Features
l Cut-off frequency (Vcc=5 V)
S6468 : 15 MHz
S6468-02: 35 MHz
S6468-05: 50 MHz
S6468-10: 100 MHz
l Low noise (f=1 MHz)
S6468 : 25 nVrms/Hz
1/2
S6468-02: 28 nVrms/Hz
1/2
S6468-05: 26 nVrms/Hz
1/2
S6468-10: 16 nVrms/Hz
1/2
l 3 pin TO-18 package
l Active area
S6468/02/05:
0.8 mm
S6468-10 :
0.4 mm
Applications
l Optical fiber communication
l Video signal transmission
l Optical disk pick-up
P H O T O D I O D E
Si PIN photodiode with preamp
High-speed sensor with preamp
S6468 series
S6468 series is a high-speed photodetector consisting of a Si PIN photodiode and a preamplifier chip integrated in the same package. They
feature high-speed response and high sensitivity over a wide spectral range from visible to near infrared light. The small package (TO-18) allows
compact optical design. The amplifier input is at a virtual ground, so external noise which may appear when detecting high-speed signals can be
suppressed.
s
Electrical and optical characteristics [Ta=25 C, Vcc=5 V, R
L
=500 , C
L
=13 pF (S6468-05/-10: C
L
=3 pF)]
*1
S6468
S6468-02
S6468-05
S6468-10
Parameter
Symbol
Condition
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
Spectral response range
320 to 1060
320 to 1000
320 to 1000
320 to 1000
nm
Peak sensitivity wavelength
p
-
900
-
-
800
-
-
800
-
-
800
-
nm
=660 nm
-
13.5
-
-
8.5
-
-
7.5
-
-
4.5
-
=780 nm
-
15.5
-
-
11
-
-
9.5
-
-
5
-
Photo sensitivity
S
=830 nm
-
16.5
-
-
11
-
-
9.5
-
-
5
-
mV/
W
Trans-impedance
R
T
-
30
-
-
20
-
-
18
-
-
10
-
k
Power supply current
Icc
R
L
=
-
-
3
-
-
3
-
-
6.5
-
-
18
mA
Output bias voltage
*2
Vo
R
L
=
Pin=0 W
0.55
0.65
0.8
0.65
0.8
0.9
1.25
1.55
1.85
1.1
1.4
1.8
V
Temperature coefficient of
output bias voltage
-
-
-2
-
-
-2
-
-
-4
-
-
-3
-
mV/
C
Cut-off frequency
fc
Pin=10 W
*3
12
15
-
28
35
-
40
50
-
80
100
-
MHz
Maximum output voltage
amplitude
-
Nonlinear
distortion:
10 % Max.
0.5
-
-
0.5
-
-
1.0
-
-
0.8
-
-
Vp-p
Output impedance
Zo
f=5 Hz
-
30
-
-
30
-
-
17
-
-
17
-
Output noise voltage
Vn
Pin=0 W
f=1 MHz
-
25
-
-
28
-
-
26
-
-
16
-
nV/Hz
1/2
Overshoot
-
Pin=10 W
*3
-
-
10
-
-
10
-
-
10
-
-
10
%
s
Absolute maximum ratings
Parameter
Symbol Min.
Max.
Unit
Power supply voltage
*4
Vcc
-0.5
7
V
Power dissipation
P
-
300
mW
Operating temperature
Topr
-20
70
C
Storage temperature
Tstg
-40
100
C
*1: For definitions of R
L
and C
L
, refer to the basic connection.
*2: Output voltage Vout =Vo-(Pin S) Pin: incident radiant flux (W)
*3: Peak value
*4: A bypass capacitor (0.01 F to 0.1 F ceramic) is connected between the Vcc lead and the GND lead.
The lead length should be less than 20 mm (S6468/-02) or 5 mm (S6468-05/-10).
s
Recommended operating conditions
S6468/-02
S6468-05/-10
Parameter
Symbol
Min.
Typ. Max. Min.
Typ. Max. Unit
Power supply voltage
Vcc
4.75
5
5.25
4.75
5
5.25
V
Load resistance
R
L
500
-
-
500
-
-
Load capacitance
C
L
-
-
13
-
-
3
pF
Operating temperature
Topr
0
-
60
0
-
60
C
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
Si PIN photodiode with preamp
S6468 series
Cat. No. KPIN1026E03
Apr. 2001 DN
s Spectral response
-30
0.1
1
100
10
1000
-10
-20
[Typ. Ta=25 C, R
L
=500
, C
L
=13 pF (S6468-05/-10: 3 pF), V
CC
=5 V]
0
-3
10
RELATIVE SENSITIVITY (dB)
FREQUENCY (MHz)
S6468-10
S6468
S6468-02
S6468-05
Vcc
GND
Vsignal
R
L
C
L
C
B
Vcc
s Frequency characteristics
s Output noise spectrum
s Dimensional outline (unit: mm)
s Basic connection
KPINA0001EF
KPINC0001EA
Note) R
L
and C
L
are total resistive load and capacitive load viewed from the V signal
terminal. When connecting a cable or circuit to the latter stage of the basic connection
diagram, the cable or circuit resistance and capacitance should also be taken into
account. They should be used in accordance with the recommended operating
conditions: R
L
500 and C
L
13 pF (S6468-05/-10: C
L
3 pF).
A bypass capacitor (C
B
=0.01 F to 0.1 F ceramic) is connected between the Vcc
lead and the GND lead.
The lead length should be less than 20 mm (S6468/-02) and 5 mm (S6468-05/-10).
13.5
3.6
0.2
2.8
PHOTOSENSITIVE
SURFACE
2.54 0.2
0.45
LEAD
Vcc
GND (CASE)
V signal
5.4 0.2
4.7 0.1
WINDOW
3.0 0.1
KPINB0126EA
200
WAVELENGTH (nm)
PHOTO SENSITIVITY (mV/
W)
400
600
800
1000
1200
(Typ.Ta=25 C)
0
2
4
6
8
10
12
14
16
18
20
S6468
S6468-10
S6468-05
S6468-02
KPINB0163EA
0
0.1
1
10
FREQUENCY (MHz)
OUTPUT NOISE DENSITY (nV/Hz
1/2
)
100
1000
[Typ.Ta=25 C, R
L
=500
, C
L
=13 pF (S6468-05/-10: 3 pF), Vcc=5 V]
10
20
30
40
50
60
70
80
90
100
S6468
S6468-05
S6468-02
S6468-10
KPINB0164EA
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