S7033/S7034 series are families of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications.
S7033/S7034 series feature large full-well capacity in horizontal CCD register. By using the binning operation, S7033/S7034 series can be used
as a linear image sensor having a long height. This makes S7033/S7034 series ideally suited for use in spectrophotometry. The binning operation
offers significant improvement in S/N and signal processing speed compared with conventional methods by which signals are digitally added by
an external circuit.
S7033/S7034 series have an effective pixel size of 24 24
m and are available in image areas ranging from 12.288 (H) 2.928 (V) mm
2
(S7033-0907, S7034-0907) up to a large image area of 24.576 (H) 2.928 (V) mm
2
(S7033-1007, S7034-1007).
Either one-stage or two-stage thermoelectric cooler is built into the package (S7034/S7035 series). At room temperature operation, the
device can be cooled down to -10 C by one-stage cooler and -30 C by two-stage cooler respectively without using any other cooling technique.
In addition since both the CCD chip and the thermoelectric cooler are hermetically sealed, no dry air is required, thus allowing easy handling.
Features
l Line, pixel binning
l Greater than 90 % quantum efficiency at peak sensitivity
wavelength
l Wide spectral range
l Wide dynamic range
l MPP operation
l Built-in thermoelectric cooler
Applications
l Fluorescence spectrometer, ICP
l Raman spectrometer
l Industrial inspection requiring
l Semiconductor inspection
l DNA sequencer
l Low-light-level detection
I M A G E S E N S O R
CCD area image sensor
Back-thinned FFT-CCD
S7033/S7034 series
I Selection guide
Type No.
Cooling
Number of total
pixels
Number of active
pixels
Active area
[mm (H) mm (V)]
Suitable
multichannel
detector head
S7033-0907
532 128
512 122
12.288 2.928
S7033-1007
Non-cooled
1044 128
1024 122
24.576 2.928
C7043
S7034-0907
532 128
512 122
12.288 2.928
S7034-1007
One-stage
TE-cooled
1044 128
1024 122
24.576 2.928
C7044
Note) Two-stage TE-cooled type (S7035 series) is also available
I General ratings
Parameter
S7033 series
S7034 series
Pixel size
24 (H) 24 (V) m
Vertical clock phase
2 phase
Horizontal clock phase
2 phase
Output circuit
One-stage MOSFET source follower
Package
24 pin ceramic DIP (refer to dimensional outlines)
Built-in cooler
-
One-stage
Window
Quartz glass *
*1: Window-less and sapphire glass are available upon request
1
CCD area image sensor
S7033/S7034 series
I E lectrical characteristics (Ta=25 C )
P aram eter
S ym bol
M in.
Typ.
M ax.
U nit
S ignal output frequency
fc
-
-
1
M H z
C harge transfer efficie ncy *
2
C TE
0.99995
0.99999
-
-
D C output level *
3
V out
12
15
18
V
Output im pedance *
3
Z o
-
3
-
kW
P ow er consum ption *
3
*
4
P
-
15
-
m W
*2: C harge transfer efficie ncy per pixel, m easured at half of the full w ell capacity.
*3: The values depend on the load resistance. (Typical, V
O D
=20 V, Load resistanc e=22 kW )
*4: P ow er consum ptio n of the on-chip am plifier.
I E lectrical and optica l characteristics (Ta=25 C , unless otherw ise noted)
P aram eter
S ym bol
M in.
Typ.
M ax.
U nit
S aturation output voltag e
V sat
-
F w S v
-
V
V ertical
150,000
300,000
-
F ull w ell capacity
H orizontal
F w
1,350,000
2,700,000
-
e
-
C C D node sensitivity
S v
0.5
0.6
-
V /e
-
25 C
-
4,000
12,000
D ark current *
5
(M P P m ode)
0 C
D S
-
200
600
e
-
/pixel/s
R eadout noise *
6
N r
-
30
-
e
-
rm s
Line binning
22,500
90,000
-
D ynam ic range *
7
A rea scanning
D R
2,500
10,000
-
-
P hoto response non-u niform ity *
8
P R N U
-
3
10
%
S pectral response ran ge
l
-
200 to 1100
-
nm
*5: D ark current nearly d oubles for every 5 to 7 C increase in tem perature .
