GFP65N02
N-Channel Enhancement-Mode MOSFET
V
DS
20V R
DS(ON)
8.5
m
I
D
65A
10/8/01
New Product
T
RENCH
G
EN
F
ET
Features
Advanced Trench Process Technology
High Density Cell Design for Ultra Low
On-Resistance
Specially Designed for Low Voltage DC/DC
Converters
Fast Switching for High Efficiency
Mechanical Data
Case: JEDEC TO-220AB molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250C/10 seconds at terminals
Mounting Torque: 10 in-lbs maximum
Weight: 2.0g
0.154 (3.91)
0.142 (3.60)
Dia.
0.560 (14.22)
0.530 (13.46)
G
D
S
1.148 (29.16)
1.118 (28.40)
0.022 (0.56)
0.014 (0.36)
0.113 (2.87)
0.102 (2.56)
0.205 (5.20)
0.190 (4.83)
0.360 (9.14)
0.330 (8.38)
PIN
0.415 (10.54)
Max.
0.105 (2.67)
0.095 (2.41)
D
0.155 (3.93)
0.134 (3.40)
0.635 (16.13)
0.580 (14.73)
0.410 (10.41)
0.350 (8.89)
0.160 (4.06)
0.09 (2.28)
0.037 (0.94)
0.026 (0.66)
0.603 (15.32)
0.573 (14.55)
0.185 (4.70)
0.170 (4.31)
0.055 (1.39)
0.045 (1.14)
0.104 (2.64)
0.094 (2.39)
*
May be notched or flat
*
TO-220AB
G
D
S
Dimensions in inches
and (millimeters)
Maximum Ratings and Thermal Characteristics
(T
C
= 25C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
T
C
= 25C
I
D
65
T
J
= 150C
T
C
= 100C
41
A
Pulsed Drain Current
(1)
I
DM
150
Power Dissipation
T
C
= 25C
57
T
J
= 150C
T
C
= 100C
P
D
23
W
T
A
= 25C
2
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
Junction-to-Case Thermal Resistance
R
JC
2.2
C/W
Junction-to-Ambient Thermal Resistance
R
JA
62.5
C/W
Notes: (1) Pulse width limited by maximum junction temperature
GFP65N02
N-Channel Enhancement-Mode MOSFET
Electrical Characteristics
(T
J
= 25C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
A
20
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
0.8
2.5
Gate-Body Leakage
I
GSS
V
DS
= 0V, V
GS
= 20V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 16V, V
GS
= 0V
1
A
V
DS
=16V, V
GS
=0V, T
J
=125C
10
On-State Drain Current
(1)
I
D(on)
V
DS
5V, V
GS
= 10V
65
A
Drain-Source On-State Resistance
(1)
R
DS(on)
V
GS
= 10V, I
D
= 32A
6.5
8.5
m
V
GS
= 4.5V, I
D
= 25A
10.5
13.5
Forward Transconductance
(1)
g
fs
V
DS
= 10V, I
D
= 32A
40
S
Dynamic
Total Gate Charge
(1)
Q
g
V
DS
=10V, V
GS
=4.5V, I
D
=32A
19.5
30
38
60
Gate-Source Charge
(1)
Q
gs
V
DS
= 10V, V
GS
= 10V
6.5
nC
Gate-Drain Charge
(1)
Q
gd
I
D
= 32A
8.5
Turn-On Delay Time
(1)
t
d(on)
12
20
Rise Time
(1)
t
r
V
DD
= 10V, I
D
= 1A
11
20
ns
Turn-Off Delay Time
(1)
t
d(off)
V
GEN
= 10V
53
80
Fall Time
(1)
t
f
R
G
= 6
21
40
Input Capacitance
C
iss
V
DS
= 10V, V
GS
= 0V
1920
Output Capacitance
C
oss
f = 1.0MH
Z
568
pF
Reverse Transfer Capacitance
C
rss
369
Source-Drain Diode
Max. Diode Forward Current
I
S
45
A
Max. Pulsed Diode Forward Current
(2)
I
SM
150
A
Diode Forward Voltage
(1)
V
SD
I
S
= 25A, V
GS
= 0V
0.9
1.3
V
Reverse Recovery Time
(1)
t
rr
60
ns
Peak Reverse Recovery Current
(1)
I
RRM
I
F
