VH
0
3
6
V
Vertical shift register
clock voltage
Low
V
P1VL
, V
P2VL
-9
-8
-7
V
High
V
P1HH
, V
P2HH
0
3
6
V
Horizontal shift register
clock voltage
Low
V
P1HL
, V
P2HL
-9
-8
-7
V
High
Vs
GH
0
3
6
V
Summing gate voltage
Low
Vs
GL
-9
-8
-7
V
High
V
RGH
0
3
6
V
Reset gate voltage
Low
V
RGL
-9
-8
-7
V
High
V
TGH
0
3
6
V
Transfer gate voltage
Low
V
TGL
-9
-8
-7
V
+5 V power supply voltage
Vcc
4.75
5
5.25
V
I Electrical characteristics (Ta=25 C)
Parameter
Symbol
Remark
Min.
Typ.
Max.
Unit
Signal output frequency
fc
*
1
-
1
5
MHz
Vertical shift register capacitance
C
P1
v, C
P2
v
-
70,000
-
pF
Horizontal shift register capacitance
C
P1H
, C
P2H
-
400
-
pF
Summing gate capacitance
Cs
G
-
20
-
pF
Reset gate capacitance
C
RG
-
20
-
pF
Transfer gate capacitance
C
TG
-
250
-
pF
Charge transfer efficiency
CTE
*
2
0.99995
0.99998
-
-
DC output level
V
O
ut
*
3
5
8
11
V
Output impedance
Zo
*
3
-
500
-
W
Power dissipation
P
*
3
*
4
-
75
-
mW
S8984
-
1
-
+5 V power supply current
S8985
Icc
-
2
-
mA
*1: S8984 only. In case of S8985, maximum frequency is strongly depend on peripheral circuit and cable length.
*2: Measured at half of the full well capacity. CTE is defined per pixel.
*3: V
OD
=15 V
*4: Power dissipation of the on-chip amplifier.
CCD area image sensor
S8984, S8985
......
......
1
VS1
VS2
VS3
VS4
VS999
VS1000
VS1001
VS1002
2
3
1696
1697
1698
1699
1700
23
1199
1198
1200
D1
D2
S1
S2
S3
S4
S5
S6
S1699
S1700
S1701
S1702
S1703
S1704
D3
D4
......
X-RAY IRRADIATION
MONITORING PHOTODIODE
PD
P1V'
P2V'
TG'
SS
RG'
OG
SG'
P1H'
P2H'
OS
OD
RD
3
I Electrical and optical characteristics (Ta=25 C, unless otherwise noted, V
OD
=15 V)
Parameter
Symbol
Remark
Min.
Typ.
Max.
Unit
Vertical
100
200
-
Horizontal
-
300
-
Full well capacity
Summing
Fw
-
600
-
ke
-
CCD node sensitivity
Sv
*
2
1.0
1.4
-
V/e
-
Dark current
DS
*
3
-
250
2,500
e
-
/pixel/s
Readout noise
Nr
*
4
-
60
-
e
-
rms
Dynamic range
DR
*
5
-
3,333
-
-
X-ray response non-uniformity
XRNU
*
6,
*
7
-
10
30
%
White spots
-
-
100
Point
defects *
9
Black spots
-
-
100
Cluster defects
*
10
-
-
10
Blemish *
8
Column defects
-
*
11
-
-
2
-
X-ray resolution
DR
*
6
15
20
-
Lp/mm
*2: V
OD
=15 V, R
L
(load resistance of emitter follower)=1 kW.
*3: Dark signal doubles for every 5 to 7 C.
*4: -40 C, operating frequency is 1 MHz.
*5: Dynamic range = Full well capacity / Readout noise
*6: X-ray irradiation of 60 kVp, measured at half of the full well capacity.
*7: XRNU (%) = Noise / Signal 100
Noise: Fixed pattern noise (peak to peak)
In the range that excludes 5 pixels from edges to the center at every position.
*8: Refer to Characteristics and use of FFT-CCD area image sensor of technical information.
*9: White spots > 20 times of typ. Dark signal (2.5 ke
-
/pixel/s).
Black spots > 50 % reduction in response relative to adjacent pixels, measured at half of the full well capacity.
*10: continuous 2 to 9 point defects.
*11: continuous > 10 point defects.
I
Device structure
KMPDC0170EA
I Pixel format
Left Horizontal Direction Right
Blank
Optical
black
Isolation
Effective
Isolation
Optical
black
Blank
2
2
1
1700
1
0
2
Top Vertical direction Bottom
Isolation
Effective
Isolation
1
1200
1
CCD area image sensor
S8984, S8985
X-RAY
EXPOSURE
Trigger
P1V
P2V, TG *
P1H
P2H, SG
RG
OUT
* TG terminal can be short-circuited to P2V terminal.
P2V, TG
P1H
P2H, SG
RG
OUT
Tpwv
PRE-INTEGRATION PERIOD
INTEGRATION PERIOD
READOUT PERIOD
1
VD1
2, 3, ... , 1199, 1200, VD2
VD: VERTICAL DUMMY
ENLARGED VIEW
Tovr
Tpwh, Tpws
Tpwr
D1
D2
S1
S2, S3, S4, ... , S1702, S1703, S1704
D3
D4
4
I
Timing chart
KMPDC0172EA
Parameter
Symbol
Remark
Min.
