Rev: 1.04a 10/2002
1/14
2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS71108ATP/J/SJ/U
128K x 8
1Mb Asynchronous SRAM
7, 8, 10, 12 ns
3.3 V V
DD
Center V
DD
and V
SS
SOJ, TSOP, FP-BGA
Commercial Temp
Industrial Temp
Features
Fast access time: 7, 8, 10, 12 ns
CMOS low power operation: 140/120/95/80 mA at minimum
cycle time
Single 3.3 V power supply
All inputs and outputs are TTL-compatible
Fully static operation
Industrial Temperature Option: 40 to 85C
Package line up
J: 400 mil, 32-pin SOJ package
TP: 400 mil, 32-pin TSOP Type II package
SJ: 300 mil, 32-pin SOJ package
U: 6 mm x 8 mm Fine Pitch Ball Grid Array package
Description
The GS71108A is a high speed CMOS Static RAM organized
as 131,072 words by 8 bits. Static design eliminates the need
for external clocks or timing strobes. The GS operates on a
single 3.3 V power supply and all inputs and outputs are TTL-
compatible. The GS71108A is available in a 6 mm x 8 mm
Fine Pitch BGA package, as well as in 300 mil and 400 mil
SOJ and 400 mil TSOP Type-II packages.
Pin Descriptions
SOJ & TSOP-II 128K x 8-Pin Configuration
Packages J, TP, and SJ
Fine Pitch BGA 128K x 8-Bump Configuration
Package U
6 mm x 8 mm, 0.75 mm Bump Pitch
Top View
Symbol
Description
A
0
A
16
Address input
DQ
1
DQ
8
Data input/output
CE
Chip enable input
WE
Write enable input
OE
Output enable input
V
DD
+3.3 V power supply
V
SS
Ground
NC
No connect
1
2
3
4
5
6
A
NC
OE
A
2
A
6
A
7
NC
B
DQ
1
NC
A
1
A
5
CE
DQ
8
C
DQ
2
NC
A
0
A
4
NC
DQ
7
D
V
SS
NC
NC
A
3
NC
V
DD
E
V
DD
NC
NC
NC
NC
V
SS
F
DQ
3
NC
A
14
A
11
DQ
5
DQ
6
G
DQ
4
NC
A
15
A
12
WE
A
8
H
NC
A
10
A
16
A
13
A
9
NC
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A
3
A
2
A
1
A
0
CE
DQ
1
DQ
2
V
DD
V
SS
DQ
3
DQ
4
WE
A
16
A
15
A
14
A
13
A
4
A5
A6
A
7
OE
DQ
8
DQ
7
V
SS
V
DD
DQ6
DQ
5
A
8
A
9
A
10
A
11
A
12
32-pin
400 mil SOJ
300 mil SOJ
&
&
400 mil TSOP II
Rev: 1.04a 10/2002
2/14
2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS71108ATP/J/SJ/U
Note: X: "H" or "L"
Truth Table
CE
OE
WE
DQ
1
to DQ
8
V
DD
Current
H
X
X
Not Selected
ISB
1
, ISB
2
L
L
H
Read
I
DD
L
X
L
Write
L
H
H
High Z
Memory Array
Row
Decoder
Column
Decoder
Address
Input
Buffer
Control
I/O Buffer
A
0
CE
WE
OE
DQ
1
A
16
Block Diagram
DQ
8
Rev: 1.04a 10/2002
3/14
2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS71108ATP/J/SJ/U
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Rec-
ommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device
reliability.
Notes:
1. Input overshoot voltage should be less than V
DD
+2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than 2 V and not exceed 20 ns.
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
V
DD
0.5 to +4.6
V
Input Voltage
V
IN
0.5 to V
DD
+0.5
(
4.6 V max.)
V
Output Voltage
V
OUT
0.5 to V
DD
+0.5
(
4.6 V max.)
V
Allowable power dissipation
PD
0.7
W
Storage temperature
T
STG
55 to 150
o
C
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage for -7/-8/-10/-12
V
DD
3.0
3.3
3.6
V
Input High Voltage
V
IH
2.0
--
V
DD
+0.3
V
Input Low Voltage
V
IL
0.3
--
0.8
V
Ambient Temperature,
Commercial Range
T
Ac
0
--
70
o
C
Ambient Temperature,
Industrial Range
T
A
I
40
--
85
o
C
Rev: 1.04a 10/2002
4/14
2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS71108ATP/J/SJ/U
Notes:
1. Tested at T
A
= 25C, f = 1 MHz
2. These parameters are sampled and are not 100% tested.
Capacitance
Parameter
Symbol
Test Condition
Max
Unit
Input Capacitance
C
IN
V
IN
= 0 V
5
pF
Output Capacitance
C
OUT
V
OUT
= 0 V
7
pF
DC I/O Pin Characteristics
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage
Current
I
IL
V
IN
= 0 to V
DD
1 uA
1 uA
Output Leakage
Current
I
LO
Output High Z
V
OUT
= 0 to V
DD
1 uA
1 uA
Output High Voltage
V
OH
I
OH
= 4 mA
2.4
--
Output Low Voltage
V
OL
I
LO
= +4 mA
--
0.4 V
Power Supply Currents
Parameter
Symbol
Test Conditions
0 to 70C
40 to 85C
7 ns
8 ns
10 ns
12 ns
7 ns
8 ns
10 ns
12 ns
Operating
Supply
Current
I
DD
CE
V
IL
All other inputs
V
IH
or
V
IL
Min. cycle time
I
OUT
= 0 mA
140 mA 120 mA 95 mA
80 mA
145 mA 125 mA 100 mA 85 mA
Standby
Current
I
SB1
CE
V
IH
All other inputs
V
IH
or
V
IL
Min. cycle time
25 mA
20 mA
20 mA
15 mA
30 mA
25 mA
25 mA
20 mA
Standby
Current
I
SB2
CE
V
DD
0.2 V
All other inputs
V
DD
0.2 V or
0.2 V
2 mA
5 mA
Rev: 1.04a 10/2002
5/14
2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS71108ATP/J/SJ/U
AC Test Conditions
AC Characteristics
* These parameters are sampled and are not 100% tested
Read Cycle
Parameter
Symbol
-7
-8
-10
-12
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Read cycle time
t
RC
7
--
8
--
10
--
12
--
ns
Address access time
t
AA
--
7
--
8
--
10
--
12
ns
Chip enable access time (CE)
t
AC
--
7
--
8
--
10
--
12
ns
Output enable to output valid (OE)
t
OE
--
3
--
3.5
--
4
--
5
ns
Output hold from address change
t
OH
3
--
3
--
3
--
3
--
ns
Chip enable to output in low Z (CE)
t
LZ
*
3
--
3
--
3
--
3
--
ns
Output enable to output in low Z (OE)
t
OLZ
*
0
--
0
--
0
--
0
--
ns
Chip disable to output in High Z (CE)
t
HZ
*
--
3.5
--
4
--
5
--
6
ns
Output disable to output in High Z (OE)
t
OHZ
*
--
3
--
3.5
--
4
--
5
ns
DQ
VT = 1.4 V
50
30pF
1
DQ
3.3 V
Output Load 1
Output Load 2
589
434
5pF
1
Note:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted.
3. Output load 2 for t
LZ
, t
HZ
, t
OLZ
and t
OHZ
Parameter
Conditions
Input high level
V
IH
= 2.4 V
Input low level
V
IL
= 0.4 V
Input rise time
tr = 1 V/ns
Input fall time
tf = 1 V/ns
Input reference level
1.4 V
Output reference level
1.4 V
Output load
Fig. 1& 2
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