= 40A, di/dt = 100A/
s
1.15
A
Reverse Recovery Charge
(1)
Q
rr
37
nC
Note: (1) Pulse test; pulse width
300
s, duty cycle
2%
(2) Pulse width limited by maximum junction temperature
G
D
S
V
IN
V
GEN
R
G
R
D
V
OUT
DUT
Input, V
IN
t
d(on)
Output, V
OUT
t
on
t
r
t
d(off)
t
off
t
f
INVERTED
90%
10%
10%
90 %
50%
50%
10%
90%
PULSE WIDTH
Switching
Test Circuit
Switching
Waveforms
GFP65N02
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves
(T
A
= 25C unless otherwise noted)
0
20
40
80
0
1
2
3
4
5
Fig. 1 Output Characteristics
I
D
-
-
Drain-to-Source Current (A)
V
DS
-- Drain-to-Source Voltage (V)
0
0.01
0.015
0.005
0.02
0
20
40
60
80
Fig. 4 On-Resistance
vs. Drain Current
R
DS(ON)
-
-
On-Resistance (
)
I
D
-- Drain Current (A)
0
10
20
40
30
50
60
70
1
2
3
4
5
Fig. 2 Transfer Characteristics
I
D
-
-
Drain Current (A)
60
2.5V
1.2
1.4
1.6
0.8
1
--50
--25
25
50
75
100
125
150
0
R
DS(ON)
-
-
On-Resistance
(Normalized)
T
J
-- Junction Temperature (
C)
Fig. 5 On-Resistance
vs. Junction Temperature
V
GS
= 10V
I
D
= 32A
T
J
= 125
C
--55
C
3.0V
4.0V
3.5V
25
C
V
DS
= 10V
V
GS
= 4.5V
V
GS
= 10.0V
V
GS
-- Gate-to-Source Voltage (V)
0.8
0.9
0.6
0.7
0.5
1
1.1
1.2
--50
--25
25
50
75
100
125
150
0
V
GS(th)
-
-
Gate-to-Source
Threshold V
oltage (V)
(Normalized)
T
J
-- Junction Temperature (
C)
Fig. 3 Threshold Voltage
vs. Temperature
I
D
= 250
A
V
GS
= 4.5V, 5.0V, 6.0V, 10.0 V
0
0.01
0.02
0.03
0.04
0.05
2
4
6
8
10
Fig. 6 On-Resistance
vs. Gate-to-Source Voltage
R
DS(ON)
-
-
On-Resistance (
)
V
GS
-- Gate-to-Source Voltage (V)
I
D
= 32A
T
J
= 125
C
T
J
= 25
C
GFP65N02
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves
(T
A
= 25C unless otherwise noted)
0
500
1000
1500
2000
2500
3000
0
5
10
15
20
Fig. 8 Capacitance
C
iss
C
rss
C
oss
f = 1MH
Z
V
GS
= 0V
0
2
4
6
8
10
0
10
20
30
40
Fig. 7 Gate Charge
V
DS
= 10V
I
D
= 32A
1
10
100
0.3
0.5
0.7
0.9
1.1
1.3
1.5
T
J
= 125
C
Fig. 9 Source-Drain Diode
Forward Voltage
25
C
--55
C
V
GS
= 0V
I
S
-
-
Source Current (A)
V
SD
-- Source-to-Drain Voltage (V)
Q
g
-- Charge (nC)
V
GS
-
-
Gate-to-Source V
oltage (V)
C -
-
Capacitance (pF)
V
DS
-- Drain-to-Source Voltage (V)
Fig. 12 Maximum Safe Operating Area
0.0001
0.001
0.01
0.01
0.1
0.1
1
1
10
I
D
-
-
Drain Current (A)
V
DS
-- Drain-Source Voltage (V)
Fig. 10 Thermal Impedance
R
JA
(norm)
-
-
Normalized
Thermal
Impedance
Pulse Duration (sec.)
0.001
0.0001
0.01
0.1
0
0.1
1
1
10
100
1000
10
100
200
400
600
800
1000
1
10
Fig. 11 Power vs. Pulse Duration
Power (W)
Pulse Duration (sec.)
Single Pulse
R
JC
= 2.2
C/W
T
C
= 25
C
V
GS
= 10V
Single Pulse
R
JC
= 2.2 C/W
T
C
= 25
C
R
DS
(ON)
Limit
100
s
1ms
10ms
DC
D = 0.5
0.2
0.1
t
1
t
2
P
DM
1. Duty Cycle, D = t
1
/t
2
2. R
JC
(t) = R
JC(norm)
*R
JC
3. R
JC
= 2.2
C/W
4. T
J
- T
C
= P
DM
* R
JC
(t)
0.05
100ms
0.02,
Single Pulse
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