*6: Operating frequency is 150 kH z.
*7: D ynam ic range (D R )=F ull w ell/R eadout noise.
*8: M easured at the half of the full w ell capacity output.
I Absolute m axim um ratings (Ta=25 C )
Param eter
Sym bol
Min.
Typ.
Max.
Unit
O perating tem perature
Topr
-50
-
+30
C
Storage tem perature
Tstg
-50
-
+70
C
O D voltage
V
OD
-0.5
-
+25
V
RD voltage
V
RD
-0.5
-
+18
V
ISV voltage
V
ISV
-0.5
-
+18
V
ISH voltage
V
ISH
-0.5
-
+18
V
IG V voltage
V
IG1V
, V
IG2V
-10
-
+15
V
IG H voltage
V
IG1H
, V
IG2H
-10
-
+15
V
SG voltage
V
SG
-10
-
+15
V
O G voltage
V
OG
-10
-
+15
V
RG voltage
V
RG
-10
-
+15
V
TG voltage
V
TG
-10
-
+15
V
Vertical clock voltage
V
P1V
, V
P2V
-10
-
+15
V
Horizontal clock voltage
V
P1H
, V
P2H
-10
-
+15
V
I O perating conditions (M PP m ode, Ta=25 C )
Param eter
Sym bol
Min.
Typ.
Max.
Unit
O utput transistor drain voltage
V
OD
18
20
22
V
Reset drain voltage
V
RD
11.5
12
12.5
V
O utput gate voltage
V
OG
1
3
5
V
Substrate voltage
V
SS
-
0
-
V
Test point (vertical input source)
V
ISV
-
V
RD
-
V
Test point (horizontal input source)
V
ISH
-
V
RD
-
V
Test point (vertical input gate)
V
IG1V
, V
IG2V
-8
0
-
V
Test point (horizontal input gate)
V
IG1H
, V
IG2H
-8
0
-
V
High
V
P1VH
, V
P2VH
4
6
8
Vertical shift register
clock voltage
Low
V
P1VL
, V
P2VL
-9
-8
-7
V
High
V
P1HH
, V
P2HH
4
6
8
Horizontal shift register
clock voltage
Low
V
P1HL
, V
P2HL
-9
-8
-7
V
High
V
SGH
4
6
8
Sum m ing gate voltage
Low
V
SGL
-9
-8
-7
V
High
V
RGH
4
6
8
Reset gate voltage
Low
V
RGL
-9
-8
-7
V
High
V
TGH
4
6
8
Transfer gate voltage
Low
V
TGL
-9
-8
-7
V
2
Fixed pattem noise (peak to peak)
Signal
100
Photo response non-unifomity (PRNU) [%]
CCD area image sensor
S7033/S7034 series
QUANTUM EFFICIENCY (%)
WAVELENGTH (nm)
(Typ. Ta=25 C)
0
200
400
600
800
1000
1200
10
20
30
40
50
60
70
80
90
100
FRONT-SIDED
FRONT-SIDED
(UV COAT)
BACK-THINNED
*9: Spectral response with quartz glass (or sapphire) is
decreased by the transmittance
I Spectral response (without window)
*9
I Spectral transmittance characteristics of window material
KMPDB0058EA
0
10
100
200
WAVELENGTH (nm)
TRANSMITTANCE (%)
300
400
500
600
700
800
900 1000
20
30
40
50
60
70
80
90
100
(Typ. Ta=25 C)
QUARTZ WINDOW
SAPPHIRE WINDOW
KMPDB0101EA
I Dark current vs. temperature
-50
-40
-30
-20
0
-10
10
20
30
TEMPERATURE (C)
0.1
1
10
100
1000
10000
DARK CURRENT (e
-
/pixel/s)
(Typ.)
KMPDB0037EB
G Window material
Type No.
