1N4150W
SMALL SIGNAL DIODES
FEATURES
Silicon Epitaxial Planar Diode
For general purpose and switching.
This diode is also available in other
case styles including the DO-35 case with the type
designation 1N4150 and the MiniMELF case with the
type designation LL4150.
MECHANICAL DATA
Case: SOD-123 Plastic Case
Weight: approx. 0.01 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNIT
Peak Reverse Voltage
V
RM
50
V
Maximum Average Rectified Current
I
O
200
mA
Maximum Power Dissipation at T
amb
= 25C
P
tot
410
(1)
mW
Maximum Forward Voltage Drop at I
F
= 200 mA
V
F
1.0
V
Maximum Reverse Current at V
R
= 50 V
I
R
100
nA
Maximum Reverse Recovery Time at I
F
= I
R
= 10 to 200 mA, to 0.1 I
F
T
rr
4.0
ns
Maximum Junction Temperature
T
j
150
C
Storage Temperature Range
T
S
65 to +150
C
NOTES:
(1) Valid provided that electrodes are kept at ambient temperature
1/4/99
Dimensions in inches and (millimeters)
SOD-123
.022 (0.55)
m
a
x
.
.
004 (0.
1)
.
112 (2.
85)
.
152 (3.
85)
.067 (1.70)
m
a
x
.
.
053 (1.
35)
min. .010 (0.25)
Cathode Mark
m
a
x
.
.
006 (0.
15)
Top View
.
140 (3.
55)
.
100 (2.
55)
.055 (1.40)
PDF 
ZIP