S3759 is a Si PIN photodiode developed to detect and measure infrared energy emitted from YAG lasers (1.06 m). Compared to standard Si
photodiodes, S3759 delivers exceptionally high sensitivity of 0.38 A/W at 1.06 m. The PIN structure allows high-speed response and low
capacitance. The active area is as large as
5 mm, making optical axis alignment easier.
P H O T O D I O D E
Si PIN photodiode
Si PIN photodiode for visible to infrared photometry
S3759
Features
Applications
l High sensitivity in infrared region: 0.38 A/W (=1.06 m)
l High-speed response: tr=12.5 ns (V
R
=100 V)
l Low capacitance: Ct=10 pF (V
R
=100 V)
l Large active area: 5 mm
l High reliability: TO-8 metal package
l YAG laser detection
l Analytical equipment, etc
1
I Absolute maximum ratings
Parameter
Symbol
Value
Unit
Maximum reverse voltage
V
R
Max.
150
V
Operating temperature
Topr
-40 to +100
C
Storage temperature
Tstg
-55 to +125
C
I Electrical and optical characteristics (Ta=25 C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Spectral response range
l
-
360 to 1120
-
nm
Peak sensitivity wavelength
lp
-
980
-
nm
Photo sensitivity
S
l=1060 nm
0.3
0.38
-
A/W
Short circuit current
Isc
2856 K, 1000 lx
14
19
-
A
Dark current
I
D
V
R
=100 V
-
1
10
nA
Rise time
tr
l=1060 nm, V
R
=100 V, R
L
=50 W
-
12.5
-
ns
Terminal capacitance
Ct
V
R
=100 V, f=1 MHz
-
10
-
pF
Si PIN photodiode
S3759
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2002 Hamamatsu Photonics K.K.
Cat. No. KPIN1066E01
Oct. 2002 DN
2
Chip position accuracy with
respect to the cap center
X, Y
0.4
(2.8)
(15)
5.0 0.2
INDEX MARK
1.4
PHOTOSENSITIVE SURFACE
0.5 MAX.
13.9 0.2
12.35 0.1
10.5 0.1
7.5 0.2
1.0 MAX.
ACTIVE AREA
5.0
0.45
LEAD
CASE
I Spectral response
I Dimensional outline (unit: mm)
KPINA0092EA
0.4
0.8
0.6
0
0.2
0.5
0.7
0.1
0.3
PHOTO SENSITIVITY (A/W)
WAVELENGTH (nm)
200
400
600
800
1000
1200
(Typ. Ta=25 C)
KPINB0279EA
I Response waveform
50 %
100 %
[
=1060 nm (YAG laser), V
R
=100 V, R
L
=50
]
12.5 ns
KPINB0280EA
I Dark current vs. reverse voltage
10 nA
10 pA
1 nA
100 pA
DARK CURRENT
REVERSE VOLTAGE (V)
0.01
0.1
1
10
100
(Typ. Ta=25 C)
KPINB0281EA
I Terminal capacitance vs. reverse voltage
1 nF
1 pF
100 pF
10 pF
TERMINAL CAPACITANCE
REVERSE VOLTAGE (V)
0.1
1
10
100
(Typ. Ta=25 C)
KPINB0282EA
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