Window material
S7033/S7034
series
Quartz glass *
(option: window-less,
sapphire glass *
)
S7035 series
(two-stage TE-
cooled type)
Sapphire glass *
(option: window-less)
*10: Resin sealing
*11: Hermetic sealing
3
CCD area image sensor
S7033/S7034 series
I Device structure
23
22
21
20
14
15
24
1
2
12
11
8
9
3
4
5
2 BEVEL
SIGNAL OUT
2
n
4 BLANK
4 BLANK
V=122
H=512, 1024
4 BEVEL
THINNING
THINNING
1 2 3 4 5
2
3
4
5
V
H
6 BEVEL
6 BEVEL
13
10
2
n
SIGNAL OUT
KMPDC0076EA
INTEGRATION PERIOD
(Shutter must be open)
VERTICAL BINNING PERIOD
(Shutter must be closed)
P1V
P2V, TG
P1H
P2H, SG
READOUT PERIOD (Shutter must be closed)
3..126
127
128
122 + 6 (BEVEL)
Tpwv
Tovr
Tpwh, Tpws
Tpwr
1
2
3
531
1043
532
1044
4..530
4..1042
: S703*-0907
: S703*-1007
1
2
D19
D2
D1
D20
D3..D10, S1..S1024, D11..D18
RG
OS
S1..S512
: S703*-0907
: S703*-1007
I Timing chart
KMPDC0128EA
Parameter
Symbol
Remark
Min.
Typ.
Max.
Unit
Pulse width
Tpwv
6 *
!
-
-
s
P1V, P2V, TG
Rise and fall time
Tprv, Tpfv
*
200
-
-
ns
Pulse width
Tpwh
500
-
-
ns
Rise and fall time
Tprh, Tpfh
10
-
-
ns
P1H, P2H
Duty ratio
-
*
-
50
-
%
Pulse width
Tpws
500
-
-
ns
Rise and fall time
Tprs, Tpfs
10
-
-
ns
SG
Duty ratio
-
-
-
50
-
%
Pulse width
Tpwr
100
-
-
ns
RG
Rise and fall time
Tprr, Tpfr
-
5
-
-
ns
TG P1H
Overlap time
Tovr
-
3
-
-
s
*12: Symmetrical pulses should be overlapped at 50 % of maximum amplitude.
*13: In case of S7033/S7034-1007.
4
Line binning
CCD area image sensor
S7033/S7034 series
INTEGRATION PERIOD
(Shutter must be open)
P1V
RG
OS
P2V, TG
P1H
P2H, SG
READOUT PERIOD (Shutter must be closed)
ENLARGED VIEW
4..127 128
122 + 6 (BEVEL)
Tpwv
Tovr
Tpwr
D1
D2
D3
D4
D18
D19
D20
D5..D10, S1..S1024, D11..D17
P2V, TG
P1H
P2H, SG
RG
OS
Tpwh, Tpws
1
2
3
S1..S512
: S703*-0907
: S703*-1007
KMPDC0129EA
INTEGRATION PERIOD
(Shutter must be open)
P1V
RG
OS
P2V, TG
P1H
P2H, SG
READOUT PERIOD (Shutter must be closed)
ENLARGED VIEW
4..127 128
122 + 6 (BEVEL)
Tpwv
Tovr
Tpwr
D1
D2
D3
D4
D18
D19
D20
D5..D10, S1..S1024, D11..D17
P2V, TG
P1H
P2H, SG
RG
OS
Tpwh, Tpws
1
2
3
S1..S512
: S703*-0907
: S703*-1007
KMPDC0130EA
Parameter
Symbol
Remark
Min.
Typ.
Max.
Unit
Pulse width
Tpwv
6 *
15
-
-
s
P1V, P2V, TG
Rise and fall time
Tprv, Tpfv
*
14
200
-
-
ns
Pulse width
Tpwh
500
-
-
ns
Rise and fall time
Tprh, pfh
10
-
-
ns
P1H, P2H
Duty ratio
-
*
14
-
50
-
%
Pulse width
Tpws
500
-
-
ns
Rise and fall time
Tprs, Tpfs
10
-
-
ns
SG
Duty ratio
-
-
-
50
-
%
Pulse width
Tpwr
100
-
-
ns
RG
Rise and fall time
Tprr, Tpfr
-
5
-
-
ns
TG P1H
Overlap time
Tovr
-
3
-
-
s
*14: Symmetrical pulses should be overlapped at 50 % of maximum amplitude.
*15: In case of S7033/S7034-1007.
