UG06A thru UG06D
Vishay Semiconductors
formerly General Semiconductor
Document Number 88757
www.vishay.com
14-Feb-02
1
Miniature Ultrafast Plastic Rectifier
1.0 (25.4)
MIN.
1.0 (25.4)
MIN.
0.125 (3.18)
0.115 (2.92)
0.100 (2.54)
0.090 (2.29)
0.025 (0.635)
0.023 (0.584)
DIA
DIA.
MPG06
Maximum Ratings & Thermal Characteristics
Ratings at 25C ambient temperature unless otherwise specified.
Parameters
Symbols
UG06A
UG06B
UG06C
UG06D
Units
Maximum repetitive peak reverse voltage
V
RRM
50
100
150
200
V
Maximum RMS voltage
V
RMS
35
70
105
140
V
Maximum DC blocking voltage
V
DC
50
100
150
200
V
Maximum average forward rectified current at 0.375"
I
F(AV)
0.6
A
(9.5mm) lead length at T
L
= 75C
Peak forward surge current 8.3 ms single half sine-wave
I
FSM
40
A
superimposed on rated load (JEDEC Method) at T
L
= 75C
Typical thermal resistance
(1)
R
JA
97
C/W
R
JL
28
Operating junction and storage temperature range
T
J
, T
STG
-55 to +150C
C
Electrical Characteristics
Ratings at 25C ambient temperature unless otherwise specified.
Parameters
Symbols
UG06A
UG06B
UG06C
UG06D
Units
Maximum instantaneous forward voltage at 0.6A
V
F
0.95
V
Maximum DC reverse current
T
A
= 25C
I
R
5.0
A
at rated DC blocking voltage
T
A
=100C
100
Maximum reverse recovery time at I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
t
rr
15
ns
Maximum reverse recovery time
T
J
= 25C
t
rr
25
ns
I
F
=0.6A, V
R
=30V, di/dt=50A/
s, I
rr
=10% I
RM
T
J
= 100C
35
Maximum recovered stored charge
T
J
= 25C
Q
rr
8.0
nC
I
F
=0.6A, V
R
=30V, di/dt=50A/
s, I
rr
=10% I
RM
T
J
= 100C
20
Typical junction capacitance at 4V, 1MHz
C
J
9.0
pF
Notes: (1) Thermal resistance from junction to ambient and junction to lead at 0.375" (9.5mm) lead length
P.C.B. mounted with 0.2 x 0.2" (5.0 x 5.0mm) copper pads
(2) Pulse test: 300
s pulse width, 1% duty cycle
Dimensions in inches and (millimeters)
Features
Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
Ideally suited for use in very high frequency switching
power supplies, inverters and as free wheeling diodes
Ultrafast recovery time for high efficiency
Excellent high temperature switching
Soft recovery characteristics
Glass passivated junction
High temperature soldering guaranteed:
250C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
Mechanical Data
Case: Void free molded plastic body over glass
passivated chip
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.0064 oz., 0.181 g
Reverse Voltage 50 to 200V
Forward Current 0.6A
UG06A thru UG06D
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88757
2
14-Feb-02
Ratings and
Characteristic Curves
(T
A
= 25C unless otherwise noted)
Temperature (
C)
Fig. 1 -- Maximum Forward Current
Derating Curves
A
verage Forward Rectified Current (A)
Fig. 3 -- Typical Instantaneous
Forward Characteristics
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (
A)
Fig. 4 -- Typical Reverse Leakage
Characteristics
Fig. 6 -- Typical Junction Capacitance
Number of Cycles at 60 H
Z
Reverse Voltage (V)
Fig. 2 -- Maximum Non-Repetitive
Peak Forward Surge Current
Peak Forward Surge Current (A)
Junction Temperature (
C)
Recovered Charge / Reverse Recovery
T
ime, nC/ns
Junction Capacitance, pF
Fig. 5 -- Reverse Switching
Characteristics
0
25
50
75
100
125
150
175
0
0.15
0.3
0.45
0.6
0.75
0.9
Resistive or Inductive Load
0.375" (9.5mm) Lead Length
T
L
Lead Temperature
T
A
, Ambient Temperature
P.C.B. Mounted
0.2" x 0.2" (5 x 5mm)
Copper Pads
1
10
100
1
10
100
T
J
= 75
C
8.3ms Single Half Sine-Wave
(JEDEC Method)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01
0.1
1
10
100
T
J
= 100
C
T
J
= 25
C
Pulse Width = 300
s
1% Duty Cycle
0
20
40
60
80
100
0.01
0.1
1
10
100
1,000
0
25
50
75
100
125
150
175
0
10
20
30
40
50
60
I
F
= 0.6A
V
R
=30V
t
rr
Q
rr
di/dt=20A/
s
di/dt=150A/
s
di/dt=100A/
s
di/dt=50A/
s
di/dt=150A/
s
di/dt=100A/
s
di/dt=20A/
s
di/dt=50A/
s
0.1
1
10
100
1
10
100
T
J
= 25
C
f = 1.0MH
Z
Vsig = 50mVp-p
T
J
= 100
C
T
J
= 25
C
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