Typ.
Max.
Unit
Pulse width
tpwv
*
12
30
-
-
s
P1V, P2V, TG
Rise and fall time
tprv, tpfv
200
-
-
ns
Pulse width
tpwh
100
-
-
ns
Rise and fall time
tprh, tpfh
*
12
5
-
-
ns
P1H, P2H
Duty ratio
-
50
-
%
Pulse width
tpws
100
-
-
ns
Rise and fall time
tprs, tpfs
3
-
-
ns
SG
Duty ratio
-
50
-
%
Pulse width
tpwr
10
-
-
ns
RG
Rise and fall time
tprr, tpfr
3
-
-
ns
TG-P1H
Overlap time
tovr
18
-
-
s
*12: Symmetrical pulses should be overlapped at 50 % of maximum amplitude.
I
On-board circuit
P1V
OD
RD
Vcc
P2V
TG
P1H
P2H
SG
RG
P1V'
51 k
2.2
2.2
7.5 k
10 k
2SC4081UMT
molex 52745-1417
0.1
P2V'
TG'
P1H'
SS
CCD CHIP
OD
OG
RD
OS
PD
100
10
10
10
10
10
10
P2H'
SG'
RG'
Vcc
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Trigger A
SG
P2H
P1H
Reserve
RG
RD
OD
OUT
GND
TG
P2V
P1V
OUT
Trigger A
Trigger B
(S8984)
(S8985)
KMPDC0171EA
CCD area image sensor
S8984, S8985
I
Dimensional outline (unit: mm)
KMPDA0175EB
5
S8984
I Pin connections (Connector on CCD package)
Pin No.
Symbol
Description
Remark
1
Vcc
Analog power +5 V
2
Trigger A
Trigger A output
3
PSG
Summing gate
4
P2H
CCD horizontal serial clock-2
5
P1H
CCD horizontal register clock-1
6
Reserve
Should be opened
7
PRG
Reset gate
8
VRD
Reset drain
9
VOD
Output transistor drain
10
OUT
Signal output
11
GND
Ground
12
PTG
Transfer gate
13
P2V
CCD vertical register clock-2
14
P1V
CCD vertical register clock-1
26.5
6.55
24
FOP
1.5
2.0
3.1 0.3
1.0
1.5
C1.0
34.0
ACTIVE AREA
3.6
3.0
24.0
FOP
26.4
0.55
0.55
27.5 0.4
FOP
35.5
39.5 0.5
molex
52745-1417
1
14
1.9
1.0
SCINTILLATOR
CONNECTOR
FOP
ALUMINA SUBSTRATE
Cu-W (0.5 t)
CCD CHIP
CCD area image sensor
S8984, S8985
KMPDA0177EA
10.5
4.0
34.0
5.1
ACTIVE AREA
3.4
(4 ) R2.5
4.0
1.0
1.3
24.0
30.5
3.25
3.25
3.5
4.9
7.2
10.0
9.0
42.5
29.5
13.0
CABLE
3.5
1.5
2.3
4.9
8.7
R2.0
R2.0
6.0
1.3
4.8
(30)
6
I
Dimensional outlines (unit: mm)
S8985
G
Entire view
G
CCD sensor
KMPDA0176EA
2000
CABLE
MDR CONNECTOR
(3M 10136-3000VE; 36 TERMINALS)
CCD SENSOR
PIN No.1
2
17 18
19 20
35 36
KMPDA0177EA
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2003 Hamamatsu Photonics K.K.
Cat. No. KMPD1076E03
Apr. 2003 DN
CCD area image sensor
S8984, S8985
7
I Pin connections
Pin No.
Symbol
Description
Remark
1
GND
Ground
2
Vcc
+5 V power supply
3
SG
Summing gate
Same timing as P2H
4
Trigger B Trigger B output
5
RG
Reset gate
6
NC
7
Should be opened
8
NC
9
RD
Reset drain
10
NC
11
OD
Output transistor drain
12
NC
13
OUT
Sensor output
14
NC
15
GND
Ground
16
NC
17
P1V
CCD vertical register clock-1
18
Reserve
Should be opened
19
Reserve
Should be opened
20
P2H
CCD horizontal register clock-2
21
NC
22
P1H
CCD horizontal register clock-1
23
NC
24
GND
Ground
25
NC
26
RD
Reset drain
27
NC
28
OD
Output transistor drain
29
NC
30
GND
Ground
31
NC
32
OUT
Sensor output
33
NC
34
P2V
CCD vertical register clock-2
35
NC
36
TG
Transfer gate
Same timing as P2V
I
Precautions for use (Electrostatic countermeasures)
*Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with
an earth ring, in order to prevent electrostatic damage due to electrical charges from friction.
*Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.
*Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to dis-
charge.
*Ground the tools used to handle these sensors, such as tweezers and soldering irons.
It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to
the amount of damage that occurs.
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