Area scanning 1: low dark current mode
Area scanning 2: large full well mode
5
CCD area image sensor
S7033/S7034 series
I Dimensional outlines (unit: mm)
KMPDA0080EB
S7033-0907
S7033-1007
WINDOW 16.3
8.2
34.0
2.54
22.9
22.4
A
ACTIVE AREA
12.288
S7033-0907: A=2.928
4.4
4.8
2.4
3.8
PHOTOSENSITIVE SURFACE
1st PIN INDICATION PAD
3.0
(24 ) 0.5
KMPDA0081EB
WINDOW 28.6
22.9
22.4
ACTIVE AREA 24.576
B
8.2
44.0
2.54
S7033-1007: B=2.928
3.0
PHOTOSENSITIVE SURFACE
4.4
2.4
4.8
3.8
1st PIN INDICATION PAD
(24 ) 0.5
KMPDA0082EB
S7034-0907
S7034-1007
KMPDA0083EB
WINDOW 16.3
8.2
34.0
50.0
2.54
22.9
19.0
4.0
42.0
22.4
A
7.3
1.0
7.7
6.7
4.8
ACTIVE AREA
12.288
PHOTOSENSITIVE SURFACE
1st PIN INDICATION PAD
3.0
TE-COOLER
S7034-0907: A=2.928
(24 ) 0.5
(24 ) 0.5
7.3
1.0
3.0
6.7
4.8
PHOTOSENSITIVE SURFACE
7.7
1st PIN INDICATION PAD
B
4.0
19.0
22.4
22.9
44.0
52.0
60.0
2.54
WINDOW 28.6
ACTIVE AREA 24.576
8.2
S7034-1007: B=2.928
TE-COOLER
Parameter
Symbol
Remark
Min.
Typ.
Max.
Unit
Pulse width
Tpwv
6 *
17
-
-
s
P1V, P2V, TG
Rise and fall time
Tprv, Tpfv
*
16
200
-
-
ns
Pulse width
Tpwh
500
-
-
ns
Rise and fall time
Tprh, Tpfh
10
-
-
ns
P1H, P2H
Duty ratio
-
*
16
-
50
-
%
Pulse width
Tpws
500
-
-
ns
Rise and fall time
Tprs, Tpfs
10
-
-
ns
SG
Duty ratio
-
-
-
50
-
%
Pulse width
Tpwr
100
-
-
ns
RG
Rise and fall time
Tprr, Tpfr
-
5
-
-
ns
TG - P1H
Overlap time
Tovr
-
3
-
-
s
*16: Symmetrical pulses should be overlapped at 50 % of maximum amplitude.
*17: In case of S7033/S7034-1007.
6
CCD area image sensor
S7033/S7034 series
I Pin connections
S7033 series
S7034 series
Pin
No.
Symbol
Function
Symbol
Function
Remark
(standard operation)
1
RD
Reset drain
RD
Reset drain
+12 V
2
OS
Output transistor source
OS
Output transistor source
R
L
=10 k to 100 k9
3
OD
Output transistor drain
OD
Output transistor drain
+20 V
4
OG
Output gate
OG
Output gate
+3 V
5
SG
Summing gate
SG
Summing gate
Same pulse as P2H
6
-
-
7
-
-
8
P2H
CCD horizontal register clock-2
P2H
CCD horizontal register clock-2
9
P1H
CCD horizontal register clock-1
P1H
CCD horizontal register clock-1
10
IG2H
Test point (horizontal input gate-2)
IG2H
Test point (horizontal input gate-2)
0 V
11
IG1H
Test point (horizontal input gate-1)
IG1H
Test point (horizontal input gate-1)
0 V
12
ISH
Test point (horizontal input source)
ISH
Test point (horizontal input source)
Connect to RD
13
TG *
&
Transfer gate
TG *
#
Transfer gate
Same pulse as P2V
14
P2V
CCD vertical register clock-2
P2V
CCD vertical register clock-2
15
P1VCCD vertical register clock-1
P1V CCD vertical register clock-1
16
-
Th1
Thermistor
17
-
Th2
Thermistor
18
-
P-
TE-cooler-
19
-
P+
TE-cooler+
20
SS
Substrate (GND)
SS
Substrate (GND)
GND
21
ISVTest point (vertical input source)
ISV Test point (vertical input source)
Connect to RD
22
IG2V
Test point (vertical input gate-2)
IG2V
Test point (vertical input gate-2)
0 V
23
IG1VTest point (vertical input gate-1)
IG1V Test point (vertical input gate-1)
0 V
24
RG
Reset gate
RG
Reset gate
*18: Isolation gate between vertical register and horizontal register.
