Features
l Quadrant (2 2) element format
l Low cross-talk: 2 % Max.
l Wide spectral response range: 190 to 1000 nm
l High-speed response: fc=20 MHz
l TO-5 metal package
Applications
l Laser beam axis alignment
l Position sensing
P H O T O D I O D E
Si PIN photodiode
Quadrant Si PIN photodiode
S4349
S4349 is a quadrant Si PIN photodiode having sensitivity in the UV to near IR spectral range. A quadrant element format allows position sensing
such as for laser beam axis alignment.
s
General ratings
Parameter
Symbol
Value
Unit
Window material
-
Quartz glass
-
Active area
A
o3.0/4 element
mm
Element gap
-
100
m
s
Absolute maximum ratings
Parameter
Symbol
Value
Unit
Reverse voltage
V
R
Max.
20V
Operating temperature
Topr
-20 to +60
C
Storage temperature
Tstg
-55 to +80C
s
Electrical and optical characteristics (Ta=25 C, per 1 element)
Parameter
Symbol
Condition
Typ.
Max.
Unit
Spectral response range
190 to 1000
-
nm
Peak sensitivity wavelength
p
720
-
nm
Photo sensitivity
S
=p
0.45
-
A/W
Dark current
I
D
V
R
=5 V
0.01
0.2
nA
Temperature coefficient of I
D
T
CID
1.12
-
times/C
Cut-off frequency
fc
V
R
=5 V, R
L
=50
=780 nm, -3 dB
20
-
MHz
Terminal capacitance
Ct
V
R
=5 V, f=1 MHz
25
-
pF
Noise equivalent power
NEP
V
R
=5 V
4.0 10
-15
-
W/Hz
1/2
Cross-talk
C
L
V
R
=5 V, =780 nm
-
2
%
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
Si PIN photodiode
S4349
Cat. No. KMPD1007E02
Mar. 2001 DN
0.5
0.4
0.3
0.2
0
190
400
600
800
1000
WAVELENGTH (nm)
PHOTO SENSITIVITY
(A/W)
0.6
0.7
0.8
(Typ. Ta=25 C)
0.1
s
Spectral response
KMPDB0126EA
0
190
400
600
800
1000
+1.0
+0.5
(Typ.)
+1.5
-0.5
WAVELENGTH (nm)
TEMPERATURE COEFFICIENT
(%/
C)
KMPDB0127EA
s
Photo sensitivity temperature characteristic
s
Dimensional outline (unit: mm)
KMPDA0114EA
REVERSE VOLTAGE (V)
DARK CURRENT
100 pA
1 nA
10 pA
1 pA
100 fA
10 fA
0.01
0.1
1
10
100
(Typ. Ta=25 C)
s
Dark current vs. reverse voltage
KMPDB0128EA
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE
(Typ. Ta=25 C, f=1 MHz)
1 nF
10 pF
1 pF
100 fF
0.1
1
10
100
100 pF
KMPDB0129EA
s
Terminal capacitance vs. reverse voltage
13.5
ACTIVE AREA
DETAILS OF
PHOTODIODE
PHOTOSENSITIVE
SURFACE
WINDOW
5.9 0.1
8.1 0.2
9.2 0.2
2.95
4.1 0.2
a
b
c
d
0.1
0.45
LEAD
0.1
5.08 0.2
ANODE d
ANODE a
CATHODE (CASE)
ANODE b
ANODE c
CATHODE (CASE)
NC
3.0
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