FEATURES
Silicon Planar Zener Diodes
The Zener voltages are graded according to
the international E 12 standard. Smaller voltage
tolerances and other Zener voltages are available
upon request.
These diodes are also available in the Mini-MELF case
with the type designation ZMM1 ... ZMM75.
MECHANICAL DATA
Case: DO-35 Glass Case
Weight: approx. 0.13 g
MAXIMUM RATINGS
Ratings at 25C ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNIT
Zener Current (see Table "Characteristics")
Power Dissipation at T
amb
= 25C
P
tot
500
(1)
mW
Junction Temperature
T
j
175
C
Storage Temperature Range
T
S
55 to +175
C
NOTES:
(1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
ZPD1 THRU ZPD75
ZENER DIODES
mi
n. 1.083 (
27.5)
mi
n. 1.083
(
2
7
.
5)
max
. .
150 (
3.8)
max.
Cathode
.020 (0.52)
Mark
max.
.079 (2.0)
DO-35
Dimensions are in inches and (millimeters)
1/20/99
SYMBOL
MIN.
TYP.
MAX.
UNIT
Thermal Resistance
R
thJA
0.3
(1)
C/W
Junction to Ambient Air
NOTES:
(1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature.
ZPD1 THRU ZPD75
ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified.
Type
Zener Voltage
(1)
at
I
Z
= 5 mA
V
Z
(V)
at
I
Z
= 5 mA
f = 1 kHz
r
zj
(
)
at
I
Z
= 1 mA
f = 1 kHz
r
zj
(
)
Temp. Coeff.
of Zener Voltage
at
I
Z
= 5 mA
vz
(10
4
/K)
Reverse
Voltage
at
I
R
= 100 nA
V
R
(V)
at
T
amb
= 45C
I
Z
(mA)
at
T
amb
= 25C
I
Z
(mA)
Dynamic Resistance
Admissible
Zener current
(2)
ZPD1
(3)
0.7 ... 0.8
6.5 (< 8)
< 50
26 ... 23
280
340
ZPD2.7
2.5 ... 2.9
75 (< 83)
< 500
9 ... 4
135
160
ZPD3
2.8 ... 3.2
80 (< 95)
< 500
9 ... 3
117
140
ZPD3.3
3.1 ... 3.5
80 (< 95)
< 500
8 ... 3
109
130
ZPD3.6
3.4 ... 3.8
80 (< 95)
< 500
8 ... 3
101
120
ZPD3.9
3.7 ... 4.1
80 (< 95)
< 500
7 ... 3
92
110
ZPD4.3
4.0 ... 4.6
80 (< 95)
< 500
6 ... 1
85
100
ZPD4.7
4.4 ... 5.0
70 (< 78)
< 500
5 ... +2
76
90
ZPD5.1
4.8 ... 5.4
30 (< 60)
< 480
3 ... +4
> 0.8
67
80
ZPD5.6
5.2 ... 6.0
10 (< 40)
< 400
2 ... +6
> 1
59
70
ZPD6.2
5.8 ... 6.6
4.8 (< 10)
< 200
1 ... +7
> 2
54
64
ZPD6.8
6.4 ... 7.2
4.5 (< 8)
< 150
+2 ... +7
> 3
49
58
ZPD7.5
7.0 ... 7.9
4 (< 7)
< 50
+3 ... +7
> 5
44
53
ZPD8.2
7.7 ... 8.7
4.5 (< 7)
< 50
+4 ... +7
> 6
40
47
ZPD9.1
8.5 ... 9.6
4.8 (< 10)
< 50
+5 ... +8
> 7
36
43
ZPD10
9.4 ... 10.6
5.2 (< 15)
< 70
+5 ... +8
> 7.5
33
40
ZPD11
10.4 ... 11.6
6 (< 20)
< 70
+5 ... +9
> 8.5
30
36
ZPD12
11.4 ... 12.7
7 (< 20)
< 90
+6 ... +9
> 9
28
32
ZPD13
12.4 ... 14.1
9 (< 25)
< 110
+7 ... +9
> 10
25
29
ZPD15
13.8 ... 15.6
11 (< 30)
< 110
+7 ... +9
> 11
23
27
ZPD16
15.3 ... 17.1
13 (< 40)
< 170
+8 ... +9.5
> 12
20
24
ZPD18
16.8 ... 19.1
18 (< 50)
< 170
+8 ... +9.5
> 14
18
21
ZPD20
18.8 ... 21.2
20 (< 50)
< 220
+8 ... +10
> 15
17
20
ZPD22
20.8 ... 23.3
25 (< 55)
< 220
+8 ... +10
> 17
16
18
ZPD24
22.8 ... 25.6
28 (< 80)
< 220
+8 ... +10
> 18
13
16
ZPD27
25.1 ... 28.9
30 (< 80)
< 250
+8 ... +10
> 20
12
14
ZPD30
28 ... 32
35 (< 80)
< 250
+8 ... +10
> 22.5
10
13
ZPD33
31 ... 35
40 (< 80)
< 250
+8 ... +10
> 25
9
12
ZPD36
34 ... 38
40 (< 90)
< 250
+8 ... +10
> 27
9
11
ZPD39
37 ... 41
50 (< 90)
< 300
+10 ... +12
> 29
8
10
ZPD43
40 ... 46
60 (< 100)
< 700
+10 ... +12
> 32
7
9.2
ZPD47
44 ... 50
70 (< 100)
< 750
+10 ... +12
> 35
6
8.5
ZPD51
48 ... 54
70 (< 100)
< 750
+10 ... +12
> 38
6
7.8
ZPD56
52.0 ... 60.0
(4)
< 135
(4)
< 1000
(5)
typ. +10
(4)
ZPD62
58.0 ... 66.0
(4)
< 150
(4)
< 1000
(5)
typ. +10
(4)
ZPD68
64.0 ... 72.0
(4)
< 200
(4)
< 1000
(5)
typ. +10
(4)
ZPD75
70.0 ... 79.0
(4)
< 250
(4)
< 1500
(5)
typ. +10
(4)
NOTES:
(1) Tested with pulses t
p
= 5 ms
(2) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
(3) The ZPD1 is a silicon diode operated in forward direction. Hence, the subscript of all parameters should be "F" instead of "Z".
Connect the cathode terminal to the negative pole
(4) at I
Z
= 2.5 mA
(5) at I
Z
= 0.5 mA