S7998 is a UV to near IR detector using a 3 3 mm photodiode integrated with preamplifier. The photodiode chip and the preamplifier are
assembled at high density by direct bump connections. The preamplifier bias current is so small that a high feedback resistance of 1 G
can be
used. Built-in feedback resistance types and metal package types are also available upon request.
Features
l Compact ceramic package: 13.2 7.37 mm
l Uses a UV to near IR Si photodiode (3 3 mm)
for high-precision photometry
l Uses a low bias current preamplifier: Ib=64 pA Max.
l Low noise
l Low current consumption
Applications
l Precision photometry
l General photometry
P H O T O D I O D E
Si photodiode with preamp
Photodiode (3 3 mm)/preamplifier assembly in compact package
S7998
I Absolute maximum ratings (Ta=25 C)
Parameter
Symbol
Value
Unit
Preamp supply voltage
Vcc
6
V
Photodiode reverse voltage
V
R
5
V
Operating temperature
Topr
-20 to +60
C
Storage temperature
Tstg
-20 to +80
C
I Electrical and optical characteristics of photodiode (Ta=25 C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Spectral response range
l
-
190 to 1100
-
nm
Peak sensitivity wavelength
lp
-
880
-
nm
l=200 nm
0.1
0.12
-
A/W
Photo sensitivity
S
l=lp
-
0
.43
-
A/W
Dark current
I
D
V
R
=10 mV
-
50
250
pA
Shunt resistance
Rsh
V
R
=10 mV
-
0.2
-
GW
Terminal capacitance
Ct
V
R
=0 V, f=10 kHz
-
120
-
pF
I Electrical and optical characteristics of preamp (Ta=25 C, Vcc=5 V)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Input offset voltage
Vos
-
0.7
5
mV
Input offset voltage temperature drift
DVos
-
4
-
V/C
Input bias current
Ib
1
64
pA
Input offset current
Ios
-
0.5
32
pA
Output voltage amplitude
Vo
R
L
=2 kW
4.8
4.9
-
V
Gain bandwidth
GBW
-
1.3
-
MHz
Equivalent noise input voltage
Vn
f=10 kHz
-
33
-
nVrms/Hz
1/2
Equivalent noise input current
In
f=10 kHz
-
1.5
-
fA/Hz
1/2
Supply current
Icc
-
1.3
1.7
mA
1
Si photodiode with preamp
S7998
0.001
0.01
0.1
1
10
100
0.01
0.1
1
10
100
10000
1000
FREQUENCY (kHz)
OUTPUT NOISE DENSITY (Vrms/Hz
1/2
)
(Typ. Ta=25 C)
Rf=100 k
Cf=200 pF
(EXTERNALLY CONNECTED)
Rf=10 M
Cf=10 pF
(EXTERNALLY
CONNECTED)
Rf=1 G
Cf=0.5 pF
(EXTERNALLY
CONNECTED)
10
1
10
2
10
3
10
4
10
5
10
7
0.01
0.1
1
10
100
10000
1000
FREQUENCY (kHz)
NOISE EQUIVALENT POWER NEP (fW/Hz
1/2
)
(Typ. Ta=25 C)
10
6
Rf=1 G
, Cf=0.5 pF (EXTERNALLY CONNECTED)
Rf=10 M
, Cf=10 pF (EXTERNALLY CONNECTED)
Rf=100 k
Cf=200 pF
(EXTERNALLY
CONNECTED)
I Spectral response (photodiode only)
0
0.1
0.2
0.3
0.4
0.7
190
400
600
800
1200
1000
WAVELENGTH (nm)
PHOTO SENSITIVITY
(A/W)
(Typ. Ta=25 C)
0.5
0.6
I Frequency response
-50
-40
-30
-20
-10
10
0.01
0.1
1
10
100
10000
1000
FREQUENCY (kHz)
RELATIVE OUTPUT (dB)
(Typ. Ta=25 C)
0
Rf=1 G
Cf=0.5 pF
(EXTERNALLY
CONNECTED)
Rf=100 k
Cf=200 pF
(EXTERNALLY
CONNECTED)
Rf=10 M
Cf=10 pF
(EXTERNALLY
CONNECTED)
I Output noise characteristics
I Noise equivalent power vs. frequency
KSPDB0191EA
KSPDB0192EA
KSPDB0193EA
KSPDB0194EA
2
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2003 Hamamatsu Photonics K.K.
Cat. No. KSPD1053E0
2
Feb. 2003 DN
Si photodiode with preamp
S7998
3.0
(2.16)
0.25 0.1
(4.5)
2.54 0.15
0.46 0.1
P 2.54 3 =7.62
0.905
0.89 0.3
3.0
(4.02)
7.37 0.2
7.62 0.3
(SPECIFIED AT THE LEAD ROOT)
(5.2)
13.2 0.2
(0.9)
PHOTOSENSITIVE
SURFACE
CATHODE
SL
Vcc+
OUT
SD
Vcc-
+IN
-IN (PD A)
GLASS
12.2 7.2 5.0
PREAMP
ACTIVE AREA
KSPDC0040EA
KSPDA0147EA
PACKAGE
0.1 F
Vcc-
0.1 F
Vcc+
-
+
R
L
Cf
Rf
I Dimensional outline (unit: mm)
I Application circuit example
G ESD
S7998 may be damaged or their performance may deteriorate by such factors as electro static discharge from the human
body, surge voltages from measurement equipment, leakage voltages from soldering irons and packing materials, etc. As a
countermeasure against electro static discharge, the device, operator, work place and measuring jigs must all be set at the
same potential. The following precautions must be observed during use:
To protect the device from electro static discharge which accumulate on the operator or the operator's clothes, use a wrist
strap or similar tools to ground the operator's body via a high impedance resistor (1 M
).
A semiconductive sheet (1 M
to 100 M) should be laid on both the work table and the floor in the work area.
When soldering, use an electrically grounded soldering iron with an isolation resistance of more than 10 M
.
For containers and packing, use of a conductive material or aluminum foil is effective. When using an antistatic material, use
one with a resistance of 0.1 M
/cm
2
to 1 G
/cm
2.
G Wiring
If electric current or voltage is applied in reverse polarity to an electronic device such as a preamplifier, this can degrade
device performance or destroy the device. Always check the wiring and dimensional
outline to avoid misconnection.
Precautions for use
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