In standard operation, TG should be applied the same pulse as P2V.
I Specifications of built-in TE-cooler (Typ.)
Parameter
Symbol
Condition
S7034-0907
S7034-1007
Unit
Internal resistance
Rint
Ta=25 C
2.5
1.2
9
Maximum current *
19
Imax Tc *
20
=Th *
21
=25 C
1.5
3.0
A
Maximum voltage
Vmax Tc *
20
=Th *
21
=25 C
3.8
3.6
V
Maximum heat absorption*
22
Qmax
3.4
5.1
W
Maximum temperature
of heat radiating side
-
70
70
C
*19: Maximum current Imax:
If the current greater than this value flows into the thermoelectric cooler, the heat absorption begins to decrease due to the
Joule heat. It should be noted that this value is not the damage threshold value. To protect the thermoelectric cooler and
maintain stable operation, the supply current should be less than 60 % of this maximum current.
*20: Temperature of the cooling side of thermoelectric cooler.
*21: Temperature of the heat radiating side of thermoelectric cooler.
*22: Maximum heat absorption Qmax.
This is a theoretical heat absorption level that offsets the temperature difference in the thermoelectric cooler when the
maximum current is supplied to the unit.
0
1
2
3
V
O
L
T
A
GE (V)
CCD TEMPERA
TURE
(
C)
4
7
6
5
-40
-30
4
3
2
CURRENT (A)
1
0
-20
-10
0
10
20
30
(Typ. Ta=25 C)
VOLTAGE vs. CURRENT
CCD TEMPERATURE vs. CURRENT
0
1
2
3
V
O
L
T
A
GE (V)
CCD TEMPERA
TURE
(
C)
4
7
6
5
-40
-30
2.0
1.5
1.0
CURRENT (A)
0.5
0
-20
-10
0
10
20
30
(Typ. Ta=25 C)
VOLTAGE vs. CURRENT
CCD TEMPERATURE vs. CURRENT
KMPDB0178EA
KMPDB0179EA
S7034-0907
S7034-1007
7
CCD area image sensor
S7033/S7034 series
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2003 Hamamatsu Photonics K.K.
Input
Symbol
Value
Supply voltage
V
D1
V
A1+
V
A1-
V
A2
V
D2
Vp
V
F
+5 Vdc, 200 mA
+15 Vdc, +100 mA
-15 Vdc, -100 mA
+24 Vdc, 30 mA
+5 Vdc, 30 mA (C7044)
+5 Vdc, 2.5 A (C7044)
+12 Vdc, 100 mA (C7044)
Master start
Bms
HCMOS logic compatible
Master clock
Bmc
HCMOS logic compatible,
1 MHz
Features
l C7043: for S7033 series
C7044: for S7034 series
l Area scanning or full line-binnng operation
l Readout frequency: 250 kHz
l Readout noise: 60 e-rms
l T=50 C (T changes by cooling method.)
Cat. No. KMPD1029E07
Feb. 2003 DN
Multichannel detector head C7043/C7044
I Precaution for use (Electrostatic countermeasures)
G Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with
an earth ring, in order to prevent electrostatic damage due to electrical charges from friction.
G Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.
G Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to
discharge.
G Ground the tools used to handle these sensors, such as tweezers and soldering irons.
It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the
amount of damage that occurs.
I Element cooling/heating temperature incline rate
Element cooling/heating temperature incline rate should be set at less than 5 K/min.
I Specifications of built-in temperature sensor
A chip thermistor is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A relation
between the thermistor resistance and absolute temperature is expressed by the following equation.
R1 = R2 expB (1 / T1 - 1 / T2)
where R1 is the resistance at absolute temperature T1 (K)
R2 is the resistance at absolute temperature T2 (K)
B is so-called the B constant (K)
The characteristics of the thermistor used are as follows.
R (298K) = 10 k9
B (298K / 323K) = 3450 K
KMPDB0111EA
(Typ. Ta=25 C)
10 k
220
240
260
TEMPERATURE (K)
RESIST
ANCE
280
300
100 k
1 M
8
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