GPTS3390
PHASE CONTROLLED SCR
High reliability operation
Traction and industrial application
VOLTAGE UP TO
2800 V
AVERAGE CURRENT
3900 A
SURGE CURRENT
60 kA
BLOCKING CHARACTERISTICS
Characteristic
Conditions
V
RRM
Repetitive peak reverse voltage
2800 V
V
RSM
Non-repetitive peak reverse voltage
3000 V
V
DRM
Repetitive peak off-state voltage
2800 V
I
DRM
Repetitive peak off-state current, max.
V
DRM
, single phase, half wave, Tj = Tjmax
400 mA
I
RRM
Repetitive peak reverse current, max.
V
RRM
, single phase, half wave, Tj = Tjmax
400 mA
ON-STATE CHARACTERISTICS
I
T(AV)
Average on-state current
Sine wave,180 conduction, Th = 55 C
3900 A
I
T(RMS)
R.M.S. on-state current
Sine wave,180 conduction, Th = 55 C
6126 A
I
TSM
Surge on-state current
Non rep. half sine wave, 50 Hz, V
R
= 0 V, T
j
= T
jmax
60 kA
It
I t for fusing coordination
18000 kAs
V
T(TO)
Threshold voltage
T
j
= T
jmax
0.95 V
r
T
On-state slope resistance
T
j
= T
jmax
0.100 m
V
TM
Peak on-state voltage, max
On-state current I
T
= 3000 A , Tj = Tjmax
1.23 V
I
H
Holding current, max
T
j
= 25 C
100 mA
I
L
Latching current, typ
T
j
= 25 C
400 mA
TRIGGERING CHARACTERISTICS
V
GT
Gate trigger voltage
T
j
= 25 C, V
D
= 5 V
2.6 V
I
GT
Gate trigger current
T
j
= 25 C, V
D
= 5 V
400 mA
V
GD
Non-trigger voltage
V
D
= 67% V
RRM
, T
j
= T
jmax
0.3 V
P
GM
Peak gate power dissipation
Pulse width 0.1 ms
75 W
P
G(AV)
Average gate power dissipation
3 W
I
FGM
Peak gate current
10 A
V
FGM
Peak gate voltage (forward)
12 V
V
RGM
Peak gate voltage (reverse)
10 V
SWITCHING CHARACTERISTICS
di/dt
Critical rate of rise of on-state current
Repetitive, T
j
= T
jmax
250 A/s
dV/dt
Critical rate of rise of off-state voltage
T
j
= T
jmax
1000 V/s
t
q
Turn-off time, max
T
j
= T
jmax
, I
T
= 4500 A, di/dt = -5 A/s
400 s
VR = 200 V, VD = 67% VDRM, dV/dt = 20 V/s
THERMAL AND MECHANICAL CHARACTERISTICS
R
th(j-c)
Thermal resistance (junction to case)
Double side cooled
0.007 C/W
R
th(c-h)
Thermal resistance (case to heatsink)
Double side cooled
0.002 C/W
T
jmax
Max operating junction temperature
125 C
T
stg
Storage temperature
-40 / 125 C
F
Clamping force 10%
70 kN
Mass
1450 g
Document GPTS3390T001
Value
Green Power Solutions srl
Via Greto di Cornigliano 6R - 16152 Genova , Italy
Phone: +39-010-659 1869
Fax: +39-010-659 1870
Web: www.gpsemi.it
E-mail: info@gpsemi.it
Green Power
Semiconductors